FDP045N10A-F102
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onsemi FDP045N10A-F102

Manufacturer No:
FDP045N10A-F102
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 100V 120A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDP045N10A-F102 is a high-performance N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is available in TO-220 and I2PAK packages, making it versatile for various applications. It is Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Unit Typical/Maximum Value
Drain to Source Voltage VDSS V 100
Gate to Source Voltage VGSS V ±20
Continuous Drain Current (TC = 25°C, Silicon Limited) ID A 164
Pulsed Drain Current IDM A 656
Power Dissipation (TC = 25°C) PD W 263
Operating and Storage Temperature Range TJ, TSTG °C -55 to +175
Maximum Lead Temperature for Soldering TL °C 300
Static Drain to Source On Resistance RDS(on) 3.8 (Typ.) @ VGS = 10 V, ID = 100 A
Total Gate Charge at 10V Qg(tot) nC 54 (Typ.)
Turn-On Delay Time td(on) ns 23 (Typ.)
Turn-On Rise Time tr ns 26 (Typ.)

Key Features

  • High Performance Trench Technology for Extremely Low RDS(on)
  • Fast Switching Speed
  • Low Gate Charge, QG = 54 nC (Typ.)
  • High Power and Current Handling Capability
  • Pb-free and RoHS Compliant

Applications

  • Synchronous Rectification for ATX / Server / Telecom PSU
  • Battery Protection Circuit
  • Motor Drives and Uninterruptible Power Supplies
  • Micro Solar Inverter

Q & A

  1. What is the maximum drain to source voltage of the FDP045N10A-F102 MOSFET?

    The maximum drain to source voltage (VDSS) is 100 V.

  2. What is the typical on-state resistance (RDS(on)) of this MOSFET?

    The typical on-state resistance (RDS(on)) is 3.8 mΩ at VGS = 10 V and ID = 100 A.

  3. What are the package options available for the FDP045N10A-F102?

    The device is available in TO-220 and I2PAK packages.

  4. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 164 A.

  5. Is the FDP045N10A-F102 Pb-free and RoHS compliant?
  6. What are some typical applications of the FDP045N10A-F102 MOSFET?

    Typical applications include synchronous rectification for ATX / Server / Telecom PSU, battery protection circuits, motor drives, uninterruptible power supplies, and micro solar inverters.

  7. What is the thermal resistance from junction to case (RθJC) for this MOSFET?

    The thermal resistance from junction to case (RθJC) is 0.57 °C/W maximum.

  8. What is the total gate charge at 10V for this device?

    The total gate charge at 10V (Qg(tot)) is 54 nC typical.

  9. What are the turn-on and turn-off times for the FDP045N10A-F102?

    The turn-on delay time (td(on)) is 23 ns typical, and the turn-off delay time (td(off)) is 50 ns typical.

  10. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 300 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:74 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5270 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):263W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Same Series
FDP045N10A
FDP045N10A
120A, 100V, 0.0045OHM, N CHANNEL
FDI045N10A
FDI045N10A
MOSFET N-CH 100V 120A I2PAK-3
FDI045N10A-F102
FDI045N10A-F102
MOSFET N-CH 100V 120A I2PAK

Similar Products

Part Number FDP045N10A-F102 FDP085N10A-F102 FDP045N10AF102
Manufacturer onsemi onsemi Fairchild Semiconductor
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 96A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V 8.5mOhm @ 96A, 10V 4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V 40 nC @ 10 V 74 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5270 pF @ 50 V 2695 pF @ 50 V 5270 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 263W (Tc) 188W (Tc) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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