Overview
The BC847CS_R1_00001, produced by Panjit International Inc., is a general-purpose NPN bipolar junction transistor (BJT) housed in the SOT-23 package. This transistor is designed for low-power surface mount applications and is suitable for various small signal amplifier roles, including audio frequency amplification.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | VCEO | 45 | V |
| Collector-Base Voltage (VCBO) | VCBO | 50 | V |
| Emitter-Base Voltage (VEBO) | VEBO | 6 | V |
| Collector Current (IC) | IC | 100 | mA |
| Peak Collector Current (ICM) | ICM | 200 | mA |
| Total Power Dissipation (Ptot) | Ptot | 250 | mW |
| Junction Temperature (Tj) | Tj | 150 | °C |
| DC Current Gain (hFE) | hFE | 420 to 800 | - |
| Transition Frequency (fT) | fT | >100 MHz | - |
| Noise Figure (F) | F | Typical 2 dB | - |
Key Features
- Silicon planar epitaxial transistors.
- General-purpose NPN transistors suitable for small signal amplifier applications.
- SOT-23 package, designed for low-power surface mount applications.
- Pb-free, halogen-free, and RoHS compliant.
- AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
- High DC current gain (hFE) ranging from 420 to 800.
- High transition frequency (fT) greater than 100 MHz.
Applications
- Small signal amplifier applications.
- Audio frequency amplification.
- General-purpose amplifier roles in various electronic circuits.
- Automotive and other applications requiring unique site and control change requirements.
Q & A
- What is the collector-emitter voltage (VCEO) of the BC847CS_R1_00001 transistor?
The collector-emitter voltage (VCEO) is 45 V.
- What is the maximum collector current (IC) for the BC847CS_R1_00001 transistor?
The maximum collector current (IC) is 100 mA.
- What is the peak collector current (ICM) for the BC847CS_R1_00001 transistor?
The peak collector current (ICM) is 200 mA.
- What is the total power dissipation (Ptot) for the BC847CS_R1_00001 transistor?
The total power dissipation (Ptot) is 250 mW.
- What is the junction temperature (Tj) for the BC847CS_R1_00001 transistor?
The junction temperature (Tj) is 150 °C.
- What is the DC current gain (hFE) range for the BC847CS_R1_00001 transistor?
The DC current gain (hFE) ranges from 420 to 800.
- What is the transition frequency (fT) of the BC847CS_R1_00001 transistor?
The transition frequency (fT) is greater than 100 MHz.
- Is the BC847CS_R1_00001 transistor RoHS compliant?
- What package type is the BC847CS_R1_00001 transistor housed in?
The BC847CS_R1_00001 transistor is housed in the SOT-23 package.
- What are some common applications of the BC847CS_R1_00001 transistor?
The BC847CS_R1_00001 transistor is commonly used in small signal amplifier applications, audio frequency amplification, and general-purpose amplifier roles.
