PMPB20EN,115
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Nexperia USA Inc. PMPB20EN,115

Manufacturer No:
PMPB20EN,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 7.2A DFN2020MD-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMPB20EN,115 is an N-Channel Trench MOSFET produced by Nexperia USA Inc. This component is housed in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package. It utilizes Trench MOSFET technology, which offers enhanced performance and efficiency. The device is designed for high-power switching applications, providing a maximum continuous drain current of 7.2 A and a maximum drain-source voltage of 30 V. This MOSFET is suitable for a wide range of applications requiring high current handling and low on-resistance.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Channel Type N-Channel
Maximum Continuous Drain Current (Id) @ 25°C 7.2 A
Maximum Drain Source Voltage (Vdss) 30 V
Package Type DFN2020MD-6 (SOT1220)
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance (Rds On) 19.5 mΩ @ 7 A, 10 V
Channel Mode Enhancement
Maximum Gate Threshold Voltage (Vgs(th)) 2 V @ 250 µA
Maximum Gate Source Voltage (Vgs) ±20 V
Gate Charge (Qg) 10.8 nC @ 10 V
Input Capacitance (Ciss) 435 pF @ 10 V
Maximum Power Dissipation 1.7 W (Ta), 12.5 W (Tc)
Operating Temperature Range -55°C to +150°C
Transistor Material Silicon

Key Features

  • High Current Handling: Maximum continuous drain current of 7.2 A.
  • Low On-Resistance: Maximum drain source resistance of 19.5 mΩ @ 7 A, 10 V.
  • Enhanced Performance: Utilizes Trench MOSFET technology for improved efficiency and performance.
  • Compact Package: Leadless medium power DFN2020MD-6 (SOT1220) package for space-efficient designs.
  • Wide Operating Temperature Range: Operates from -55°C to +150°C.
  • Surface Mount Capability: Designed for surface mount applications, facilitating easy integration into PCBs.

Applications

The PMPB20EN,115 N-Channel MOSFET is suitable for various high-power switching applications, including:

  • Power Management: DC-DC converters, power supplies, and voltage regulators.
  • Motor Control: Motor drivers, servo motors, and other high-current motor applications.
  • Automotive Systems: Battery management, power steering, and other automotive power systems.
  • Industrial Automation: Control circuits, power amplifiers, and other industrial automation applications.

Q & A

  1. What is the maximum continuous drain current of the PMPB20EN,115 MOSFET?

    The maximum continuous drain current is 7.2 A at 25°C.

  2. What is the maximum drain-source voltage (Vdss) of this MOSFET?

    The maximum drain-source voltage is 30 V.

  3. What type of package does the PMPB20EN,115 use?

    The component is housed in a DFN2020MD-6 (SOT1220) package.

  4. What is the typical on-resistance (Rds On) of this MOSFET?

    The maximum drain source resistance is 19.5 mΩ @ 7 A, 10 V.

  5. What is the operating temperature range of the PMPB20EN,115?

    The operating temperature range is from -55°C to +150°C.

  6. Is the PMPB20EN,115 RoHS compliant?

    Yes, the PMPB20EN,115 is RoHS compliant.

  7. What is the maximum gate threshold voltage (Vgs(th)) of this MOSFET?

    The maximum gate threshold voltage is 2 V @ 250 µA.

  8. What is the maximum power dissipation of the PMPB20EN,115?

    The maximum power dissipation is 1.7 W (Ta) and 12.5 W (Tc).

  9. What are the typical applications for the PMPB20EN,115?

    Typical applications include power management, motor control, automotive systems, and industrial automation.

  10. How many pins does the PMPB20EN,115 have?

    The component has 6 pins.

  11. What is the material used for the transistor element in the PMPB20EN,115?

    The transistor element is made of silicon.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:19.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:435 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.7W (Ta), 12.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020MD-6
Package / Case:6-UDFN Exposed Pad
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Same Series
PMPB20EN,115
PMPB20EN,115
MOSFET N-CH 30V 7.2A DFN2020MD-6

Similar Products

Part Number PMPB20EN,115 PMPB20ENA115 PMPB20UN,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Active Obsolete
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V - 20 V
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta) - 6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V - 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 19.5mOhm @ 7A, 10V - 25mOhm @ 6.6A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250µA - 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.8 nC @ 10 V - 7.1 nC @ 4.5 V
Vgs (Max) ±20V - ±8V
Input Capacitance (Ciss) (Max) @ Vds 435 pF @ 10 V - 460 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc) - 1.7W (Ta), 12.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount - Surface Mount
Supplier Device Package DFN2020MD-6 - 6-DFN2020MD (2x2)
Package / Case 6-UDFN Exposed Pad - 6-UDFN Exposed Pad

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