Overview
The FDP045N10A-F102 is a high-performance N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is available in TO-220 and I2PAK packages, making it versatile for various applications. It is Pb-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
Parameter | Symbol | Unit | Typical/Maximum Value |
---|---|---|---|
Drain to Source Voltage | VDSS | V | 100 |
Gate to Source Voltage | VGSS | V | ±20 |
Continuous Drain Current (TC = 25°C, Silicon Limited) | ID | A | 164 |
Pulsed Drain Current | IDM | A | 656 |
Power Dissipation (TC = 25°C) | PD | W | 263 |
Operating and Storage Temperature Range | TJ, TSTG | °C | -55 to +175 |
Maximum Lead Temperature for Soldering | TL | °C | 300 |
Static Drain to Source On Resistance | RDS(on) | mΩ | 3.8 (Typ.) @ VGS = 10 V, ID = 100 A |
Total Gate Charge at 10V | Qg(tot) | nC | 54 (Typ.) |
Turn-On Delay Time | td(on) | ns | 23 (Typ.) |
Turn-On Rise Time | tr | ns | 26 (Typ.) |
Key Features
- High Performance Trench Technology for Extremely Low RDS(on)
- Fast Switching Speed
- Low Gate Charge, QG = 54 nC (Typ.)
- High Power and Current Handling Capability
- Pb-free and RoHS Compliant
Applications
- Synchronous Rectification for ATX / Server / Telecom PSU
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supplies
- Micro Solar Inverter
Q & A
- What is the maximum drain to source voltage of the FDP045N10A-F102 MOSFET?
The maximum drain to source voltage (VDSS) is 100 V.
- What is the typical on-state resistance (RDS(on)) of this MOSFET?
The typical on-state resistance (RDS(on)) is 3.8 mΩ at VGS = 10 V and ID = 100 A.
- What are the package options available for the FDP045N10A-F102?
The device is available in TO-220 and I2PAK packages.
- What is the maximum continuous drain current at 25°C?
The maximum continuous drain current (ID) at 25°C is 164 A.
- Is the FDP045N10A-F102 Pb-free and RoHS compliant?
- What are some typical applications of the FDP045N10A-F102 MOSFET?
Typical applications include synchronous rectification for ATX / Server / Telecom PSU, battery protection circuits, motor drives, uninterruptible power supplies, and micro solar inverters.
- What is the thermal resistance from junction to case (RθJC) for this MOSFET?
The thermal resistance from junction to case (RθJC) is 0.57 °C/W maximum.
- What is the total gate charge at 10V for this device?
The total gate charge at 10V (Qg(tot)) is 54 nC typical.
- What are the turn-on and turn-off times for the FDP045N10A-F102?
The turn-on delay time (td(on)) is 23 ns typical, and the turn-off delay time (td(off)) is 50 ns typical.
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 300 °C.