Overview
The BC817-25-AU_R1_000A1 is a 45 V, 500 mA NPN general-purpose transistor produced by Panjit International Inc. This transistor is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for a wide range of electronic applications. It is part of the BC817 series, known for its excellent DC current gain characteristics and general-purpose amplifier capabilities.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | - | - | 50 | V | IC = 10 μA, IE = 0 A |
| Collector-Emitter Voltage | VCEO | - | - | 45 | V | IC = 10 mA, IB = 0 A |
| Emitter-Base Voltage | VEB0 | - | - | 5 | V | IE = 1 μA, IC = 0 A |
| Collector Current (DC) | IC | - | - | 500 | mA | - |
| Collector Current (Pulse) | ICP | - | - | 1000 | mA | - |
| Total Power Dissipation | PTOT | - | - | 330 | mW | Tamb ≤ 25 °C |
| Junction Temperature | TJ | - | - | 150 | °C | - |
| DC Current Gain | hFE | 160 | - | 400 | - | VCE = 1 V, IC = 100 mA |
| Collector-Emitter Saturation Voltage | VCE(SAT) | - | - | 0.7 | V | IC = 500 mA, IB = 50 mA |
Key Features
- Silicon NPN Epitaxial Type: The BC817-25-AU_R1_000A1 is built using silicon NPN epitaxial technology, ensuring high reliability and performance.
- Excellent DC Current Gain Characteristics: This transistor offers a DC current gain (hFE) ranging from 160 to 400, making it suitable for various amplifier applications.
- General Purpose Amplifier Application: It is designed for general-purpose amplifier and switching applications.
- AEC-Q101 Qualified: The transistor is qualified to the AEC-Q101 standard, making it suitable for automotive applications.
- Lead-Free and RoHS Compliant: The device is lead-free and compliant with EU RoHS 2.0, ensuring environmental sustainability.
- Green Molding Compound: The SOT23 package uses a green molding compound as per IEC 61249 Standard.
- PNP Complement: The PNP complement for this transistor is the BC807 series.
Applications
The BC817-25-AU_R1_000A1 transistor is versatile and can be used in a variety of applications, including:
- Automotive Systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
- General-Purpose Amplification: It can be used in various amplifier circuits for signal amplification.
- Switching Circuits: The transistor is also suitable for switching applications due to its high current handling capability.
- Consumer Electronics: It can be used in consumer electronics such as audio equipment, power supplies, and other general-purpose electronic devices.
- Industrial Control Systems: The transistor can be used in industrial control systems for various control and monitoring applications.
Q & A
- What is the maximum collector-emitter voltage of the BC817-25-AU_R1_000A1 transistor?
The maximum collector-emitter voltage (VCEO) is 45 V.
- What is the maximum collector current of the BC817-25-AU_R1_000A1 transistor?
The maximum collector current (IC) is 500 mA.
- What is the typical DC current gain (hFE) of the BC817-25-AU_R1_000A1 transistor?
The typical DC current gain (hFE) ranges from 160 to 400.
- What is the maximum junction temperature of the BC817-25-AU_R1_000A1 transistor?
The maximum junction temperature (TJ) is 150 °C.
- Is the BC817-25-AU_R1_000A1 transistor RoHS compliant?
Yes, the transistor is lead-free and compliant with EU RoHS 2.0.
- What is the package type of the BC817-25-AU_R1_000A1 transistor?
The transistor is packaged in a SOT23 (TO-236AB) package.
- What are the PNP complements for the BC817-25-AU_R1_000A1 transistor?
The PNP complements are the BC807 series.
- Is the BC817-25-AU_R1_000A1 transistor suitable for automotive applications?
Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.
- What is the collector-emitter saturation voltage (VCE(SAT)) of the BC817-25-AU_R1_000A1 transistor?
The collector-emitter saturation voltage (VCE(SAT)) is approximately 0.7 V.
- What is the total power dissipation (PTOT) of the BC817-25-AU_R1_000A1 transistor at 25 °C?
The total power dissipation (PTOT) is 330 mW at 25 °C.
