PMPB20EN,115
  • Share:

Nexperia USA Inc. PMPB20EN,115

Manufacturer No:
PMPB20EN,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 7.2A DFN2020MD-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMPB20EN,115 is an N-Channel Trench MOSFET produced by Nexperia USA Inc. This component is housed in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package. It utilizes Trench MOSFET technology, which offers enhanced performance and efficiency. The device is designed for high-power switching applications, providing a maximum continuous drain current of 7.2 A and a maximum drain-source voltage of 30 V. This MOSFET is suitable for a wide range of applications requiring high current handling and low on-resistance.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Channel Type N-Channel
Maximum Continuous Drain Current (Id) @ 25°C 7.2 A
Maximum Drain Source Voltage (Vdss) 30 V
Package Type DFN2020MD-6 (SOT1220)
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance (Rds On) 19.5 mΩ @ 7 A, 10 V
Channel Mode Enhancement
Maximum Gate Threshold Voltage (Vgs(th)) 2 V @ 250 µA
Maximum Gate Source Voltage (Vgs) ±20 V
Gate Charge (Qg) 10.8 nC @ 10 V
Input Capacitance (Ciss) 435 pF @ 10 V
Maximum Power Dissipation 1.7 W (Ta), 12.5 W (Tc)
Operating Temperature Range -55°C to +150°C
Transistor Material Silicon

Key Features

  • High Current Handling: Maximum continuous drain current of 7.2 A.
  • Low On-Resistance: Maximum drain source resistance of 19.5 mΩ @ 7 A, 10 V.
  • Enhanced Performance: Utilizes Trench MOSFET technology for improved efficiency and performance.
  • Compact Package: Leadless medium power DFN2020MD-6 (SOT1220) package for space-efficient designs.
  • Wide Operating Temperature Range: Operates from -55°C to +150°C.
  • Surface Mount Capability: Designed for surface mount applications, facilitating easy integration into PCBs.

Applications

The PMPB20EN,115 N-Channel MOSFET is suitable for various high-power switching applications, including:

  • Power Management: DC-DC converters, power supplies, and voltage regulators.
  • Motor Control: Motor drivers, servo motors, and other high-current motor applications.
  • Automotive Systems: Battery management, power steering, and other automotive power systems.
  • Industrial Automation: Control circuits, power amplifiers, and other industrial automation applications.

Q & A

  1. What is the maximum continuous drain current of the PMPB20EN,115 MOSFET?

    The maximum continuous drain current is 7.2 A at 25°C.

  2. What is the maximum drain-source voltage (Vdss) of this MOSFET?

    The maximum drain-source voltage is 30 V.

  3. What type of package does the PMPB20EN,115 use?

    The component is housed in a DFN2020MD-6 (SOT1220) package.

  4. What is the typical on-resistance (Rds On) of this MOSFET?

    The maximum drain source resistance is 19.5 mΩ @ 7 A, 10 V.

  5. What is the operating temperature range of the PMPB20EN,115?

    The operating temperature range is from -55°C to +150°C.

  6. Is the PMPB20EN,115 RoHS compliant?

    Yes, the PMPB20EN,115 is RoHS compliant.

  7. What is the maximum gate threshold voltage (Vgs(th)) of this MOSFET?

    The maximum gate threshold voltage is 2 V @ 250 µA.

  8. What is the maximum power dissipation of the PMPB20EN,115?

    The maximum power dissipation is 1.7 W (Ta) and 12.5 W (Tc).

  9. What are the typical applications for the PMPB20EN,115?

    Typical applications include power management, motor control, automotive systems, and industrial automation.

  10. How many pins does the PMPB20EN,115 have?

    The component has 6 pins.

  11. What is the material used for the transistor element in the PMPB20EN,115?

    The transistor element is made of silicon.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:19.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:435 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.7W (Ta), 12.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN2020MD-6
Package / Case:6-UDFN Exposed Pad
0 Remaining View Similar

In Stock

$0.14
4,084

Please send RFQ , we will respond immediately.

Same Series
PMPB20EN,115
PMPB20EN,115
MOSFET N-CH 30V 7.2A DFN2020MD-6

Similar Products

Part Number PMPB20EN,115 PMPB20ENA115 PMPB20UN,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Active Obsolete
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V - 20 V
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta) - 6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V - 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 19.5mOhm @ 7A, 10V - 25mOhm @ 6.6A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250µA - 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.8 nC @ 10 V - 7.1 nC @ 4.5 V
Vgs (Max) ±20V - ±8V
Input Capacitance (Ciss) (Max) @ Vds 435 pF @ 10 V - 460 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc) - 1.7W (Ta), 12.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount - Surface Mount
Supplier Device Package DFN2020MD-6 - 6-DFN2020MD (2x2)
Package / Case 6-UDFN Exposed Pad - 6-UDFN Exposed Pad

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK

Related Product By Brand

BZA462A,125
BZA462A,125
Nexperia USA Inc.
TVS DIODE 6.2VWM 9VC 6TSOP
BAV70,235
BAV70,235
Nexperia USA Inc.
DIODE ARRAY GP 100V 215MA SOT23
BAS40-07,215
BAS40-07,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT143B
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F
PDZ22B-QZ
PDZ22B-QZ
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BC850CW/ZLX
BC850CW/ZLX
Nexperia USA Inc.
TRANS NPN SOT323
BUK7Y12-40EX
BUK7Y12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 52A LFPAK56
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
BSH111,215
BSH111,215
Nexperia USA Inc.
MOSFET N-CH 55V 335MA TO236AB
74LVC245AD,112
74LVC245AD,112
Nexperia USA Inc.
IC TXRX NON-INVERT 3.6V 20SO
74HC164D,653
74HC164D,653
Nexperia USA Inc.
IC SHIFT REGST 8BIT SI-PO 14SOIC
HEF4094BTTJ
HEF4094BTTJ
Nexperia USA Inc.
IC SHIFT/STORE REGISTER