2N7002KW-AU_R1_000A1
  • Share:

Panjit International Inc. 2N7002KW-AU_R1_000A1

Manufacturer No:
2N7002KW-AU_R1_000A1
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
SOT-323, MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002KW-AU_R1_000A1 is an N-Channel Enhancement Mode Field Effect Transistor (FET) produced by Panjit International Inc. This device is part of the 2N7002KW series and is known for its low on-resistance, low gate threshold voltage, and fast switching speed. It is packaged in a small SOT-323 surface mount package, making it suitable for a variety of compact electronic designs. The transistor is Pb-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Maximum Drain Current (Continuous) ID 250 mA mA
Maximum Drain Current (Pulsed) ID 1 A A
Operating Junction Temperature Range TJ -55 to +150 °C
Storage Temperature Range TSTG -55 to +150 °C
On-Resistance at VGS = 10V, ID = 500mA RDS(ON) 3 Ω Ω
Gate Threshold Voltage at ID = 250μA, VDS = 5V VGS(TH) 2.5 V V

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package (SOT-323)
  • Pb-Free and RoHS Compliant
  • High ESD Protection: HBM = 1000 V, CDM = 1500 V

Applications

The 2N7002KW-AU_R1_000A1 is versatile and can be used in a variety of applications, including:

  • General Purpose Switching
  • Power Management Circuits
  • Motor Control
  • Audio Amplifiers
  • Automotive Electronics
  • Consumer Electronics

Q & A

  1. What is the maximum drain-source voltage of the 2N7002KW-AU_R1_000A1?

    The maximum drain-source voltage is 60 V.

  2. What is the gate-source voltage range for this transistor?

    The gate-source voltage range is ±20 V.

  3. What is the maximum continuous drain current?

    The maximum continuous drain current is 250 mA.

  4. What is the operating junction temperature range?

    The operating junction temperature range is -55°C to +150°C.

  5. Is the 2N7002KW-AU_R1_000A1 Pb-free and RoHS compliant?
  6. What is the on-resistance at VGS = 10V, ID = 500mA?

    The on-resistance is 3 Ω.

  7. What is the gate threshold voltage at ID = 250μA, VDS = 5V?

    The gate threshold voltage is 2.5 V.

  8. What type of package does the 2N7002KW-AU_R1_000A1 come in?
  9. What are some common applications for this transistor?
  10. What is the ESD protection level for this transistor?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:24 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.27
1,836

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44M32S0V3S/AA
DD44M32S0V3S/AA
CONN D-SUB HD PLUG 44P VERT SLDR
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

BAV70-AU_R1_000A1
BAV70-AU_R1_000A1
Panjit International Inc.
SOT-23, SWITCHING
BAT54_R1_00001
BAT54_R1_00001
Panjit International Inc.
SOT-23, SKY
BAS20W_R1_00001
BAS20W_R1_00001
Panjit International Inc.
SURFACE MOUNT SWITCHING DIODE
BZX84C75TW_R1_00001
BZX84C75TW_R1_00001
Panjit International Inc.
TRIPLE ISOLATED SURFACE MOUNT ZE
BZX84C9V1TW_R1_00001
BZX84C9V1TW_R1_00001
Panjit International Inc.
TRIPLE ISOLATED SURFACE MOUNT ZE
BZX84C7V5_R1_00001
BZX84C7V5_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84B2V7_R1_00001
BZX84B2V7_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84B5V6_R1_00001
BZX84B5V6_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PDZ5.6B_R1_00001
PDZ5.6B_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84B11-AU_R1_000A1
BZX84B11-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
PDZ6.8B-AU_R1_000A1
PDZ6.8B-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BC807-25W_R1_00001
BC807-25W_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.5A SOT323