Overview
The BUK9K18-40E,115 is a dual N-channel MOSFET produced by Nexperia USA Inc. This component is designed using TrenchMOS technology and is packaged in an LFPAK56D (Dual Power-SO8) package. It is qualified to AEC-Q101 standards, making it suitable for automotive and other demanding applications. The MOSFET is characterized by its high efficiency, low on-resistance, and robust thermal performance, making it an ideal choice for various power management and switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 40 V |
| ID (Continuous Drain Current) | 30 A |
| RDS(on) (On-Resistance) | 19.5 mΩ |
| Ptot (Total Power Dissipation) | 38 W |
| VGS(th) (Threshold Voltage) | 1-2 V |
| Tj (Junction Temperature) | -55 to 175°C |
| Package | LFPAK56D (Dual Power-SO8) |
| Compliance | ROHS3 Compliant, AEC-Q101 Qualified |
Key Features
- Dual N-channel MOSFET with low on-resistance (RDS(on)) of 19.5 mΩ.
- High continuous drain current (ID) of 30 A.
- High total power dissipation (Ptot) of 38 W.
- Logic level gate drive for easy interface with microcontrollers and other logic circuits.
- TrenchMOS technology for enhanced performance and efficiency.
- LFPAK56D package for compact and thermally efficient design.
Applications
- Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
- Power management: Ideal for DC-DC converters, power supplies, and other power management circuits.
- Motor control: Used in motor drive circuits for efficient and reliable operation.
- Industrial control: Suitable for industrial control systems requiring high reliability and performance.
- Consumer electronics: Used in various consumer electronic devices requiring efficient power switching.
Q & A
- What is the maximum drain-source voltage (VDS) of the BUK9K18-40E,115?
The maximum drain-source voltage (VDS) is 40 V. - What is the continuous drain current (ID) of this MOSFET?
The continuous drain current (ID) is 30 A. - What is the on-resistance (RDS(on)) of the BUK9K18-40E,115?
The on-resistance (RDS(on)) is 19.5 mΩ. - What package type is used for the BUK9K18-40E,115?
The package type is LFPAK56D (Dual Power-SO8). - Is the BUK9K18-40E,115 ROHS compliant?
Yes, the BUK9K18-40E,115 is ROHS3 compliant. - What is the junction temperature range for this MOSFET?
The junction temperature range is -55 to 175°C. - What technology is used in the BUK9K18-40E,115?
The BUK9K18-40E,115 uses TrenchMOS technology. - Is the BUK9K18-40E,115 qualified for automotive use?
Yes, it is qualified to AEC-Q101 standards. - What are some common applications of the BUK9K18-40E,115?
Common applications include automotive systems, power management, motor control, industrial control, and consumer electronics. - What is the total power dissipation (Ptot) of the BUK9K18-40E,115?
The total power dissipation (Ptot) is 38 W.
