Overview
The FDD8424H is a dual N and P-Channel enhancement mode PowerTrench® MOSFET produced by onsemi. This device is designed using Fairchild Semiconductor’s advanced PowerTrench process, which minimizes on-state resistance while maintaining superior switching performance. Although the device is discontinued and not recommended for new designs, it remains a significant component in existing systems.
Key Specifications
| Parameter | Q1 (N-Channel) | Q2 (P-Channel) | Units |
|---|---|---|---|
| VDS (Drain to Source Voltage) | 40 | -40 | V |
| VGS (Gate to Source Voltage) | ±20 | ±20 | V |
| ID (Continuous Drain Current) | 20 | -20 | A |
| rDS(on) at VGS = 10V, ID = 9.0A | 24 | 54 | mΩ |
| rDS(on) at VGS = 4.5V, ID = 7.0A | 30 | 70 | mΩ |
| PD (Power Dissipation) at TC = 25°C | 30 | 35 | W |
| TJ (Operating and Storage Junction Temperature Range) | -55 to +150 | -55 to +150 | °C |
| RθJC (Thermal Resistance, Junction to Case) | 4.1 | 3.5 | °C/W |
Key Features
- Dual N and P-Channel enhancement mode MOSFETs.
- Produced using Fairchild Semiconductor’s advanced PowerTrench process.
- Low on-state resistance (rDS(on)) of 24mΩ for N-Channel and 54mΩ for P-Channel at VGS = 10V.
- Fast switching speed.
- RoHS Compliant.
- High continuous drain current capability (20A for N-Channel, -20A for P-Channel).
- Wide operating and storage junction temperature range (-55°C to +150°C).
Applications
- Inverter applications.
- H-Bridge configurations.
Q & A
- What is the FDD8424H MOSFET?
The FDD8424H is a dual N and P-Channel enhancement mode PowerTrench® MOSFET produced by onsemi.
- What are the key specifications of the FDD8424H?
Key specifications include VDS of 40V for N-Channel and -40V for P-Channel, VGS of ±20V, and rDS(on) of 24mΩ for N-Channel and 54mΩ for P-Channel at VGS = 10V.
- Why is the FDD8424H discontinued?
The FDD8424H is discontinued and not recommended for new designs. Users should contact their onsemi representative for information on alternative components.
- What are the typical applications of the FDD8424H?
The FDD8424H is typically used in inverter applications and H-Bridge configurations.
- What is the thermal resistance of the FDD8424H?
The thermal resistance (RθJC) is 4.1°C/W for the N-Channel and 3.5°C/W for the P-Channel.
- Is the FDD8424H RoHS compliant?
- What is the maximum continuous drain current for the FDD8424H?
The maximum continuous drain current is 20A for the N-Channel and -20A for the P-Channel.
- What is the operating and storage junction temperature range for the FDD8424H?
The operating and storage junction temperature range is -55°C to +150°C.
- How fast is the switching speed of the FDD8424H?
The FDD8424H has fast switching speed, with turn-on delay times of 7ns and turn-off delay times of 17ns for the N-Channel, and similar performance for the P-Channel.
- What package types are available for the FDD8424H?
The FDD8424H is available in TO-252-4L and Dual DPAK 4L packages.
