BC859B-AU_R1_000A1
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Panjit International Inc. BC859B-AU_R1_000A1

Manufacturer No:
BC859B-AU_R1_000A1
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC859B-AU_R1_000A1 is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Panjit International Inc. This transistor is part of the BC856-AU series and is designed for a wide range of general-purpose amplifier applications. It is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. The transistor features a lead-free and halogen-free design, complying with EU RoHS 2011/65/EU and IEC61249 standards.

Key Specifications

ParameterSymbolValueUnits
Collector - Emitter VoltageVCEO-30V
Collector - Base VoltageVCBO-50V
Emitter - Base VoltageVEBO-5V
Collector Current - ContinuousIC-100mA
Peak Collector CurrentICM-200mA
Max Power DissipationPTOT330mW
Typical Thermal Resistance, Junction to AmbientRΘJA375°C/W
Operating Junction and Storage Temperature RangeTJ, TSTG-50 to 150°C
DC Current Gain (IC=-10mA, VCE=-5V)hFE180-290
DC Current Gain (IC=-2mA, VCE=-5V)hFE290-520

Key Features

  • PNP epitaxial silicon, planar design
  • General purpose amplifier applications
  • AEC-Q101 qualified for automotive use
  • Lead-free and halogen-free in compliance with EU RoHS 2011/65/EU and IEC61249 standards
  • Collector current IC = -100 mA
  • Complimentary NPN devices available (BC846AW/BC847AW/BC848AW/BC849BW series)
  • SOT-23 package with solderable terminals per MIL-STD-750, Method 2026

Applications

The BC859B-AU_R1_000A1 transistor is suitable for a variety of general-purpose amplifier applications, including but not limited to:

  • Automotive electronics due to its AEC-Q101 qualification
  • Industrial control systems
  • Consumer electronics
  • Audio and video equipment

Q & A

  1. What is the collector-emitter voltage rating of the BC859B-AU_R1_000A1 transistor? The collector-emitter voltage rating is -30 V.
  2. What is the maximum collector current for this transistor? The maximum continuous collector current is -100 mA.
  3. Is the BC859B-AU_R1_000A1 transistor AEC-Q101 qualified? Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.
  4. What is the package type of the BC859B-AU_R1_000A1 transistor? The transistor is packaged in a SOT-23 case.
  5. What are the operating temperature ranges for this transistor? The operating junction and storage temperature range is -50 to 150 °C.
  6. Is the BC859B-AU_R1_000A1 transistor lead-free and halogen-free? Yes, it is lead-free and halogen-free, complying with EU RoHS 2011/65/EU and IEC61249 standards.
  7. What is the typical thermal resistance of the BC859B-AU_R1_000A1 transistor? The typical thermal resistance, junction to ambient, is 375 °C/W.
  8. What are the DC current gain values for this transistor? The DC current gain (hFE) is 180-290 at IC=-10mA, VCE=-5V, and 290-520 at IC=-2mA, VCE=-5V.
  9. Are there complimentary NPN devices available for the BC859B-AU_R1_000A1 transistor? Yes, complimentary NPN devices are available in the BC846AW/BC847AW/BC848AW/BC849BW series.
  10. What is the maximum power dissipation of the BC859B-AU_R1_000A1 transistor? The maximum power dissipation is 330 mW.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:200MHz
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
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Similar Products

Part Number BC859B-AU_R1_000A1 BC858B-AU_R1_000A1
Manufacturer Panjit International Inc. Panjit International Inc.
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 330 mW 330 mW
Frequency - Transition 200MHz 200MHz
Operating Temperature -50°C ~ 150°C (TJ) -50°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 SOT-23

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