NST3906DXV6T1G
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onsemi NST3906DXV6T1G

Manufacturer No:
NST3906DXV6T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS 2PNP 40V 0.2A SOT563
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NST3906DXV6T1G is a dual general-purpose transistor device manufactured by onsemi. It is designed to integrate two discrete transistors into a single SOT-563 six-leaded surface mount package, making it ideal for low-power surface mount applications where board space is limited. This device is a spin-off of the popular SOT-23/SOT-323 three-leaded devices and is optimized for general-purpose amplifier applications.

Key Specifications

CharacteristicSymbolMinMaxUnit
Collector-Emitter VoltageVCEO-40Vdc
Collector-Base VoltageVCBO-40Vdc
Emitter-Base VoltageVEBO-5.0Vdc
Collector Current - ContinuousIC-200mAdc
DC Current Gain (hFE)hFE100300-
Collector-Emitter Saturation Voltage (VCE(sat))VCE(sat)-0.4Vdc
Base-Emitter Saturation Voltage (VBE(sat))VBE(sat)-0.65-0.95Vdc
Thermal Resistance Junction-to-Ambient (RθJA)RθJA-350°C/W
Junction and Storage Temperature RangeTJ, Tstg-55+150°C

Key Features

  • Compact Design: Housed in the SOT-563 six-leaded surface mount package, reducing board space and component count.
  • Low VCE(sat): Collector-Emitter Saturation Voltage of ≤ 0.4 V, enhancing efficiency in amplifier applications.
  • High DC Current Gain: hFE ranges from 100 to 300, suitable for a variety of amplifier configurations.
  • Lead-Free Solder Plating: Compliant with lead-free soldering requirements.
  • Thermal Performance: Total device dissipation of up to 500 mW at 25°C, with thermal resistance junction-to-ambient (RθJA) of 350 °C/W.
  • ESD Protection: Electrostatic Discharge (ESD) protection with HBM > 16000 V and MM > 2000 V.

Applications

The NST3906DXV6T1G is suitable for various general-purpose amplifier applications, including but not limited to:

  • Low-power surface mount designs where space is a constraint.
  • Audio and small-signal amplifiers.
  • Switching circuits requiring low saturation voltages.
  • Automotive and industrial control systems.

Q & A

  1. What is the package type of the NST3906DXV6T1G?
    The NST3906DXV6T1G is housed in the SOT-563 six-leaded surface mount package.
  2. What is the maximum collector-emitter voltage (VCEO) for this device?
    The maximum collector-emitter voltage (VCEO) is 40 Vdc.
  3. What is the range of DC current gain (hFE) for this transistor?
    The DC current gain (hFE) ranges from 100 to 300.
  4. What is the collector-emitter saturation voltage (VCE(sat)) for this device?
    The collector-emitter saturation voltage (VCE(sat)) is ≤ 0.4 Vdc.
  5. Is the NST3906DXV6T1G lead-free?
    Yes, the NST3906DXV6T1G has lead-free solder plating.
  6. What is the thermal resistance junction-to-ambient (RθJA) for this device?
    The thermal resistance junction-to-ambient (RθJA) is 350 °C/W.
  7. What are the typical applications for the NST3906DXV6T1G?
    It is used in low-power surface mount designs, audio and small-signal amplifiers, switching circuits, and automotive and industrial control systems.
  8. What is the maximum collector current (IC) for continuous operation?
    The maximum collector current (IC) for continuous operation is 200 mAdc.
  9. What is the junction and storage temperature range for this device?
    The junction and storage temperature range is -55°C to +150°C.
  10. Does the NST3906DXV6T1G have ESD protection?
    Yes, it has ESD protection with HBM > 16000 V and MM > 2000 V.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):200mA
Voltage - Collector Emitter Breakdown (Max):40V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:500mW
Frequency - Transition:250MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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Same Series
NSVT3906DXV6T1G
NSVT3906DXV6T1G
TRANS 2PNP 40V 0.2A SOT563
NST3906DXV6T1
NST3906DXV6T1
TRANS 2PNP 40V 0.2A SOT563

Similar Products

Part Number NST3906DXV6T1G NST3946DXV6T1G NSVT3906DXV6T1G NST3904DXV6T1G NST3906DXV6T1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete
Transistor Type 2 PNP (Dual) NPN, PNP 2 PNP (Dual) 2 NPN (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 200mA 200mA 200mA 200mA 200mA
Voltage - Collector Emitter Breakdown (Max) 40V 40V 40V 40V 40V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) - - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 500mW 500mW 500mW 500mW 500mW
Frequency - Transition 250MHz 300MHz, 250MHz 250MHz 300MHz 250MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563 SOT-563 SOT-563 SOT-563

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