FDP045N10AF102
  • Share:

Fairchild Semiconductor FDP045N10AF102

Manufacturer No:
FDP045N10AF102
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
120A, 100V, N-CHANNEL POWER MOSF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDP045N10AF102 is a high-performance N-Channel Power MOSFET produced by Fairchild Semiconductor, now part of ON Semiconductor. This device is part of the Power Trench® MOSFET family, known for its advanced package and silicon combination, which provides low on-resistance (RDS(on)) and high efficiency. The FDP045N10AF102 is designed to meet the demands of various power management applications, offering superior thermal efficiency and enhanced body diode technology for soft recovery.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (VDSS)100V
Gate to Source Voltage (VGSS)20V
Drain Current (ID)120A
On-Resistance (RDS(on))Typically 4.5 mΩ at VGS = 10 V

Key Features

  • Advanced Power Trench® technology for low RDS(on) and high efficiency.
  • Thermally efficient packages to enhance heat dissipation.
  • Next-generation enhanced body diode technology for soft recovery.
  • High voltage and current handling capabilities, making it suitable for demanding power management applications.

Applications

The FDP045N10AF102 is suitable for a variety of applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power distribution.
  • Industrial power management, including inverters and switching power supplies.

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the FDP045N10AF102?
    The maximum drain to source voltage (VDSS) is 100 V.
  2. What is the maximum gate to source voltage (VGSS) of the FDP045N10AF102?
    The maximum gate to source voltage (VGSS) is 20 V.
  3. What is the maximum drain current (ID) of the FDP045N10AF102?
    The maximum drain current (ID) is 120 A.
  4. What is the typical on-resistance (RDS(on)) of the FDP045N10AF102?
    The typical on-resistance (RDS(on)) is 4.5 mΩ at VGS = 10 V.
  5. What technology does the FDP045N10AF102 use?
    The FDP045N10AF102 uses advanced Power Trench® technology.
  6. What are the key features of the FDP045N10AF102?
    The key features include low RDS(on), high efficiency, thermally efficient packages, and enhanced body diode technology for soft recovery.
  7. Where can the FDP045N10AF102 be used?
    The FDP045N10AF102 can be used in power supplies, DC-DC converters, motor control systems, automotive systems, and industrial power management.
  8. Who is the manufacturer of the FDP045N10AF102?
    The manufacturer is Fairchild Semiconductor, now part of ON Semiconductor.
  9. Where can I find more detailed specifications for the FDP045N10AF102?
    You can find detailed specifications in the datasheet available on the ON Semiconductor website or through distributors like Mouser Electronics.
  10. What is the significance of the enhanced body diode technology in the FDP045N10AF102?
    The enhanced body diode technology is engineered for soft recovery, which reduces switching losses and improves overall system efficiency.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:74 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5270 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):263W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
556

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26M20HT20/AA
DD26M20HT20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number FDP045N10AF102 FDP045N10A-F102
Manufacturer Fairchild Semiconductor onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V 4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V 74 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5270 pF @ 50 V 5270 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 263W (Tc) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

Related Product By Categories

NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

BAV99T
BAV99T
Fairchild Semiconductor
BAV99 - DUAL HIGH-SPEED SWITCHIN
BAR43C
BAR43C
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 2 ELEMENT,
MMSD4148-D87Z-FS
MMSD4148-D87Z-FS
Fairchild Semiconductor
RECTIFIER DIODE, 0.2A, 100V
MBR0540
MBR0540
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.5A, 40V
BZX79C20-T50A
BZX79C20-T50A
Fairchild Semiconductor
DIODE ZENER 20V 0.5W
MMBT3904SL
MMBT3904SL
Fairchild Semiconductor
TRANS NPN 40V 0.2A SOT923F
BD14010S
BD14010S
Fairchild Semiconductor
TRANS PNP 80V 1.5A TO126-3
MJD350
MJD350
Fairchild Semiconductor
TRANS PNP 300V 0.5A DPAK
74AC74MTCX
74AC74MTCX
Fairchild Semiconductor
IC FF D-TYPE DUAL 1BIT 14TSSOP
CD4049UBCSJ
CD4049UBCSJ
Fairchild Semiconductor
IC INVERTER 6CH 1-INP 16SOP
74LVX14MX
74LVX14MX
Fairchild Semiconductor
INVERTER, LV/LV-A/LVX/H SERIES,
MC34063ADX
MC34063ADX
Fairchild Semiconductor
SWITCHING REGLTR, VOLTAGE-MODE