2N7002KW-AU_R1_000A1
  • Share:

Panjit International Inc. 2N7002KW-AU_R1_000A1

Manufacturer No:
2N7002KW-AU_R1_000A1
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
SOT-323, MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002KW-AU_R1_000A1 is an N-Channel Enhancement Mode Field Effect Transistor (FET) produced by Panjit International Inc. This device is part of the 2N7002KW series and is known for its low on-resistance, low gate threshold voltage, and fast switching speed. It is packaged in a small SOT-323 surface mount package, making it suitable for a variety of compact electronic designs. The transistor is Pb-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Maximum Drain Current (Continuous) ID 250 mA mA
Maximum Drain Current (Pulsed) ID 1 A A
Operating Junction Temperature Range TJ -55 to +150 °C
Storage Temperature Range TSTG -55 to +150 °C
On-Resistance at VGS = 10V, ID = 500mA RDS(ON) 3 Ω Ω
Gate Threshold Voltage at ID = 250μA, VDS = 5V VGS(TH) 2.5 V V

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package (SOT-323)
  • Pb-Free and RoHS Compliant
  • High ESD Protection: HBM = 1000 V, CDM = 1500 V

Applications

The 2N7002KW-AU_R1_000A1 is versatile and can be used in a variety of applications, including:

  • General Purpose Switching
  • Power Management Circuits
  • Motor Control
  • Audio Amplifiers
  • Automotive Electronics
  • Consumer Electronics

Q & A

  1. What is the maximum drain-source voltage of the 2N7002KW-AU_R1_000A1?

    The maximum drain-source voltage is 60 V.

  2. What is the gate-source voltage range for this transistor?

    The gate-source voltage range is ±20 V.

  3. What is the maximum continuous drain current?

    The maximum continuous drain current is 250 mA.

  4. What is the operating junction temperature range?

    The operating junction temperature range is -55°C to +150°C.

  5. Is the 2N7002KW-AU_R1_000A1 Pb-free and RoHS compliant?
  6. What is the on-resistance at VGS = 10V, ID = 500mA?

    The on-resistance is 3 Ω.

  7. What is the gate threshold voltage at ID = 250μA, VDS = 5V?

    The gate threshold voltage is 2.5 V.

  8. What type of package does the 2N7002KW-AU_R1_000A1 come in?
  9. What are some common applications for this transistor?
  10. What is the ESD protection level for this transistor?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:24 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.27
1,836

Please send RFQ , we will respond immediately.

Same Series
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60T0
DD44S32S60T0
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Brand

BAS21-AU_R1_000A1
BAS21-AU_R1_000A1
Panjit International Inc.
SOT-23, SWITCHING
BAT43WS_R1_00001
BAT43WS_R1_00001
Panjit International Inc.
SOD-323, SKY
BZX84C5V6-AU_R1_000A1
BZX84C5V6-AU_R1_000A1
Panjit International Inc.
SOT-23, ZENER
BZX84C14-AU_R1_000A1
BZX84C14-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84B5V1-AU_R1_000A1
BZX84B5V1-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84C39W_R1_00001
BZX84C39W_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
BZX84C56W_R1_00001
BZX84C56W_R1_00001
Panjit International Inc.
SURFACE MOUNT SILICON ZENER DIOD
MMBT2222AW_R1_00001
MMBT2222AW_R1_00001
Panjit International Inc.
TRANS NPN 40V 0.6A SOT323
BC817-25_R1_00001
BC817-25_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.5A SOT323
BC807-25-AU_R1_000A1
BC807-25-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.5A SOT23
BC817-40W_R1_00001
BC817-40W_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.5A SOT323
BC847AW_R1_00001
BC847AW_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.1A SOT323