Overview
The 2SA2210-EPN-1E is a high-performance Bipolar Junction Transistor (BJT) manufactured by onsemi. This PNP transistor is designed for high-current switching applications and features a low collector to emitter saturation voltage (VCE(sat)). The 2SA2210-EPN-1E is housed in a TO-220F-3SG package, making it suitable for a variety of power management and switching roles in electronic circuits. The transistor benefits from the adoption of the MBIT (MegaBase Insulated Transistor) process, which enhances its speed and current handling capabilities.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Polarity | PNP | |
| Maximum Collector Current | 20 | A |
| Maximum Collector Emitter Breakdown Voltage | 50 | V |
| Maximum Collector Emitter Saturation Voltage | 500 mV @ 350 mA, 7 A | V |
| Maximum Cutoff Collector Current | 10 µA (ICBO) | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C (TJ) |
| Maximum Power Dissipation | 2 | W |
| Minimum DC Current Gain | 150 @ 1 A, 2 V | |
| Gain Bandwidth Product | 140 MHz | |
| Package Type | TO-220F-3SG | |
| Technology Type | SI |
Key Features
- Low VCE(sat): The transistor features a low collector to emitter saturation voltage, which is beneficial for high-efficiency switching applications.
- High Current Capability: With a maximum collector current of 20 A, this transistor is suitable for high-current applications.
- High Speed Switching: The 2SA2210-EPN-1E has a gain bandwidth product of 140 MHz, making it suitable for high-speed switching roles.
- MBIT Process: The adoption of the MBIT process enhances the transistor's speed and current handling capabilities.
- High Operating Temperature: The transistor can operate up to a maximum junction temperature of 150°C, making it robust for various environmental conditions.
Applications
- High-Current Switching: The 2SA2210-EPN-1E is ideal for high-current switching applications due to its low VCE(sat) and high current handling capability.
- Power Management: This transistor can be used in power management circuits where high current and low saturation voltage are required.
- Automotive Systems: Its robustness and high operating temperature make it suitable for use in automotive systems.
- Industrial Control Systems: The transistor can be used in industrial control systems that require high reliability and performance.
Q & A
- What is the maximum collector current of the 2SA2210-EPN-1E transistor?
The maximum collector current is 20 A.
- What is the maximum collector to emitter breakdown voltage of the 2SA2210-EPN-1E?
The maximum collector to emitter breakdown voltage is 50 V).
- What is the gain bandwidth product of the 2SA2210-EPN-1E transistor?
The gain bandwidth product is 140 MHz).
- What is the package type of the 2SA2210-EPN-1E transistor?
The package type is TO-220F-3SG).
- Is the 2SA2210-EPN-1E RoHS compliant?
Yes, the 2SA2210-EPN-1E is RoHS compliant).
- What is the maximum operating temperature of the 2SA2210-EPN-1E transistor?
The maximum operating temperature is 150°C (TJ)).
- What is the minimum DC current gain of the 2SA2210-EPN-1E transistor?
The minimum DC current gain is 150 @ 1 A, 2 V).
- What are some typical applications of the 2SA2210-EPN-1E transistor?
Typical applications include high-current switching, power management, automotive systems, and industrial control systems).
- What process is used in the manufacture of the 2SA2210-EPN-1E transistor?
The transistor is manufactured using the MBIT (MegaBase Insulated Transistor) process).
- What is the maximum power dissipation of the 2SA2210-EPN-1E transistor?
The maximum power dissipation is 2 W).
