FDV302P_D87Z
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onsemi FDV302P_D87Z

Manufacturer No:
FDV302P_D87Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 25V 120MA SOT23
Delivery:
Payment:
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Product Introduction

Overview

The FDV302P_D87Z is a P-Channel logic level enhancement mode field effect transistor (FET) produced by onsemi. This device is fabricated using Fairchild's proprietary high cell density DMOS technology, which ensures high performance and reliability. The FDV302P_D87Z is packaged in a SOT-23-3 surface mount package, making it suitable for a variety of applications where space is limited.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)25 V
Continuous Drain Current (Id) @ 25°C120 mA
Drain to Source Resistance (Rds On) @ Id, Vgs13 Ω @ 4.5 V
Gate-Source Voltage (Vgs)8 V (Max)
Gate Threshold Voltage (Vgs(th)) @ Id1.5 V @ 250 µA
Gate Charge (Qg) @ Vgs0.31 nC @ 4.5 V
Input Capacitance (Ciss) @ Vds11 pF @ 10 V
Power Dissipation (Max)350 mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Package / CaseSOT-23-3

Key Features

  • P-Channel logic level enhancement mode FET
  • High cell density DMOS technology for high performance and reliability
  • Low input capacitance suitable for power switching and amplification
  • Surface mount SOT-23-3 package for compact designs
  • ESD protection for enhanced durability

Applications

The FDV302P_D87Z is versatile and can be used in various applications, including power switching, amplification, and general-purpose switching circuits. It is particularly suitable for designs where low input capacitance and high reliability are required, such as in consumer electronics, industrial control systems, and automotive electronics.

Q & A

  1. What is the drain to source voltage rating of the FDV302P_D87Z?
    The drain to source voltage rating is 25 V.
  2. What is the continuous drain current rating of the FDV302P_D87Z at 25°C?
    The continuous drain current rating is 120 mA.
  3. What is the typical drain to source resistance of the FDV302P_D87Z?
    The typical drain to source resistance is 13 Ω at 4.5 V.
  4. What is the maximum gate-source voltage for the FDV302P_D87Z?
    The maximum gate-source voltage is 8 V.
  5. What is the gate threshold voltage of the FDV302P_D87Z?
    The gate threshold voltage is 1.5 V at 250 µA.
  6. What is the input capacitance of the FDV302P_D87Z?
    The input capacitance is 11 pF at 10 V.
  7. What is the maximum power dissipation of the FDV302P_D87Z?
    The maximum power dissipation is 350 mW (Ta).
  8. What is the operating temperature range of the FDV302P_D87Z?
    The operating temperature range is -55°C ~ 150°C (TJ).
  9. In what package is the FDV302P_D87Z available?
    The FDV302P_D87Z is available in a SOT-23-3 surface mount package.
  10. Does the FDV302P_D87Z have ESD protection?
    Yes, the FDV302P_D87Z has ESD protection.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
Rds On (Max) @ Id, Vgs:10Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.31 nC @ 4.5 V
Vgs (Max):-8V
Input Capacitance (Ciss) (Max) @ Vds:11 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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FDV302P_D87Z
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