FDP045N10AF102
  • Share:

Fairchild Semiconductor FDP045N10AF102

Manufacturer No:
FDP045N10AF102
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
120A, 100V, N-CHANNEL POWER MOSF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDP045N10AF102 is a high-performance N-Channel Power MOSFET produced by Fairchild Semiconductor, now part of ON Semiconductor. This device is part of the Power Trench® MOSFET family, known for its advanced package and silicon combination, which provides low on-resistance (RDS(on)) and high efficiency. The FDP045N10AF102 is designed to meet the demands of various power management applications, offering superior thermal efficiency and enhanced body diode technology for soft recovery.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (VDSS)100V
Gate to Source Voltage (VGSS)20V
Drain Current (ID)120A
On-Resistance (RDS(on))Typically 4.5 mΩ at VGS = 10 V

Key Features

  • Advanced Power Trench® technology for low RDS(on) and high efficiency.
  • Thermally efficient packages to enhance heat dissipation.
  • Next-generation enhanced body diode technology for soft recovery.
  • High voltage and current handling capabilities, making it suitable for demanding power management applications.

Applications

The FDP045N10AF102 is suitable for a variety of applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power distribution.
  • Industrial power management, including inverters and switching power supplies.

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the FDP045N10AF102?
    The maximum drain to source voltage (VDSS) is 100 V.
  2. What is the maximum gate to source voltage (VGSS) of the FDP045N10AF102?
    The maximum gate to source voltage (VGSS) is 20 V.
  3. What is the maximum drain current (ID) of the FDP045N10AF102?
    The maximum drain current (ID) is 120 A.
  4. What is the typical on-resistance (RDS(on)) of the FDP045N10AF102?
    The typical on-resistance (RDS(on)) is 4.5 mΩ at VGS = 10 V.
  5. What technology does the FDP045N10AF102 use?
    The FDP045N10AF102 uses advanced Power Trench® technology.
  6. What are the key features of the FDP045N10AF102?
    The key features include low RDS(on), high efficiency, thermally efficient packages, and enhanced body diode technology for soft recovery.
  7. Where can the FDP045N10AF102 be used?
    The FDP045N10AF102 can be used in power supplies, DC-DC converters, motor control systems, automotive systems, and industrial power management.
  8. Who is the manufacturer of the FDP045N10AF102?
    The manufacturer is Fairchild Semiconductor, now part of ON Semiconductor.
  9. Where can I find more detailed specifications for the FDP045N10AF102?
    You can find detailed specifications in the datasheet available on the ON Semiconductor website or through distributors like Mouser Electronics.
  10. What is the significance of the enhanced body diode technology in the FDP045N10AF102?
    The enhanced body diode technology is engineered for soft recovery, which reduces switching losses and improves overall system efficiency.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:74 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5270 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):263W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
556

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20WTS
DD15S20WTS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26M20HE0/AA
DD26M20HE0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number FDP045N10AF102 FDP045N10A-F102
Manufacturer Fairchild Semiconductor onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V 4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V 74 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5270 pF @ 50 V 5270 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 263W (Tc) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

Related Product By Categories

FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

BZX84C13
BZX84C13
Fairchild Semiconductor
DIODE ZENER 13V 0.25W 5% UNIDIR
TIP31CTU
TIP31CTU
Fairchild Semiconductor
TRANS NPN 100V 3A TO220-3
KSD471ACYTA
KSD471ACYTA
Fairchild Semiconductor
TRANS NPN 30V 1A TO92-3
NJVMJB44H11T4G
NJVMJB44H11T4G
Fairchild Semiconductor
TRANS NPN 80V 10A D2PAK
BCW60D
BCW60D
Fairchild Semiconductor
TRANS NPN 32V 0.1A SOT23-3
BC860C
BC860C
Fairchild Semiconductor
TRANS PNP 45V 0.1A SOT23-3
FDP86363_F085
FDP86363_F085
Fairchild Semiconductor
110A, 80V, 0.0028OHM, N-CHANNEL
FGD3040G2_F085
FGD3040G2_F085
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
CD4069UBCSJX
CD4069UBCSJX
Fairchild Semiconductor
IC INVERTER 6CH 1-INP 14SOP
NC7SV04FHX
NC7SV04FHX
Fairchild Semiconductor
IC INVERTER 1CH 1-INP 6MICROPAK2
LM336Z25X
LM336Z25X
Fairchild Semiconductor
IC VREF SHUNT 2% TO92-3
FOD817ASD_F117
FOD817ASD_F117
Fairchild Semiconductor
TRANSISTOR OUTPUT OPTOCOUPLER, 5