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FDP045N10AF102
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Fairchild Semiconductor FDP045N10AF102

Manufacturer No:
FDP045N10AF102
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
120A, 100V, N-CHANNEL POWER MOSF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDP045N10AF102 is a high-performance N-Channel Power MOSFET produced by Fairchild Semiconductor, now part of ON Semiconductor. This device is part of the Power Trench® MOSFET family, known for its advanced package and silicon combination, which provides low on-resistance (RDS(on)) and high efficiency. The FDP045N10AF102 is designed to meet the demands of various power management applications, offering superior thermal efficiency and enhanced body diode technology for soft recovery.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (VDSS)100V
Gate to Source Voltage (VGSS)20V
Drain Current (ID)120A
On-Resistance (RDS(on))Typically 4.5 mΩ at VGS = 10 VmΩ

Key Features

  • Advanced Power Trench® technology for low RDS(on) and high efficiency.
  • Thermally efficient packages to enhance heat dissipation.
  • Next-generation enhanced body diode technology for soft recovery.
  • High voltage and current handling capabilities, making it suitable for demanding power management applications.

Applications

The FDP045N10AF102 is suitable for a variety of applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power distribution.
  • Industrial power management, including inverters and switching power supplies.

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the FDP045N10AF102?
    The maximum drain to source voltage (VDSS) is 100 V.
  2. What is the maximum gate to source voltage (VGSS) of the FDP045N10AF102?
    The maximum gate to source voltage (VGSS) is 20 V.
  3. What is the maximum drain current (ID) of the FDP045N10AF102?
    The maximum drain current (ID) is 120 A.
  4. What is the typical on-resistance (RDS(on)) of the FDP045N10AF102?
    The typical on-resistance (RDS(on)) is 4.5 mΩ at VGS = 10 V.
  5. What technology does the FDP045N10AF102 use?
    The FDP045N10AF102 uses advanced Power Trench® technology.
  6. What are the key features of the FDP045N10AF102?
    The key features include low RDS(on), high efficiency, thermally efficient packages, and enhanced body diode technology for soft recovery.
  7. Where can the FDP045N10AF102 be used?
    The FDP045N10AF102 can be used in power supplies, DC-DC converters, motor control systems, automotive systems, and industrial power management.
  8. Who is the manufacturer of the FDP045N10AF102?
    The manufacturer is Fairchild Semiconductor, now part of ON Semiconductor.
  9. Where can I find more detailed specifications for the FDP045N10AF102?
    You can find detailed specifications in the datasheet available on the ON Semiconductor website or through distributors like Mouser Electronics.
  10. What is the significance of the enhanced body diode technology in the FDP045N10AF102?
    The enhanced body diode technology is engineered for soft recovery, which reduces switching losses and improves overall system efficiency.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:74 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5270 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):263W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FDP045N10AF102 FDP045N10A-F102
Manufacturer Fairchild Semiconductor onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V 4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V 74 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5270 pF @ 50 V 5270 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 263W (Tc) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

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