ECH8651R-TL-HX
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onsemi ECH8651R-TL-HX

Manufacturer No:
ECH8651R-TL-HX
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 24V 10A ECH8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The ECH8651R-TL-HX is a dual N-channel MOSFET produced by onsemi, designed for high-performance applications. This component is part of the 2.5V drive series, making it suitable for a variety of power management and switching tasks. The MOSFET features low on-resistance and built-in protection diodes, along with gate protection resistors, enhancing its reliability and efficiency.

Key Specifications

ParameterValueUnit
Channel TypeN Channel
Drain-Source Voltage (Vds)24V
Continuous Drain Current (Id)10A
Drain-Source On-State Resistance0.0105Ω
Gate-Source Voltage (Vgss)±12V
Transistor Case StyleSOT-28FL
No. of Pins8
Power Dissipation1.4W
Operating Temperature Max150°C

Key Features

  • Low On-Resistance: Ensures minimal energy loss during operation.
  • 2.5V Drive: Suitable for low-voltage applications.
  • Common-Drain Type Dual MOSFET: Provides dual channels in a single package.
  • Built-in Protection Diodes: Enhances reliability by protecting against reverse voltage.
  • Built-in Gate Protection Resistors: Protects the gate from overvoltage.
  • Best suited for lithium battery (LiB) charging/discharging switching.

Applications

The ECH8651R-TL-HX is particularly suited for power management applications, including lithium battery charging and discharging, switching circuits, and other high-current, low-voltage applications.

Q & A

  1. What is the drain-source voltage rating of the ECH8651R-TL-HX?
    The drain-source voltage rating is 24V.
  2. What is the continuous drain current of the ECH8651R-TL-HX?
    The continuous drain current is 10A.
  3. What is the on-state resistance of the ECH8651R-TL-HX?
    The on-state resistance is 0.0105Ω.
  4. What is the package type of the ECH8651R-TL-HX?
    The package type is SOT-28FL.
  5. How many pins does the ECH8651R-TL-HX have?
    The component has 8 pins.
  6. What is the maximum operating temperature of the ECH8651R-TL-HX?
    The maximum operating temperature is 150°C.
  7. Is the ECH8651R-TL-HX RoHS compliant?
    Yes, the ECH8651R-TL-HX is RoHS compliant.
  8. What are the built-in protections of the ECH8651R-TL-HX?
    The component includes built-in protection diodes and gate protection resistors.
  9. What type of applications is the ECH8651R-TL-HX best suited for?
    The component is best suited for lithium battery charging/discharging switching and other power management applications.
  10. What is the gate-source voltage rating of the ECH8651R-TL-HX?
    The gate-source voltage rating is ±12V.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):24V
Current - Continuous Drain (Id) @ 25°C:10A
Rds On (Max) @ Id, Vgs:14mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:- 
Power - Max:1.5W
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:8-ECH
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Same Series
ECH8651R-TL-HX
ECH8651R-TL-HX
MOSFET 2N-CH 24V 10A ECH8

Similar Products

Part Number ECH8651R-TL-HX ECH8651R-TL-H
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 24V 24V
Current - Continuous Drain (Id) @ 25°C 10A 10A
Rds On (Max) @ Id, Vgs 14mOhm @ 5A, 4.5V 14mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds - -
Power - Max 1.5W 1.5W
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead
Supplier Device Package 8-ECH 8-ECH

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