Overview
The NST3906DXV6T1G is a dual general-purpose transistor device manufactured by onsemi. It is designed to integrate two discrete transistors into a single SOT-563 six-leaded surface mount package, making it ideal for low-power surface mount applications where board space is limited. This device is a spin-off of the popular SOT-23/SOT-323 three-leaded devices and is optimized for general-purpose amplifier applications.
Key Specifications
Characteristic | Symbol | Min | Max | Unit |
---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | 40 | Vdc |
Collector-Base Voltage | VCBO | - | 40 | Vdc |
Emitter-Base Voltage | VEBO | - | 5.0 | Vdc |
Collector Current - Continuous | IC | - | 200 | mAdc |
DC Current Gain (hFE) | hFE | 100 | 300 | - |
Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | - | 0.4 | Vdc |
Base-Emitter Saturation Voltage (VBE(sat)) | VBE(sat) | -0.65 | -0.95 | Vdc |
Thermal Resistance Junction-to-Ambient (RθJA) | RθJA | - | 350 | °C/W |
Junction and Storage Temperature Range | TJ, Tstg | -55 | +150 | °C |
Key Features
- Compact Design: Housed in the SOT-563 six-leaded surface mount package, reducing board space and component count.
- Low VCE(sat): Collector-Emitter Saturation Voltage of ≤ 0.4 V, enhancing efficiency in amplifier applications.
- High DC Current Gain: hFE ranges from 100 to 300, suitable for a variety of amplifier configurations.
- Lead-Free Solder Plating: Compliant with lead-free soldering requirements.
- Thermal Performance: Total device dissipation of up to 500 mW at 25°C, with thermal resistance junction-to-ambient (RθJA) of 350 °C/W.
- ESD Protection: Electrostatic Discharge (ESD) protection with HBM > 16000 V and MM > 2000 V.
Applications
The NST3906DXV6T1G is suitable for various general-purpose amplifier applications, including but not limited to:
- Low-power surface mount designs where space is a constraint.
- Audio and small-signal amplifiers.
- Switching circuits requiring low saturation voltages.
- Automotive and industrial control systems.
Q & A
- What is the package type of the NST3906DXV6T1G?
The NST3906DXV6T1G is housed in the SOT-563 six-leaded surface mount package. - What is the maximum collector-emitter voltage (VCEO) for this device?
The maximum collector-emitter voltage (VCEO) is 40 Vdc. - What is the range of DC current gain (hFE) for this transistor?
The DC current gain (hFE) ranges from 100 to 300. - What is the collector-emitter saturation voltage (VCE(sat)) for this device?
The collector-emitter saturation voltage (VCE(sat)) is ≤ 0.4 Vdc. - Is the NST3906DXV6T1G lead-free?
Yes, the NST3906DXV6T1G has lead-free solder plating. - What is the thermal resistance junction-to-ambient (RθJA) for this device?
The thermal resistance junction-to-ambient (RθJA) is 350 °C/W. - What are the typical applications for the NST3906DXV6T1G?
It is used in low-power surface mount designs, audio and small-signal amplifiers, switching circuits, and automotive and industrial control systems. - What is the maximum collector current (IC) for continuous operation?
The maximum collector current (IC) for continuous operation is 200 mAdc. - What is the junction and storage temperature range for this device?
The junction and storage temperature range is -55°C to +150°C. - Does the NST3906DXV6T1G have ESD protection?
Yes, it has ESD protection with HBM > 16000 V and MM > 2000 V.