Overview
The MMBT3904FN3_R1_00001 is a bipolar junction transistor (BJT) produced by Panjit International Inc. This NPN transistor is designed for general-purpose applications and is known for its reliability and performance in various electronic circuits. It features a surface mount 3-DFN package, making it suitable for compact and efficient designs.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Emitter-Base Voltage (VEBO) | 6 V |
| Collector-Emitter Saturation Voltage | 300 mV |
| Power Dissipation (Pd) | 250 mW |
| Maximum Operating Temperature | +150°C |
| DC Collector/Base Gain (hfe) Min. | 100 at 10 mA, 1 V |
Key Features
- Surface mount 3-DFN package for compact designs
- NPN bipolar junction transistor for general-purpose applications
- High collector-emitter breakdown voltage of 40 V
- Low collector-emitter saturation voltage of 300 mV
- Maximum DC collector current of 200 mA
- High power dissipation of 250 mW
- Wide operating temperature range up to +150°C
Applications
The MMBT3904FN3_R1_00001 is versatile and can be used in a variety of applications, including:
- General-purpose switching and amplification
- Audio amplifiers
- Power supplies
- Automotive electronics
- Consumer electronics
Q & A
- What is the maximum collector current of the MMBT3904FN3_R1_00001?
The maximum collector current is 200 mA. - What is the collector-emitter breakdown voltage of this transistor?
The collector-emitter breakdown voltage is 40 V. - What is the emitter-base voltage (VEBO) of this transistor?
The emitter-base voltage (VEBO) is 6 V. - What is the collector-emitter saturation voltage of this transistor?
The collector-emitter saturation voltage is 300 mV. - What is the power dissipation (Pd) of this transistor?
The power dissipation (Pd) is 250 mW. - What is the maximum operating temperature of this transistor?
The maximum operating temperature is +150°C. - What is the DC collector/base gain (hfe) minimum of this transistor?
The DC collector/base gain (hfe) minimum is 100 at 10 mA, 1 V. - What type of package does the MMBT3904FN3_R1_00001 use?
The transistor uses a surface mount 3-DFN package. - What are some common applications of the MMBT3904FN3_R1_00001?
Common applications include general-purpose switching and amplification, audio amplifiers, power supplies, automotive electronics, and consumer electronics. - Who is the manufacturer of the MMBT3904FN3_R1_00001?
The manufacturer is Panjit International Inc.
