Overview
The BC858B-AU_R1_000A1 is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Panjit International Inc. This transistor is part of the BC856-AU series and is designed for a wide range of applications, including automotive and general-purpose amplification. It is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding environments. The transistor features a lead-free and halogen-free design, complying with EU RoHS 2011/65/EU and IEC61249 standards, respectively.
Key Specifications
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -30 | V |
| Collector-Base Voltage | VCBO | -50 | V |
| Emitter-Base Voltage | VEBO | -5 | V |
| Collector Current - Continuous | IC | -100 | mA |
| Peak Collector Current | ICM | -200 | mA |
| Max Power Dissipation | PTOT | 330 | mW |
| Typical Thermal Resistance, Junction to Ambient | RΘJA | 375 | °C/W |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -50 to 150 | °C |
| DC Current Gain (hFE) at IC=-10mA, VCE=-5V | hFE | 180-290 | |
| Collector-Emitter Saturation Voltage at IC=-10mA, IB=-0.5mA | VCE(SAT) |
Key Features
- AEC-Q101 qualified for automotive applications.
- Lead-free and halogen-free design, compliant with EU RoHS 2011/65/EU and IEC61249 standards.
- General-purpose amplifier applications.
- Collector current of -100 mA and peak collector current of -200 mA.
- Maximum power dissipation of 330 mW.
- Surface mount SOT-23 package.
- TS16949 quality system certificate.
Applications
The BC858B-AU_R1_000A1 transistor is suitable for a variety of applications, including:
- Automotive systems: Given its AEC-Q101 qualification, it is ideal for use in automotive electronics.
- General-purpose amplification: It can be used in various amplifier circuits requiring a PNP transistor.
- Consumer electronics: Suitable for use in audio amplifiers, switching circuits, and other general-purpose electronic devices.
Q & A
- What is the collector-emitter voltage (VCEO) of the BC858B-AU_R1_000A1 transistor?
The collector-emitter voltage (VCEO) is -30 V. - Is the BC858B-AU_R1_000A1 transistor AEC-Q101 qualified?
Yes, the BC858B-AU_R1_000A1 transistor is AEC-Q101 qualified. - What is the maximum collector current (IC) of the BC858B-AU_R1_000A1 transistor?
The maximum collector current (IC) is -100 mA. - What is the peak collector current (ICM) of the BC858B-AU_R1_000A1 transistor?
The peak collector current (ICM) is -200 mA. - What is the maximum power dissipation (PTOT) of the BC858B-AU_R1_000A1 transistor?
The maximum power dissipation (PTOT) is 330 mW. - What is the typical thermal resistance, junction to ambient (RΘJA), of the BC858B-AU_R1_000A1 transistor?
The typical thermal resistance, junction to ambient (RΘJA), is 375 °C/W. - What is the operating junction and storage temperature range of the BC858B-AU_R1_000A1 transistor?
The operating junction and storage temperature range is -50 to 150 °C. - Is the BC858B-AU_R1_000A1 transistor lead-free and halogen-free?
Yes, the BC858B-AU_R1_000A1 transistor is lead-free and halogen-free, complying with EU RoHS 2011/65/EU and IEC61249 standards. - What package type does the BC858B-AU_R1_000A1 transistor use?
The BC858B-AU_R1_000A1 transistor uses a surface mount SOT-23 package. - What quality system certificate does the BC858B-AU_R1_000A1 transistor have?
The BC858B-AU_R1_000A1 transistor has a TS16949 quality system certificate.
