PMPB20ENZ
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Nexperia USA Inc. PMPB20ENZ

Manufacturer No:
PMPB20ENZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 7.2A DFN2020MD-6
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The PMPB20ENZ is a high-performance N-Channel Trench MOSFET produced by Nexperia USA Inc. This device is designed for applications requiring high current handling and low power losses. With its compact DFN2020MD-6 package, it is ideal for space-constrained designs while maintaining robust electrical performance.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)30 V
Continuous Drain Current (Id) at 25°C7.2 A
Power Dissipation (Pd) at Ta1.7 W
Power Dissipation (Pd) at Tc12.5 W
Package TypeDFN2020MD-6

Key Features

  • Low on-state resistance for reduced power losses
  • High current handling capability of 7.2 A at 25°C
  • Compact DFN2020MD-6 surface mount package for space-efficient designs
  • High drain to source voltage rating of 30 V
  • Low Qg for higher efficiency and lower spiking

Applications

The PMPB20ENZ MOSFET is suitable for a variety of applications, including but not limited to:

  • Power management in consumer electronics
  • Automotive systems requiring high reliability and efficiency
  • Industrial control and automation
  • DC-DC converters and power supplies

Q & A

  1. What is the maximum drain to source voltage of the PMPB20ENZ MOSFET?
    The maximum drain to source voltage (Vdss) is 30 V.
  2. What is the continuous drain current rating of the PMPB20ENZ at 25°C?
    The continuous drain current (Id) at 25°C is 7.2 A.
  3. What is the package type of the PMPB20ENZ?
    The package type is DFN2020MD-6.
  4. What is the power dissipation rating of the PMPB20ENZ at ambient temperature (Ta)?
    The power dissipation (Pd) at Ta is 1.7 W.
  5. What is the power dissipation rating of the PMPB20ENZ at case temperature (Tc)?
    The power dissipation (Pd) at Tc is 12.5 W.
  6. What are some typical applications of the PMPB20ENZ MOSFET?
    Typical applications include power management in consumer electronics, automotive systems, industrial control and automation, and DC-DC converters.
  7. Why is the PMPB20ENZ preferred for high-efficiency applications?
    The PMPB20ENZ is preferred due to its low on-state resistance and low Qg, which contribute to higher efficiency and lower spiking.
  8. Is the PMPB20ENZ suitable for high-current applications?
    Yes, the PMPB20ENZ is designed to handle high currents up to 7.2 A at 25°C.
  9. What are the benefits of the compact DFN2020MD-6 package?
    The compact package allows for space-efficient designs while maintaining robust electrical performance.
  10. Where can I find detailed specifications and datasheets for the PMPB20ENZ?
    Detailed specifications and datasheets can be found on the official Nexperia website, as well as through distributors like Digi-Key, Mouser, and Win-Source.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:19.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:435 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.7W (Ta), 12.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020MD-6
Package / Case:6-UDFN Exposed Pad
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In Stock

$0.14
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Same Series
PMPB20EN,115
PMPB20EN,115
MOSFET N-CH 30V 7.2A DFN2020MD-6

Similar Products

Part Number PMPB20ENZ PMPB10ENZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta) 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 19.5mOhm @ 7A, 10V 12mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.8 nC @ 10 V 20.6 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 435 pF @ 10 V 840 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc) 1.8W (Ta), 12.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DFN2020MD-6 DFN2020MD-6
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad

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