FDP045N10A-F102
  • Share:

onsemi FDP045N10A-F102

Manufacturer No:
FDP045N10A-F102
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 100V 120A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDP045N10A-F102 is a high-performance N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is available in TO-220 and I2PAK packages, making it versatile for various applications. It is Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Unit Typical/Maximum Value
Drain to Source Voltage VDSS V 100
Gate to Source Voltage VGSS V ±20
Continuous Drain Current (TC = 25°C, Silicon Limited) ID A 164
Pulsed Drain Current IDM A 656
Power Dissipation (TC = 25°C) PD W 263
Operating and Storage Temperature Range TJ, TSTG °C -55 to +175
Maximum Lead Temperature for Soldering TL °C 300
Static Drain to Source On Resistance RDS(on) 3.8 (Typ.) @ VGS = 10 V, ID = 100 A
Total Gate Charge at 10V Qg(tot) nC 54 (Typ.)
Turn-On Delay Time td(on) ns 23 (Typ.)
Turn-On Rise Time tr ns 26 (Typ.)

Key Features

  • High Performance Trench Technology for Extremely Low RDS(on)
  • Fast Switching Speed
  • Low Gate Charge, QG = 54 nC (Typ.)
  • High Power and Current Handling Capability
  • Pb-free and RoHS Compliant

Applications

  • Synchronous Rectification for ATX / Server / Telecom PSU
  • Battery Protection Circuit
  • Motor Drives and Uninterruptible Power Supplies
  • Micro Solar Inverter

Q & A

  1. What is the maximum drain to source voltage of the FDP045N10A-F102 MOSFET?

    The maximum drain to source voltage (VDSS) is 100 V.

  2. What is the typical on-state resistance (RDS(on)) of this MOSFET?

    The typical on-state resistance (RDS(on)) is 3.8 mΩ at VGS = 10 V and ID = 100 A.

  3. What are the package options available for the FDP045N10A-F102?

    The device is available in TO-220 and I2PAK packages.

  4. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 164 A.

  5. Is the FDP045N10A-F102 Pb-free and RoHS compliant?
  6. What are some typical applications of the FDP045N10A-F102 MOSFET?

    Typical applications include synchronous rectification for ATX / Server / Telecom PSU, battery protection circuits, motor drives, uninterruptible power supplies, and micro solar inverters.

  7. What is the thermal resistance from junction to case (RθJC) for this MOSFET?

    The thermal resistance from junction to case (RθJC) is 0.57 °C/W maximum.

  8. What is the total gate charge at 10V for this device?

    The total gate charge at 10V (Qg(tot)) is 54 nC typical.

  9. What are the turn-on and turn-off times for the FDP045N10A-F102?

    The turn-on delay time (td(on)) is 23 ns typical, and the turn-off delay time (td(off)) is 50 ns typical.

  10. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 300 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:74 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5270 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):263W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$4.33
155

Please send RFQ , we will respond immediately.

Same Series
FDP045N10A
FDP045N10A
120A, 100V, 0.0045OHM, N CHANNEL
FDI045N10A
FDI045N10A
MOSFET N-CH 100V 120A I2PAK-3
FDI045N10A-F102
FDI045N10A-F102
MOSFET N-CH 100V 120A I2PAK

Similar Products

Part Number FDP045N10A-F102 FDP085N10A-F102 FDP045N10AF102
Manufacturer onsemi onsemi Fairchild Semiconductor
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 96A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V 8.5mOhm @ 96A, 10V 4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V 40 nC @ 10 V 74 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5270 pF @ 50 V 2695 pF @ 50 V 5270 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 263W (Tc) 188W (Tc) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB

Related Product By Brand

MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
NTMFS015N15MC
NTMFS015N15MC
onsemi
MOSFET N-CH 150V 9.2A/61A 8PQFN
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP