BSS84Q-7-F
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Diodes Incorporated BSS84Q-7-F

Manufacturer No:
BSS84Q-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
BSS FAMILY SOT23 T&R 3K
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84Q-7-F is a P-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This component is designed for high-efficiency power management applications and is particularly suited for automotive use due to its compliance with AEC-Q101 standards. It features a low on-state resistance, fast switching speed, and low input/output leakage, making it ideal for various power management and switching functions.

Key Specifications

Fet Type P-Channel
Drain-to-Source Voltage [Vdss] 50V
Drain-Source On Resistance-Max 10Ω @ VGS = -5V
Rated Power Dissipation 300 mW
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount
Maximum Junction Temperature 150°C
RoHS Compliance Yes

Key Features

  • Low On-Resistance: Minimizes power losses during operation.
  • Low Gate Threshold Voltage: Ensures easy switching and control.
  • Low Input Capacitance: Reduces the impact on high-frequency operations.
  • Fast Switching Speed: Ideal for high-efficiency power management applications.
  • Low Input/Output Leakage: Minimizes current leakage and improves overall efficiency.
  • Totally Lead-Free & Fully RoHS Compliant: Meets environmental and regulatory standards.
  • Halogen and Antimony Free: A “Green” device, adhering to environmental safety standards.

Applications

  • General Purpose Interfacing Switch: Suitable for various switching applications.
  • Power Management Functions: Ideal for high-efficiency power management in automotive and industrial systems.
  • Analog Switch: Can be used in analog circuits requiring low on-resistance and fast switching.
  • Automotive Applications: Qualified to AEC-Q101 standards, making it suitable for automotive systems requiring high reliability and specific change control.

Q & A

  1. What is the BSS84Q-7-F MOSFET used for?

    The BSS84Q-7-F is used for high-efficiency power management and switching applications, particularly in automotive systems.

  2. What is the maximum drain-to-source voltage of the BSS84Q-7-F?

    The maximum drain-to-source voltage is 50V.

  3. What is the on-state resistance of the BSS84Q-7-F?

    The on-state resistance is 10Ω at VGS = -5V.

  4. Is the BSS84Q-7-F RoHS compliant?

    Yes, the BSS84Q-7-F is fully RoHS compliant.

  5. What is the package style of the BSS84Q-7-F?

    The package style is SOT-23 (SC-59, TO-236).

  6. What are the key features of the BSS84Q-7-F?

    Key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage.

  7. Where can I find additional datasheets and technical documents for the BSS84Q-7-F?

    Additional datasheets and technical documents can be found on the Diodes Incorporated website or through authorized distributors like Future Electronics, Digi-Key, and Rutronik.

  8. Is the BSS84Q-7-F suitable for automotive applications?

    Yes, it is qualified to AEC-Q101 standards, making it suitable for automotive applications requiring high reliability.

  9. What is the maximum junction temperature of the BSS84Q-7-F?

    The maximum junction temperature is 150°C.

  10. How can I check the stock and lead times for the BSS84Q-7-F?

    Stock availability and lead times can be checked on the comparison pages of authorized distributors such as Future Electronics, Rutronik, and Digi-Key.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:0.59 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:45 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSS84Q-7-F BSS84W-7-F BSS84WQ-7-F BSS84-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 130mA (Ta) 130mA (Ta) 130mA (Ta) 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V 5V 5V
Rds On (Max) @ Id, Vgs 10Ohm @ 100mA, 5V 10Ohm @ 100mA, 5V 10Ohm @ 100mA, 5V 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 0.59 nC @ 10 V - - -
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 45 pF @ 25 V 45 pF @ 25 V 45 pF @ 25 V 45 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 300mW (Ta) 200mW (Ta) 200mW (Ta) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-323 SOT-323 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

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