NST3906DXV6T1G
  • Share:

onsemi NST3906DXV6T1G

Manufacturer No:
NST3906DXV6T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS 2PNP 40V 0.2A SOT563
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NST3906DXV6T1G is a dual general-purpose transistor device manufactured by onsemi. It is designed to integrate two discrete transistors into a single SOT-563 six-leaded surface mount package, making it ideal for low-power surface mount applications where board space is limited. This device is a spin-off of the popular SOT-23/SOT-323 three-leaded devices and is optimized for general-purpose amplifier applications.

Key Specifications

CharacteristicSymbolMinMaxUnit
Collector-Emitter VoltageVCEO-40Vdc
Collector-Base VoltageVCBO-40Vdc
Emitter-Base VoltageVEBO-5.0Vdc
Collector Current - ContinuousIC-200mAdc
DC Current Gain (hFE)hFE100300-
Collector-Emitter Saturation Voltage (VCE(sat))VCE(sat)-0.4Vdc
Base-Emitter Saturation Voltage (VBE(sat))VBE(sat)-0.65-0.95Vdc
Thermal Resistance Junction-to-Ambient (RθJA)RθJA-350°C/W
Junction and Storage Temperature RangeTJ, Tstg-55+150°C

Key Features

  • Compact Design: Housed in the SOT-563 six-leaded surface mount package, reducing board space and component count.
  • Low VCE(sat): Collector-Emitter Saturation Voltage of ≤ 0.4 V, enhancing efficiency in amplifier applications.
  • High DC Current Gain: hFE ranges from 100 to 300, suitable for a variety of amplifier configurations.
  • Lead-Free Solder Plating: Compliant with lead-free soldering requirements.
  • Thermal Performance: Total device dissipation of up to 500 mW at 25°C, with thermal resistance junction-to-ambient (RθJA) of 350 °C/W.
  • ESD Protection: Electrostatic Discharge (ESD) protection with HBM > 16000 V and MM > 2000 V.

Applications

The NST3906DXV6T1G is suitable for various general-purpose amplifier applications, including but not limited to:

  • Low-power surface mount designs where space is a constraint.
  • Audio and small-signal amplifiers.
  • Switching circuits requiring low saturation voltages.
  • Automotive and industrial control systems.

Q & A

  1. What is the package type of the NST3906DXV6T1G?
    The NST3906DXV6T1G is housed in the SOT-563 six-leaded surface mount package.
  2. What is the maximum collector-emitter voltage (VCEO) for this device?
    The maximum collector-emitter voltage (VCEO) is 40 Vdc.
  3. What is the range of DC current gain (hFE) for this transistor?
    The DC current gain (hFE) ranges from 100 to 300.
  4. What is the collector-emitter saturation voltage (VCE(sat)) for this device?
    The collector-emitter saturation voltage (VCE(sat)) is ≤ 0.4 Vdc.
  5. Is the NST3906DXV6T1G lead-free?
    Yes, the NST3906DXV6T1G has lead-free solder plating.
  6. What is the thermal resistance junction-to-ambient (RθJA) for this device?
    The thermal resistance junction-to-ambient (RθJA) is 350 °C/W.
  7. What are the typical applications for the NST3906DXV6T1G?
    It is used in low-power surface mount designs, audio and small-signal amplifiers, switching circuits, and automotive and industrial control systems.
  8. What is the maximum collector current (IC) for continuous operation?
    The maximum collector current (IC) for continuous operation is 200 mAdc.
  9. What is the junction and storage temperature range for this device?
    The junction and storage temperature range is -55°C to +150°C.
  10. Does the NST3906DXV6T1G have ESD protection?
    Yes, it has ESD protection with HBM > 16000 V and MM > 2000 V.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):200mA
Voltage - Collector Emitter Breakdown (Max):40V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:500mW
Frequency - Transition:250MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
0 Remaining View Similar

In Stock

$0.45
342

Please send RFQ , we will respond immediately.

Same Series
NSVT3906DXV6T1G
NSVT3906DXV6T1G
TRANS 2PNP 40V 0.2A SOT563
NST3906DXV6T1
NST3906DXV6T1
TRANS 2PNP 40V 0.2A SOT563

Similar Products

Part Number NST3906DXV6T1G NST3946DXV6T1G NSVT3906DXV6T1G NST3904DXV6T1G NST3906DXV6T1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete
Transistor Type 2 PNP (Dual) NPN, PNP 2 PNP (Dual) 2 NPN (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 200mA 200mA 200mA 200mA 200mA
Voltage - Collector Emitter Breakdown (Max) 40V 40V 40V 40V 40V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) - - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 500mW 500mW 500mW 500mW 500mW
Frequency - Transition 250MHz 300MHz, 250MHz 250MHz 300MHz 250MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563 SOT-563 SOT-563 SOT-563

Related Product By Categories

BCV62AE6327HTSA1
BCV62AE6327HTSA1
Infineon Technologies
TRANS 2PNP 30V 0.1A SOT143
BC847AS_R1_00001
BC847AS_R1_00001
Panjit International Inc.
NPN GENERAL PURPOSE TRANSISTORS
BC847BVC-7
BC847BVC-7
Diodes Incorporated
TRANS 2NPN 45V 0.1A SOT563
BC846S-TP
BC846S-TP
Micro Commercial Co
DUALNPNSMALLSIGNALTRANSISTORSOT-
PEMX1,115
PEMX1,115
Nexperia USA Inc.
TRANS 2NPN 40V 0.1A SOT666
BC847AS-AU_R1_000A1
BC847AS-AU_R1_000A1
Panjit International Inc.
NPN GENERAL PURPOSE TRANSISTORS
BC856S,125
BC856S,125
Nexperia USA Inc.
TRANS 2PNP 65V 0.1A 6TSSOP
BC807DSF
BC807DSF
Nexperia USA Inc.
BC807DS/SOT457/SC-74
PMBT3946YPN/ZLX
PMBT3946YPN/ZLX
Nexperia USA Inc.
PMBT3946YPN/ZLX
BC846S/DG/B4F
BC846S/DG/B4F
Nexperia USA Inc.
TRANSISTOR GEN PURP
BC846S/DG/B2F
BC846S/DG/B2F
Nexperia USA Inc.
TRANS GEN PURPOSE SC-88
MBT3904DW1T1G-M01
MBT3904DW1T1G-M01
onsemi
TRANS NPN SS 40V 0.2A SC88

Related Product By Brand

MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN