Overview
The FDG6321C-F169 is a dual N and P-channel logic level enhancement mode field effect transistor (FET) produced by onsemi. This device is fabricated using onsemi's proprietary high cell density DMOS technology, which is designed to minimize on-state resistance. It is particularly suited for low voltage applications and can replace bipolar digital transistors and small signal MOSFETs, eliminating the need for bias resistors.
Key Specifications
| Parameter | N-Channel | P-Channel | Units |
|---|---|---|---|
| Drain-Source Voltage (VDSS) | 25 | -25 | V |
| Gate-Source Voltage (VGSS) | 8 | -8 | V |
| Continuous Drain Current (ID) | 0.5 | -0.41 | A |
| Pulsed Drain Current (ID) | 1.5 | -1.2 | A |
| Maximum Power Dissipation (PD) | 0.3 | 0.3 | W |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to 150 | -55 to 150 | °C |
| ESD Rating (Human Body Model) | 6 kV | 6 kV | kV |
| On-State Resistance (RDS(ON)) @ VGS = 4.5 V | 0.45 Ω | 1.1 Ω | Ω |
| On-State Resistance (RDS(ON)) @ VGS = 2.7 V | 0.60 Ω | 1.5 Ω | Ω |
| Gate Threshold Voltage (VGS(th)) | 0.65 - 1.5 V | -0.65 - -1.5 V | V |
| Thermal Resistance, Junction-to-Ambient (RJA) | 415 °C/W | 415 °C/W | °C/W |
Key Features
- Very small package outline in SC70-6, SC-88, or SOT-363.
- Very low level gate drive requirements, allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
- Gate-source Zener for ESD ruggedness (>6 kV Human Body Model).
- Pb-free and RoHS compliant.
- No bias resistors required, making it a versatile replacement for multiple digital transistors.
Applications
The FDG6321C-F169 is suitable for a variety of low voltage applications, including but not limited to:
- Replacement for bipolar digital transistors and small signal MOSFETs.
- Low voltage logic circuits.
- Power management and switching applications.
- Portable electronic devices where low power consumption and small form factor are critical.
Q & A
- What is the FDG6321C-F169?
The FDG6321C-F169 is a dual N and P-channel logic level enhancement mode field effect transistor produced by onsemi. - What technology is used to fabricate the FDG6321C-F169?
It is fabricated using onsemi's proprietary high cell density DMOS technology. - What are the typical on-state resistances for the N and P channels?
The on-state resistance for the N-channel is typically 0.45 Ω at VGS = 4.5 V and 0.60 Ω at VGS = 2.7 V. For the P-channel, it is typically 1.1 Ω at VGS = -4.5 V and 1.5 Ω at VGS = -2.7 V. - What is the maximum drain current for the N and P channels?
The maximum continuous drain current for the N-channel is 0.5 A and for the P-channel is -0.41 A. - Is the FDG6321C-F169 Pb-free and RoHS compliant?
Yes, the FDG6321C-F169 is Pb-free and RoHS compliant. - What is the thermal resistance of the FDG6321C-F169?
The thermal resistance, junction-to-ambient (RJA), is 415 °C/W. - What are the operating and storage temperature ranges for the FDG6321C-F169?
The operating and storage temperature range is -55 to 150 °C. - What is the ESD rating of the FDG6321C-F169?
The ESD rating is 6 kV according to the Human Body Model. - What package types are available for the FDG6321C-F169?
The device is available in SC70-6, SC-88, and SOT-363 packages. - Is the FDG6321C-F169 still in production?
No, the FDG6321C-F169 is no longer manufactured and has been discontinued.
