STS5DNF60L
  • Share:

STMicroelectronics STS5DNF60L

Manufacturer No:
STS5DNF60L
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 5A 8-SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STS5DNF60L is a dual N-channel power MOSFET developed by STMicroelectronics using their unique STripFET process. This process is designed to minimize input capacitance and gate charge, making the device highly suitable for use as the primary switch in advanced high-efficiency isolated DC-DC converters. It is particularly beneficial for applications in telecom and computer systems, as well as any scenario requiring low gate charge driving capabilities.

Key Specifications

ParameterValue
Part NumberSTS5DNF60L
ManufacturerSTMicroelectronics
PackageSO-8
Drain-Source Voltage (Vds)60 V
Drain Current (Id)4 A
Gate Charge (Qg)Low gate charge
Operating Temperature (°C)-40 to 150°C
RoHS ComplianceEcopack2
AEC-Q101 QualifiedYes

Key Features

  • AEC-Q101 qualified for automotive applications
  • Exceptional dv/dt capability
  • 100% avalanche tested for robustness
  • Low gate charge for efficient switching
  • High packing density and low on-resistance
  • Rugged avalanche characteristics and high manufacturing reproducibility

Applications

The STS5DNF60L is ideal for use in advanced high-efficiency isolated DC-DC converters, particularly in telecom and computer applications. It is also suitable for various industrial and automotive applications where low gate charge driving is required. Other potential uses include power management in smart home devices, industrial control systems, and any application demanding high efficiency and reliability.

Q & A

  1. What is the STS5DNF60L? The STS5DNF60L is a dual N-channel power MOSFET developed by STMicroelectronics.
  2. What process is used to manufacture the STS5DNF60L? It is manufactured using STMicroelectronics' unique STripFET process.
  3. What are the key benefits of the STripFET process? The STripFET process minimizes input capacitance and gate charge, making it suitable for high-efficiency applications.
  4. What is the maximum drain-source voltage (Vds) of the STS5DNF60L? The maximum drain-source voltage is 60 V.
  5. What is the maximum drain current (Id) of the STS5DNF60L? The maximum drain current is 4 A.
  6. Is the STS5DNF60L AEC-Q101 qualified? Yes, it is AEC-Q101 qualified for automotive applications.
  7. What is the operating temperature range of the STS5DNF60L? The operating temperature range is -40 to 150°C.
  8. What package type is the STS5DNF60L available in? It is available in the SO-8 package.
  9. Is the STS5DNF60L RoHS compliant? Yes, it is RoHS compliant with an Ecopack2 rating.
  10. What are some typical applications of the STS5DNF60L? Typical applications include advanced high-efficiency isolated DC-DC converters in telecom, computer systems, and various industrial and automotive applications.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:5A
Rds On (Max) @ Id, Vgs:45mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1030pF @ 25V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
0 Remaining View Similar

In Stock

$1.62
327

Please send RFQ , we will respond immediately.

Similar Products

Part Number STS5DNF60L STS4DNF60L
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 60V 60V
Current - Continuous Drain (Id) @ 25°C 5A 4A
Rds On (Max) @ Id, Vgs 45mOhm @ 2A, 10V 55mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1030pF @ 25V 1030pF @ 25V
Power - Max 2W 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC

Related Product By Categories

FDS89161LZ
FDS89161LZ
onsemi
MOSFET 2N-CH 100V 2.7A 8SOIC
FDPC8012S
FDPC8012S
onsemi
MOSFET 2N-CH 25V 13A/26A PWR CLP
NTJD1155LT1G
NTJD1155LT1G
onsemi
MOSFET N/P-CH 8V 1.3A SOT363
FDG1024NZ
FDG1024NZ
onsemi
MOSFET 2N-CH 20V 1.2A SC70-6
NTZD3155CT1G
NTZD3155CT1G
onsemi
MOSFET N/P-CH 20V SOT-563
BUK9K18-40E,115
BUK9K18-40E,115
Nexperia USA Inc.
MOSFET 2N-CH 40V 30A LFPAK56D
2N7002DWAQ-7
2N7002DWAQ-7
Diodes Incorporated
2N7002 FAMILY SOT363 T&R 3K
2N7002KDW-HF
2N7002KDW-HF
Comchip Technology
MOSFET N-CH 60VDS 20VGS 340MA SO
STL38DN6F7AG
STL38DN6F7AG
STMicroelectronics
AUTOMOTIVE-GRADE DUAL N-CHANNEL
STS5DNF20V
STS5DNF20V
STMicroelectronics
MOSFET 2N-CH 20V 5A 8-SOIC
NTLJD3119CTAG
NTLJD3119CTAG
onsemi
MOSFET N/P-CH 20V 6WDFN
VEC2315-TL-W
VEC2315-TL-W
onsemi
MOSFET 2P-CH 60V 2.5A VEC8

Related Product By Brand

SATAULC6-2P6
SATAULC6-2P6
STMicroelectronics
TVS DIODE 5VWM 19VC SOT666
STTH30AC06FP
STTH30AC06FP
STMicroelectronics
DIODE GEN PURP 600V 30A TO220
BYT71-800
BYT71-800
STMicroelectronics
DIODE GEN PURP 800V 6A TO220AC
STP6NK90ZFP
STP6NK90ZFP
STMicroelectronics
MOSFET N-CH 900V 5.8A TO220FP
STHVDAC-303F6
STHVDAC-303F6
STMicroelectronics
IC DAC 8BIT 16FLIPCHIP
STM32F334R8T7
STM32F334R8T7
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64LQFP
STM32F423RHT6
STM32F423RHT6
STMicroelectronics
IC MCU 32BIT 1.5MB FLASH 64LQFP
TS914ID
TS914ID
STMicroelectronics
IC CMOS 4 CIRCUIT 14SO
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
STLVDS385BTR
STLVDS385BTR
STMicroelectronics
IC DRVR FLAT PANEL DISPL 56TSSOP
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223
VNQ6004SA-E
VNQ6004SA-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36