BSS84WQ-7-F
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Diodes Incorporated BSS84WQ-7-F

Manufacturer No:
BSS84WQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 50V 130MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84WQ-7-F is a P-channel enhancement mode field effect transistor (MOSFET) manufactured by Diodes Incorporated. This component is designed for high efficiency power management and general purpose interfacing and switching applications. It features low on-state resistance, low gate threshold voltage, and fast switching speed, making it ideal for various electronic designs. The MOSFET is packaged in a SOT-323 case, which is lead-free and fully RoHS compliant, ensuring environmental sustainability and reliability.

Key Specifications

Characteristic Symbol Min Typ Max Unit Test Condition
Drain-Source Breakdown Voltage BVDSS -50 -75 - V VGS = 0V, ID = -250µA
Gate Threshold Voltage VGS(TH) -0.8 -1.6 -2.0 V VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance RDS(ON) - 6 10 Ω VGS = -5V, ID = -0.1A
Input Capacitance Ciss - - 45 pF VDS = -25V, VGS = 0V, f = 1.0MHz
Turn-On Delay Time tD(ON) - 10 - ns VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V
Turn-Off Delay Time tD(OFF) - 18 - ns VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V
Operating Temperature Range TJ -55 - 150 °C -
Package Type - - - - SOT-323 -

Key Features

  • Low On-Resistance: The BSS84WQ-7-F features a low RDS(ON) of 6 to 10 Ω, ensuring minimal power loss during operation.
  • Low Gate Threshold Voltage: With a gate threshold voltage of -0.8 to -2.0 V, this MOSFET is easy to drive and control.
  • Low Input Capacitance: The input capacitance is 45 pF, which helps in reducing the gate drive requirements.
  • Fast Switching Speed: The MOSFET has a fast turn-on and turn-off delay time, making it suitable for high-frequency applications.
  • Lead-Free and RoHS Compliant: The component is fully lead-free and RoHS compliant, ensuring environmental sustainability.
  • Halogen and Antimony Free: This 'green' device is free from halogen and antimony, aligning with modern environmental standards.

Applications

  • Power Management Functions: Ideal for high efficiency power management in various electronic systems.
  • General Purpose Interfacing and Switching: Suitable for general purpose interfacing and switching applications due to its fast switching speed and low on-state resistance.
  • Analog Switches: Can be used in analog switch applications where low on-resistance and fast switching are critical.
  • Automotive Applications: Although the BSS84WQ-7-F is not specifically automotive-qualified, an automotive-compliant version (BSS84WQ) is available for such applications.

Q & A

  1. What is the maximum drain-source breakdown voltage of the BSS84WQ-7-F?

    The maximum drain-source breakdown voltage (BVDSS) is -75 V.

  2. What is the typical gate threshold voltage of this MOSFET?

    The typical gate threshold voltage (VGS(TH)) is -1.6 V.

  3. What is the maximum on-state resistance of the BSS84WQ-7-F?

    The maximum on-state resistance (RDS(ON)) is 10 Ω at VGS = -5V and ID = -0.1A.

  4. What is the input capacitance of this MOSFET?

    The input capacitance (Ciss) is 45 pF at VDS = -25V, VGS = 0V, and f = 1.0MHz.

  5. What is the operating temperature range of the BSS84WQ-7-F?

    The operating temperature range is from -55°C to 150°C.

  6. Is the BSS84WQ-7-F RoHS compliant?

    Yes, the BSS84WQ-7-F is fully RoHS compliant and lead-free.

  7. What package type does the BSS84WQ-7-F come in?

    The BSS84WQ-7-F comes in a SOT-323 package.

  8. What are some common applications of the BSS84WQ-7-F?

    Common applications include power management functions, general purpose interfacing and switching, and analog switches.

  9. Is the BSS84WQ-7-F suitable for automotive applications?

    While the BSS84WQ-7-F itself is not automotive-qualified, an automotive-compliant version (BSS84WQ) is available for such applications.

  10. What is the turn-on delay time of the BSS84WQ-7-F?

    The turn-on delay time (tD(ON)) is typically 10 ns.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:45 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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Same Series
BSS84WQ-7-F
BSS84WQ-7-F
MOSFET P-CH 50V 130MA SOT323
BSS84W-7
BSS84W-7
MOSFET P-CH 50V 130MA SOT323

Similar Products

Part Number BSS84WQ-7-F BSS84Q-7-F BSS84W-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 130mA (Ta) 130mA (Ta) 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V 5V
Rds On (Max) @ Id, Vgs 10Ohm @ 100mA, 5V 10Ohm @ 100mA, 5V 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 0.59 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 45 pF @ 25 V 45 pF @ 25 V 45 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 200mW (Ta) 300mW (Ta) 200mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-23-3 SOT-323
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323

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