2N7002V-TP
  • Share:

Micro Commercial Co 2N7002V-TP

Manufacturer No:
2N7002V-TP
Manufacturer:
Micro Commercial Co
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 0.28A SOT-563
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002-TP is a robust N-channel power MOSFET from Micro Commercial Co (MCC), designed for reliable switching applications in harsh environments. This device is part of the 2N7002 series and is known for its high current handling, low input capacitance, and wide operating temperature range. It is particularly suited for industrial control systems, motor drives, and other demanding applications.

Key Specifications

Parameter Min Typ Max Unit
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 115 mA
Rds On - Drain-Source Resistance 7.5 Ohms
Vgs - Gate-Source Voltage -20 +20 V
Vgs th - Gate-Source Threshold Voltage 1 V
Minimum Operating Temperature -55 °C
Maximum Operating Temperature 150 °C
Pd - Power Dissipation 200 mW
Package/Case SOT23-3

Key Features

  • High Current Handling: The 2N7002-TP can handle high currents up to 115 mA, making it suitable for applications requiring significant current flow.
  • Low Input Capacitance: This device features low input capacitance, which reduces switching losses and improves overall system performance.
  • Wide Operating Temperature Range: The 2N7002-TP operates over a wide temperature range from -55°C to +150°C, making it ideal for industrial and harsh environment applications.
  • Fast Switching: The MOSFET is designed for fast switching, which is critical in applications such as motor drives and power supplies.
  • Compact Package: The SOT23-3 package is compact and suitable for surface-mount technology (SMT), making it ideal for space-constrained designs.

Applications

  • Industrial Control Systems: The 2N7002-TP is ideal for industrial control systems that require high current handling and low input capacitance.
  • Motor Drives: This device is suitable for motor drives where high current handling and fast switching times are critical.
  • Power Supplies: The 2N7002-TP can be used in power supplies where low input capacitance and high current handling are important.
  • Aerospace and Defense Systems: The MOSFET is also suitable for use in aerospace and defense systems due to its robust performance and wide operating temperature range.

Q & A

  • Q: What is the maximum current handling of the 2N7002-TP?
    A: The 2N7002-TP can handle currents up to 115 mA.
  • Q: What is the operating temperature range of the 2N7002-TP?
    A: The 2N7002-TP operates over a temperature range from -55°C to +150°C.
  • Q: What is the drain-source breakdown voltage of the 2N7002-TP?
    A: The drain-source breakdown voltage is 60 V.
  • Q: Can the 2N7002-TP be used in aerospace and defense applications?
    A: Yes, the 2N7002-TP is suitable for use in aerospace and defense systems.
  • Q: What is the package type of the 2N7002-TP?
    A: The 2N7002-TP comes in a SOT23-3 package.
  • Q: What are the key features of the 2N7002-TP?
    A: Key features include high current handling, low input capacitance, and a wide operating temperature range.
  • Q: How does the 2N7002-TP connect in a circuit?
    A: The drain pin connects to the positive power supply voltage, the source pin connects to the negative power supply voltage or ground, and the gate pin is used for inputting control signals.
  • Q: Are there any equivalent MOSFETs to the 2N7002-TP?
    A: Yes, alternatives include the STP16NF06L from STMicroelectronics and the FQP50N06L from Fairchild Semiconductor.
  • Q: What is the power dissipation of the 2N7002-TP?
    A: The maximum power dissipation is 200 mW.
  • Q: Is the 2N7002-TP RoHS compliant?
    A: Yes, the 2N7002-TP is RoHS compliant.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:280mA
Rds On (Max) @ Id, Vgs:2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
Power - Max:150mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
0 Remaining View Similar

In Stock

-
195

Please send RFQ , we will respond immediately.

Related Product By Categories

CSD88539NDT
CSD88539NDT
Texas Instruments
MOSFET 2N-CH 60V 15A 8SOIC
PMDPB70XPE,115
PMDPB70XPE,115
Nexperia USA Inc.
MOSFET 2P-CH 20V 3A 6HUSON
NDC7001C
NDC7001C
onsemi
MOSFET N/P-CH 60V SSOT6
FDS9945
FDS9945
onsemi
MOSFET 2N-CH 60V 3.5A 8SOIC
STS10DN3LH5
STS10DN3LH5
STMicroelectronics
MOSFET 2N-CH 30V 10A 8-SOIC
NVMFD5C470NLT1G
NVMFD5C470NLT1G
onsemi
MOSFET 2N-CH 40V 36A S08FL
NVMFD5C470NLWFT1G
NVMFD5C470NLWFT1G
onsemi
MOSFET 2N-CH 40V 36A S08FL
PMZ370UNE,315
PMZ370UNE,315
Nexperia USA Inc.
0.9A, 30V, N CHANNEL, MOSFET, S
NVMD3P03R2G
NVMD3P03R2G
Fairchild Semiconductor
SMALL SIGNAL FIELD-EFFECT TRANSI
NTJD4001NT2G
NTJD4001NT2G
onsemi
MOSFET 2N-CH 30V 0.25A SOT363
FDG6318PZ
FDG6318PZ
onsemi
MOSFET 2P-CH 20V 0.5A SC70-6
2N7002DW-13-G
2N7002DW-13-G
Diodes Incorporated
MOSFET 2N-CH 60V SOT-363

Related Product By Brand

BAS21WTHE3-TP
BAS21WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 200V 200MA SOT323
BAT42W-TP
BAT42W-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOD123
MUR160GP-TP
MUR160GP-TP
Micro Commercial Co
DIODE GEN PURP 600V 1A DO41
BZX84C24-TP
BZX84C24-TP
Micro Commercial Co
DIODE ZENER 24V 350MW SOT23
BZV55C6V2-TP
BZV55C6V2-TP
Micro Commercial Co
DIODE ZENER 6.2V 500MW MINI MELF
BCP56-16-TP
BCP56-16-TP
Micro Commercial Co
TRANS NPN 80V 1A SOT223
BC857BM-TP
BC857BM-TP
Micro Commercial Co
TRANS PNP 45V 0.1A SOT883
BCX51-10-TP
BCX51-10-TP
Micro Commercial Co
TRANS PNP 45V 1A SOT89
MMBT3904M-TP
MMBT3904M-TP
Micro Commercial Co
TRANS NPN 40V 0.2A SOT883
TIP115-BP
TIP115-BP
Micro Commercial Co
TRANS PNP DARL 60V 2A TO220AB
TIP122L-BP
TIP122L-BP
Micro Commercial Co
TRANS NPN 100V 5A TO220AB
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23