FDPF44N25TRDTU
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Fairchild Semiconductor FDPF44N25TRDTU

Manufacturer No:
FDPF44N25TRDTU
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
MOSFET N-CH 250V 44A TO220F
Delivery:
Payment:
iso14001
iso45001
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iso13485

Product Introduction

Overview

The FDPF44N25TRDTU is a high-performance N-Channel MOSFET produced by Fairchild Semiconductor, now part of onsemi. This device is designed to provide high current handling and low on-resistance, making it suitable for a variety of power management and switching applications. The MOSFET features a robust TO-220F (LG-Formed) package, which enhances thermal dissipation and mechanical stability.

Key Specifications

ParameterValue
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250 V
Continuous Drain Current (Id) @ 25°C44 A (Tc)
Power Dissipation (Pd) @ Tc38 W (Tc)
Package TypeThrough Hole TO-220F (LG-Formed)

Key Features

  • High current handling capability of up to 44 A at 25°C case temperature.
  • Low on-resistance, reducing power losses and improving efficiency.
  • Robust TO-220F (LG-Formed) package for enhanced thermal dissipation and mechanical stability.
  • High drain to source voltage rating of 250 V, suitable for high-voltage applications.

Applications

The FDPF44N25TRDTU is versatile and can be used in various applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Automotive and industrial power management systems.

Q & A

  1. What is the maximum drain to source voltage of the FDPF44N25TRDTU?
    The maximum drain to source voltage is 250 V.
  2. What is the continuous drain current rating at 25°C case temperature?
    The continuous drain current rating is 44 A at 25°C case temperature.
  3. What type of package does the FDPF44N25TRDTU use?
    The device uses a Through Hole TO-220F (LG-Formed) package.
  4. What is the power dissipation rating at the case temperature?
    The power dissipation rating is 38 W at the case temperature.
  5. What are some common applications for the FDPF44N25TRDTU?
    Common applications include power supplies, DC-DC converters, motor control systems, high-frequency switching circuits, and automotive and industrial power management systems.
  6. Who is the manufacturer of the FDPF44N25TRDTU?
    The manufacturer is Fairchild Semiconductor, now part of onsemi.
  7. What is the technology used in the FDPF44N25TRDTU?
    The technology used is MOSFET (Metal Oxide Semiconductor Field-Effect Transistor).
  8. Is the FDPF44N25TRDTU suitable for high-voltage applications?
    Yes, it is suitable for high-voltage applications due to its 250 V drain to source voltage rating.
  9. What are the benefits of the TO-220F (LG-Formed) package?
    The TO-220F (LG-Formed) package enhances thermal dissipation and provides mechanical stability.
  10. Where can I find detailed specifications and datasheets for the FDPF44N25TRDTU?
    Detailed specifications and datasheets can be found on the official websites of Fairchild Semiconductor, onsemi, and distributors like Digi-Key, Mouser, and Avnet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:69mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2870 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F (LG-Formed)
Package / Case:TO-220-3 Full Pack, Formed Leads
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FDPF44N25T
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