BC847CPN-AU_R1_000A1
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Panjit International Inc. BC847CPN-AU_R1_000A1

Manufacturer No:
BC847CPN-AU_R1_000A1
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
DUAL GENERAL PURPOSE TRANSISTORS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CPN-AU_R1_000A1 is a bipolar junction transistor (BJT) produced by Panjit International Inc. This component is part of the BC846X-AU series and is designed for general-purpose amplifier applications. It features an NPN epitaxial silicon, planar design, making it suitable for a wide range of electronic circuits. The transistor is AEC-Q101 qualified, ensuring its reliability and performance in automotive and other demanding environments.

Key Specifications

ParameterSymbolValueUnits
Collector - Emitter VoltageVCEO45V
Collector - Base VoltageVCBO50V
Emitter - Base VoltageVEBO6V
Collector Current - ContinuousIC100mA
Peak Collector CurrentICM200mA
Max Power DissipationPTOT330mW
Thermal Resistance, Junction to AmbientRθJA375°C/W
Operating Junction Temperature RangeTJ-55 to 150°C
DC Current Gain (hFE) at IC = 10mA, VCE = 5VhFE200
Collector - Emitter Saturation VoltageVCE(SAT)0.25V
Base - Emitter Saturation VoltageVBE(SAT)0.7V

Key Features

  • NPN epitaxial silicon, planar design
  • AEC-Q101 qualified for automotive and other demanding applications
  • Collector current IC = 100mA
  • Peak collector current ICM = 200mA
  • High DC current gain (hFE) for reliable amplification
  • Low collector-emitter saturation voltage and base-emitter saturation voltage
  • Surface mount SOT-363 package for compact design

Applications

The BC847CPN-AU_R1_000A1 is suitable for a variety of general-purpose amplifier applications, including but not limited to:

  • Automotive systems due to its AEC-Q101 qualification
  • Audio amplifiers and signal processing circuits
  • Switching and power management circuits
  • Industrial control systems
  • Consumer electronics requiring reliable and efficient amplification

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BC847CPN-AU_R1_000A1?
    The collector-emitter voltage (VCEO) is 45V.
  2. What is the maximum collector current (IC) of this transistor?
    The maximum collector current (IC) is 100mA.
  3. Is the BC847CPN-AU_R1_000A1 AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified.
  4. What is the thermal resistance, junction to ambient (RθJA), of this transistor?
    The thermal resistance, junction to ambient (RθJA), is 375°C/W.
  5. What is the operating junction temperature range of the BC847CPN-AU_R1_000A1?
    The operating junction temperature range is -55°C to 150°C.
  6. What is the DC current gain (hFE) at IC = 10mA and VCE = 5V?
    The DC current gain (hFE) at IC = 10mA and VCE = 5V is 200.
  7. What is the collector-emitter saturation voltage (VCE(SAT)) of this transistor?
    The collector-emitter saturation voltage (VCE(SAT)) is 0.25V.
  8. What package type does the BC847CPN-AU_R1_000A1 use?
    The BC847CPN-AU_R1_000A1 uses a surface mount SOT-363 package.
  9. What are some common applications of the BC847CPN-AU_R1_000A1?
    Common applications include automotive systems, audio amplifiers, switching and power management circuits, industrial control systems, and consumer electronics.
  10. Where can I find detailed specifications for the BC847CPN-AU_R1_000A1?
    Detailed specifications can be found on the official Panjit International Inc. website, as well as on distributor websites such as Digi-Key, Mouser, and Jfchips.

Product Attributes

Transistor Type:NPN, PNP Complementary
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:380mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
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