Overview
The BSS8402DWQ-13 is a complementary pair enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. The BSS8402DWQ-13 is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.
Key Specifications
| Characteristic | Value | Unit | Test Condition |
|---|---|---|---|
| Drain-Source Voltage (VDS) | 60V (N-Channel), -50V (P-Channel) | V | VGS = 0V, ID = 250µA |
| On-Resistance (RDS(ON)) | 13.5Ω @ VGS = 10V (N-Channel), 10Ω @ VGS = -5V (P-Channel) | Ω | VGS = 10V, VDS = 7.5V (N-Channel), VGS = -5V, VDS = -7.5V (P-Channel) |
| Drain Current (ID) | 115mA (N-Channel), -130mA (P-Channel) | mA | TA = +25°C |
| Gate-Source Voltage (VGSS) | ±20V | V | Continuous |
| Input Capacitance (Ciss) | 22-50 pF | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance (Coss) | 11-25 pF | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Turn-On Delay Time (tD(ON)) | 7.0-20 ns | ns | VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω |
| Turn-Off Delay Time (tD(OFF)) | 11-20 ns | ns | VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω |
| Package | SOT363 | - | - |
| Weight | 0.006 grams (Approximate) | grams | - |
Key Features
- Low On-Resistance (RDS(ON))
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Complementary Pair
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
- General Purpose Interfacing Switch
- Power Management Functions
- Analog Switch
- Automotive applications requiring specific change control
Q & A
- What is the maximum drain-source voltage for the N-Channel and P-Channel MOSFETs in the BSS8402DWQ-13?
The maximum drain-source voltage is 60V for the N-Channel and -50V for the P-Channel.
- What are the typical on-resistances for the N-Channel and P-Channel MOSFETs?
The typical on-resistances are 13.5Ω at VGS = 10V for the N-Channel and 10Ω at VGS = -5V for the P-Channel.
- What is the maximum continuous drain current for each channel?
The maximum continuous drain current is 115mA for the N-Channel and -130mA for the P-Channel.
- What is the gate-source voltage range for the BSS8402DWQ-13?
The gate-source voltage range is ±20V.
- What are the typical input and output capacitances?
The typical input capacitance (Ciss) is 22-50 pF, and the typical output capacitance (Coss) is 11-25 pF.
- What are the turn-on and turn-off delay times for the BSS8402DWQ-13?
The turn-on delay time (tD(ON)) is 7.0-20 ns, and the turn-off delay time (tD(OFF)) is 11-20 ns.
- What package type is used for the BSS8402DWQ-13?
The package type is SOT363.
- Is the BSS8402DWQ-13 suitable for automotive applications?
Yes, it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications.
- Is the BSS8402DWQ-13 RoHS compliant and lead-free?
Yes, it is totally lead-free and fully RoHS compliant, and it is also halogen and antimony free.
- What is the weight of the BSS8402DWQ-13?
The weight is approximately 0.006 grams).
