BC847BFN3_R1_00001
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Panjit International Inc. BC847BFN3_R1_00001

Manufacturer No:
BC847BFN3_R1_00001
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A 3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BFN3_R1_00001 is a general-purpose NPN bipolar transistor manufactured by Panjit International Inc. This transistor is designed for small signal amplification and is particularly suited for audio frequency applications. It is packaged in a SOT-23 (TO-236AB) surface mount configuration, making it ideal for modern electronic designs where space is a constraint.

Key Specifications

ParameterValue
Package CodeTO-236AB (SOT-23)
Number of Terminals3
PolarityNPN
Collector Power Dissipation (PC)0.2 W
Collector-Emitter Voltage (VCEO)45 V
Collector-Base Voltage (VCBO)50 V
Collector Current (Ic)0.1 A (100 mA)
Current Gain (hFE)200 to 450
Mounting StyleSurface Mount
Storage Temperature-55°C to 150°C
Package Size2.9x2.4 mm (t=1.2 mm)

Key Features

  • High collector-emitter voltage (VCEO) of 45 V, making it suitable for a variety of applications.
  • Current gain (hFE) range of 200 to 450, providing reliable amplification.
  • Low collector power dissipation of 0.2 W, which helps in managing thermal issues.
  • Compact SOT-23 package, ideal for space-constrained designs.
  • Wide storage temperature range of -55°C to 150°C, ensuring durability in various environmental conditions.

Applications

The BC847BFN3_R1_00001 transistor is versatile and can be used in a range of applications, including:

  • Audio frequency small signal amplification.
  • General-purpose amplification in electronic circuits.
  • Automotive electronics (contact sales for specific automotive usage).
  • Consumer electronics where small signal amplification is required.

Q & A

  1. What is the package type of the BC847BFN3_R1_00001 transistor?
    The BC847BFN3_R1_00001 transistor is packaged in a SOT-23 (TO-236AB) surface mount configuration.
  2. What is the maximum collector-emitter voltage (VCEO) of this transistor?
    The maximum collector-emitter voltage (VCEO) is 45 V.
  3. What is the current gain (hFE) range of this transistor?
    The current gain (hFE) range is from 200 to 450.
  4. What is the maximum collector current (Ic) of this transistor?
    The maximum collector current (Ic) is 0.1 A (100 mA).
  5. What is the storage temperature range for this transistor?
    The storage temperature range is from -55°C to 150°C.
  6. Is this transistor suitable for automotive applications?
    Yes, but for specific automotive usage, you should contact the sales department.
  7. What are the typical applications of the BC847BFN3_R1_00001 transistor?
    It is typically used in audio frequency small signal amplification and general-purpose amplification in electronic circuits.
  8. What is the collector power dissipation (PC) of this transistor?
    The collector power dissipation (PC) is 0.2 W.
  9. What is the package size of the BC847BFN3_R1_00001 transistor?
    The package size is 2.9x2.4 mm (t=1.2 mm).
  10. Is the BC847BFN3_R1_00001 transistor available for purchase through major distributors?
    Yes, it is available through distributors like Mouser, Digi-Key, and others.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-UFDFN
Supplier Device Package:3-DFN (0.6x1)
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In Stock

$0.27
2,400

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