FDT434P
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Fairchild Semiconductor FDT434P

Manufacturer No:
FDT434P
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
6A, 20V, 0.05OHM, P-CHANNEL, MO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDT434P is a P-Channel 2.5V specified PowerTrench® MOSFET produced by Fairchild Semiconductor, now part of onsemi. This MOSFET is fabricated using Fairchild's advanced PowerTrench process, which is tailored to enhance performance and efficiency. The FDT434P is designed to offer low on-resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current6 A
Rds On - Drain-Source Resistance50 mOhms
Vgs - Gate-Source Voltage± 8 V

Key Features

  • Low on-resistance (Rds On) of 50 mOhms, reducing power losses and improving efficiency.
  • High continuous drain current (Id) of 6 A, suitable for high-power applications.
  • Drain-source breakdown voltage (Vds) of 20 V, providing robust protection against voltage spikes.
  • Advanced PowerTrench process for enhanced performance and reliability.
  • Compact package design, suitable for space-constrained applications.

Applications

The FDT434P is versatile and can be used in various applications, including:

  • Power management and switching circuits.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Audio and video equipment.
  • Automotive and industrial control systems.

Q & A

  1. What is the continuous drain current of the FDT434P?
    The continuous drain current (Id) of the FDT434P is 6 A.
  2. What is the drain-source breakdown voltage of the FDT434P?
    The drain-source breakdown voltage (Vds) of the FDT434P is 20 V.
  3. What is the on-resistance of the FDT434P?
    The on-resistance (Rds On) of the FDT434P is 50 mOhms.
  4. What is the gate-source voltage range for the FDT434P?
    The gate-source voltage (Vgs) range for the FDT434P is ± 8 V.
  5. What process is used to fabricate the FDT434P?
    The FDT434P is fabricated using Fairchild's advanced PowerTrench process.
  6. What are some common applications for the FDT434P?
    The FDT434P is commonly used in power management, DC-DC converters, motor control, audio and video equipment, and automotive and industrial control systems.
  7. Who is the manufacturer of the FDT434P?
    The FDT434P is manufactured by Fairchild Semiconductor, now part of onsemi.
  8. What is the significance of the PowerTrench process in the FDT434P?
    The PowerTrench process enhances the performance and efficiency of the MOSFET by reducing on-resistance and improving current handling capabilities.
  9. Is the FDT434P suitable for high-power applications?
    Yes, the FDT434P is suitable for high-power applications due to its high continuous drain current and low on-resistance.
  10. Where can I find detailed specifications for the FDT434P?
    Detailed specifications for the FDT434P can be found in the datasheets available on websites such as Mouser Electronics, Farnell, and the official onsemi website.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:50mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1187 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-4
Package / Case:TO-261-4, TO-261AA
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