BC817-25W-AU_R1_000A1
  • Share:

Panjit International Inc. BC817-25W-AU_R1_000A1

Manufacturer No:
BC817-25W-AU_R1_000A1
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-25W-AU_R1_000A1 is a bipolar junction transistor (BJT) produced by Panjit International Inc. This NPN transistor is designed for general-purpose switching and amplification applications. It is housed in the SC-70/SOT-323 package, making it suitable for surface mount technology. The transistor is part of the BC817 series, known for its high current and low voltage capabilities.

Key Specifications

Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage VCEO - - 45 V Open base; IC = 10 mA
Collector-Base Voltage VCBO - - 50 V Open emitter
Emitter-Base Voltage VEBO - - 5 V Open collector
Collector Current (DC) IC - - 500 mA -
Peak Collector Current ICM - - 1 A -
DC Current Gain hFE 160 - 400 - IC = 100 mA; VCE = 1 V
Collector-Emitter Saturation Voltage VCE(sat) - - 0.7 V IC = 500 mA; IB = 50 mA
Total Power Dissipation Ptot - - 300 mW Tamb ≤ 25 °C
Storage Temperature Tstg -65 - 150 °C -
Junction Temperature Tj - - 150 °C -

Key Features

  • Ideally suited for automatic insertion due to its small package size (SC-70/SOT-323).
  • Epitaxial planar die construction, enhancing performance and reliability.
  • High current capability up to 500 mA and low voltage operation.
  • Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.

Applications

  • General-purpose switching and amplification.
  • Automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Consumer electronics and industrial control systems where high reliability and small footprint are required).

Q & A

  1. What is the collector-emitter voltage rating of the BC817-25W-AU_R1_000A1 transistor?

    The collector-emitter voltage rating is 45 V).

  2. What is the maximum collector current for this transistor?

    The maximum collector current is 500 mA).

  3. What is the typical DC current gain (hFE) of the BC817-25W-AU_R1_000A1?

    The typical DC current gain (hFE) is between 160 to 400 at IC = 100 mA and VCE = 1 V).

  4. What is the package type of the BC817-25W-AU_R1_000A1 transistor?

    The transistor is housed in the SC-70/SOT-323 package).

  5. Is the BC817-25W-AU_R1_000A1 transistor RoHS compliant?

    Yes, the transistor is RoHS compliant, Pb-free, and halogen-free).

  6. What are the typical applications for the BC817-25W-AU_R1_000A1 transistor?

    Typical applications include general-purpose switching and amplification, automotive, and consumer electronics).

  7. What is the maximum junction temperature for this transistor?

    The maximum junction temperature is 150 °C).

  8. What is the total power dissipation rating for the BC817-25W-AU_R1_000A1 transistor?

    The total power dissipation rating is 300 mW at Tamb ≤ 25 °C).

  9. Is the BC817-25W-AU_R1_000A1 suitable for high-frequency applications?

    The transistor has a transition frequency (fT) of 100 MHz, making it suitable for high-frequency applications).

  10. What is the storage temperature range for the BC817-25W-AU_R1_000A1 transistor?

    The storage temperature range is from -65 °C to 150 °C).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
0 Remaining View Similar

In Stock

$0.22
3,398

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S00X/AA
DD26S2S00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S5000/AA
DD26S2S5000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Similar Products

Part Number BC817-25W-AU_R1_000A1 BC817-25-AU_R1_000A1
Manufacturer Panjit International Inc. Panjit International Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 300 mW 330 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-323 SOT-23

Related Product By Categories

BF820,215
BF820,215
Nexperia USA Inc.
TRANS NPN 300V 0.05A TO236AB
2N5191G
2N5191G
onsemi
TRANS NPN 60V 4A TO126
TIP30C
TIP30C
NTE Electronics, Inc
TRANS PNP 100V 1A TO220
BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
BC857CQB-QZ
BC857CQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
2N2907AE4
2N2907AE4
Microchip Technology
TRANS PNP 60V 0.6A TO18
TIP122FP
TIP122FP
STMicroelectronics
TRANS NPN DARL 100V 5A TO220FP
TIP32CTSTU
TIP32CTSTU
onsemi
TRANS PNP 100V 3A TO220-3
BC857CW/DG/B4F
BC857CW/DG/B4F
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70
TIP31ATU_F129
TIP31ATU_F129
onsemi
TRANS NPN 60V 3A TO220-3
BCX56-16 TR
BCX56-16 TR
Central Semiconductor Corp
TRANS NPN 80V 1A SOT89
BC817-25-QR
BC817-25-QR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB

Related Product By Brand

BAV70W_R1_00001
BAV70W_R1_00001
Panjit International Inc.
SOT-323, SWITCHING
MBR10100_T0_00001
MBR10100_T0_00001
Panjit International Inc.
TO-220AC, SKY
BAS16W-AU_R1_000A1
BAS16W-AU_R1_000A1
Panjit International Inc.
SOT-323, SWITCHING
BZX84C3V3TW_R1_00001
BZX84C3V3TW_R1_00001
Panjit International Inc.
TRIPLE ISOLATED SURFACE MOUNT ZE
BZX84C18W_R1_00001
BZX84C18W_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84B5V1_R1_00001
BZX84B5V1_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84C6V8_R1_00001
BZX84C6V8_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84A4V7_R1_00001
BZX84A4V7_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BC847BPN-AU_R1_000A1
BC847BPN-AU_R1_000A1
Panjit International Inc.
SOT-363, TRANSISTOR
BC847CPN_R1_00001
BC847CPN_R1_00001
Panjit International Inc.
DUAL GENERAL PURPOSE TRANSISTORS
BC847BW_R1_00001
BC847BW_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.1A SOT323
BC847C-AU_R1_000A1
BC847C-AU_R1_000A1
Panjit International Inc.
TRANS NPN 45V 0.1A SOT23