PMPB20ENA115
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Nexperia USA Inc. PMPB20ENA115

Manufacturer No:
PMPB20ENA115
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMPB20ENA115 is a 30 V N-channel Trench MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's extensive portfolio of MOSFETs, known for their high performance and efficiency. The PMPB20ENA115 is designed to offer fast switching and low on-resistance, making it suitable for a variety of applications requiring high power handling and reliability.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)20 A
RDS(on) (On-Resistance)Typically 2.5 mΩ
Ptot (Total Power Dissipation)Dependent on package and thermal conditions
PackageSOT1220 (2 x 2 x 0.65 mm)
RoHS StatusRoHS compliant

Key Features

  • Trench MOSFET technology for high efficiency and fast switching.
  • Small and leadless ultra thin SMD plastic package (SOT1220) with dimensions of 2 x 2 x 0.65 mm.
  • Exposed drain pad for improved thermal performance.
  • Low on-resistance (RDS(on)) for reduced power losses.
  • High continuous drain current (ID) of 20 A.

Applications

The PMPB20ENA115 is versatile and can be used in various applications, including:

  • Power management in consumer electronics.
  • Automotive systems requiring high power handling and efficiency.
  • Industrial power supplies and motor control systems.
  • Computing and server power management.
  • Mobile and wearable device power management.

Q & A

  1. What is the maximum drain-source voltage of the PMPB20ENA115?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the typical on-resistance of the PMPB20ENA115?
    The typical on-resistance (RDS(on)) is 2.5 mΩ.
  3. What package type is used for the PMPB20ENA115?
    The component is packaged in a SOT1220 package, which is a small and leadless ultra thin SMD plastic package.
  4. Is the PMPB20ENA115 RoHS compliant?
    Yes, the PMPB20ENA115 is RoHS compliant.
  5. What is the maximum continuous drain current of the PMPB20ENA115?
    The maximum continuous drain current (ID) is 20 A.
  6. What are the benefits of using Trench MOSFET technology in the PMPB20ENA115?
    Trench MOSFET technology offers high efficiency and fast switching capabilities.
  7. How does the exposed drain pad improve the performance of the PMPB20ENA115?
    The exposed drain pad enhances thermal performance by providing a better heat dissipation path.
  8. Can the PMPB20ENA115 be used in automotive applications?
    Yes, it can be used in automotive systems due to its high power handling and efficiency.
  9. Where can I find more detailed specifications and datasheets for the PMPB20ENA115?
    You can find detailed specifications and datasheets on the Nexperia website or through authorized distributors.
  10. How do I order samples of the PMPB20ENA115?
    Samples can be ordered through Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Similar Products

Part Number PMPB20ENA115 PMPB20EN,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 30 V
Current - Continuous Drain (Id) @ 25°C - 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs - 19.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id - 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 10.8 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 435 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - 1.7W (Ta), 12.5W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - DFN2020MD-6
Package / Case - 6-UDFN Exposed Pad

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