STS5DNF60L
  • Share:

STMicroelectronics STS5DNF60L

Manufacturer No:
STS5DNF60L
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 5A 8-SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STS5DNF60L is a dual N-channel power MOSFET developed by STMicroelectronics using their unique STripFET process. This process is designed to minimize input capacitance and gate charge, making the device highly suitable for use as the primary switch in advanced high-efficiency isolated DC-DC converters. It is particularly beneficial for applications in telecom and computer systems, as well as any scenario requiring low gate charge driving capabilities.

Key Specifications

ParameterValue
Part NumberSTS5DNF60L
ManufacturerSTMicroelectronics
PackageSO-8
Drain-Source Voltage (Vds)60 V
Drain Current (Id)4 A
Gate Charge (Qg)Low gate charge
Operating Temperature (°C)-40 to 150°C
RoHS ComplianceEcopack2
AEC-Q101 QualifiedYes

Key Features

  • AEC-Q101 qualified for automotive applications
  • Exceptional dv/dt capability
  • 100% avalanche tested for robustness
  • Low gate charge for efficient switching
  • High packing density and low on-resistance
  • Rugged avalanche characteristics and high manufacturing reproducibility

Applications

The STS5DNF60L is ideal for use in advanced high-efficiency isolated DC-DC converters, particularly in telecom and computer applications. It is also suitable for various industrial and automotive applications where low gate charge driving is required. Other potential uses include power management in smart home devices, industrial control systems, and any application demanding high efficiency and reliability.

Q & A

  1. What is the STS5DNF60L? The STS5DNF60L is a dual N-channel power MOSFET developed by STMicroelectronics.
  2. What process is used to manufacture the STS5DNF60L? It is manufactured using STMicroelectronics' unique STripFET process.
  3. What are the key benefits of the STripFET process? The STripFET process minimizes input capacitance and gate charge, making it suitable for high-efficiency applications.
  4. What is the maximum drain-source voltage (Vds) of the STS5DNF60L? The maximum drain-source voltage is 60 V.
  5. What is the maximum drain current (Id) of the STS5DNF60L? The maximum drain current is 4 A.
  6. Is the STS5DNF60L AEC-Q101 qualified? Yes, it is AEC-Q101 qualified for automotive applications.
  7. What is the operating temperature range of the STS5DNF60L? The operating temperature range is -40 to 150°C.
  8. What package type is the STS5DNF60L available in? It is available in the SO-8 package.
  9. Is the STS5DNF60L RoHS compliant? Yes, it is RoHS compliant with an Ecopack2 rating.
  10. What are some typical applications of the STS5DNF60L? Typical applications include advanced high-efficiency isolated DC-DC converters in telecom, computer systems, and various industrial and automotive applications.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:5A
Rds On (Max) @ Id, Vgs:45mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1030pF @ 25V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
0 Remaining View Similar

In Stock

$1.62
327

Please send RFQ , we will respond immediately.

Similar Products

Part Number STS5DNF60L STS4DNF60L
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 60V 60V
Current - Continuous Drain (Id) @ 25°C 5A 4A
Rds On (Max) @ Id, Vgs 45mOhm @ 2A, 10V 55mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1030pF @ 25V 1030pF @ 25V
Power - Max 2W 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC

Related Product By Categories

2N7002PS/ZLX
2N7002PS/ZLX
NXP Semiconductors
NEXPERIA 2N7002PS - 60 V, 320 MA
STS4DPF20L
STS4DPF20L
STMicroelectronics
MOSFET 2P-CH 20V 4A 8SOIC
IRF7341TRPBF
IRF7341TRPBF
Infineon Technologies
MOSFET 2N-CH 55V 4.7A 8-SOIC
2N7002PS,125
2N7002PS,125
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.32A 6TSSOP
FDC6327C
FDC6327C
onsemi
MOSFET N/P-CH 20V SSOT-6
FDMB2308PZ
FDMB2308PZ
onsemi
MOSFET 2P-CH MLP2X3
BUK9K6R8-40EX
BUK9K6R8-40EX
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A 56LFPAK
NVMFD5C470NLT1G
NVMFD5C470NLT1G
onsemi
MOSFET 2N-CH 40V 36A S08FL
EFC4C002NLTDG
EFC4C002NLTDG
onsemi
MOSFET 2N-CH 8WLCSP
NVMFD5873NLT1G
NVMFD5873NLT1G
onsemi
MOSFET 2N-CH 60V 10A SO8FL
FDS8949-F085
FDS8949-F085
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 6
2N7002DWKX-13
2N7002DWKX-13
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363

Related Product By Brand

SM6T12CA
SM6T12CA
STMicroelectronics
TVS DIODE 10.2VWM 21.7VC SMB
STPSC10H12CWL
STPSC10H12CWL
STMicroelectronics
DIODE ARRAY SCHOTTKY 1200V TO247
Z0107NA 5AL2
Z0107NA 5AL2
STMicroelectronics
TRIAC SENS GATE 800V 1A TO92
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
STH410N4F7-6AG
STH410N4F7-6AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
L9613B013TR
L9613B013TR
STMicroelectronics
IC TRANSCEIVER HALF 1/1 8SO
HCF4069YUM013TR
HCF4069YUM013TR
STMicroelectronics
IC INVERTER 6CH 1 INP
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
L6235PD
L6235PD
STMicroelectronics
IC MOTOR DRVR 12V-52V 36POWERSO
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
L78M15CDT-TR
L78M15CDT-TR
STMicroelectronics
IC REG LINEAR 15V 500MA DPAK
ISM330DHCXTR
ISM330DHCXTR
STMicroelectronics
INEMO INERTIAL MODULE: ALWAYS-ON