FDP085N10A-F102
  • Share:

onsemi FDP085N10A-F102

Manufacturer No:
FDP085N10A-F102
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 100V 96A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDP085N10A-F102 is an N-Channel PowerTrench® MOSFET produced by onsemi. This device is designed to minimize on-state resistance while maintaining high performance and reliability. The PowerTrench process enhances the MOSFET's efficiency and reduces power losses, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
ID (Continuous Drain Current)96 A
RDS(ON) (On-State Resistance)8.5 mΩ
VGS(th) (Threshold Voltage)2.0 - 4.0 V
PD (Power Dissipation)200 W
TJ (Junction Temperature)-55°C to 150°C
PackageTO-247-3

Key Features

  • Low on-state resistance (RDS(ON)) of 8.5 mΩ, reducing power losses.
  • High continuous drain current (ID) of 96 A, suitable for high-power applications.
  • High drain-source voltage (VDS) of 100 V, providing robust performance in various conditions.
  • PowerTrench technology for enhanced efficiency and reliability.
  • TO-247-3 package, offering good thermal performance and ease of use.

Applications

The FDP085N10A-F102 is ideal for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and electric vehicle powertrains.
  • Industrial power systems, including inverters and switch-mode power supplies.

Q & A

  1. What is the maximum drain-source voltage of the FDP085N10A-F102?
    The maximum drain-source voltage is 100 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current rating is 96 A.
  3. What is the on-state resistance of the FDP085N10A-F102?
    The on-state resistance is 8.5 mΩ.
  4. What package type is the FDP085N10A-F102 available in?
    The FDP085N10A-F102 is available in the TO-247-3 package.
  5. What is the junction temperature range for this MOSFET?
    The junction temperature range is -55°C to 150°C.
  6. What technology is used in the production of the FDP085N10A-F102?
    The FDP085N10A-F102 is produced using onsemi's PowerTrench technology.
  7. What are some typical applications for the FDP085N10A-F102?
    Typical applications include power supplies, motor control systems, automotive systems, and industrial power systems.
  8. What is the maximum power dissipation of the FDP085N10A-F102?
    The maximum power dissipation is 200 W.
  9. What is the threshold voltage range for the FDP085N10A-F102?
    The threshold voltage range is 2.0 - 4.0 V.
  10. Is the FDP085N10A-F102 suitable for high-power switching applications?
    Yes, it is highly suitable due to its low on-state resistance and high current rating.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:96A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5mOhm @ 96A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2695 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):188W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.00
171

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDP085N10A-F102 FDP045N10A-F102
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 96A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 96A, 10V 4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 74 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2695 pF @ 50 V 5270 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 188W (Tc) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

Related Product By Categories

2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC