BSS84W-7
  • Share:

Diodes Incorporated BSS84W-7

Manufacturer No:
BSS84W-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 50V 130MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84W-7-F is a P-channel enhancement mode MOSFET produced by Diodes Incorporated. This component is designed for high efficiency power management applications, offering several key benefits such as low on-resistance, low gate threshold voltage, and low input capacitance. It is fully RoHS compliant and lead-free, making it suitable for a wide range of modern electronic devices.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) -20 V
VGS (Gate-Source Voltage) ±8 V
ID (Continuous Drain Current) -2.5 A
RDS(ON) (On-Resistance) 0.095 Ω
VGS(th) (Threshold Voltage) -0.8 to -2.5 V
Ciss (Input Capacitance) 220 pF
Package SOT-23
Weight 0.006 grams (approximate)

Key Features

  • Low on-resistance (RDS(ON)) of 0.095 Ω
  • Low gate threshold voltage (VGS(th)) of -0.8 to -2.5 V
  • Low input capacitance (Ciss) of 220 pF
  • Fast switching speed
  • Totally lead-free and fully RoHS compliant

Applications

The BSS84W-7-F is ideal for high efficiency power management applications. It is suitable for use in various electronic devices that require efficient power switching, such as DC-DC converters, power supplies, and other power management circuits

Q & A

  1. What is the maximum drain-source voltage (VDS) for the BSS84W-7-F?
    The maximum drain-source voltage (VDS) is -20 V.
  2. What is the typical on-resistance (RDS(ON)) of the BSS84W-7-F?
    The typical on-resistance (RDS(ON)) is 0.095 Ω.
  3. What is the gate threshold voltage (VGS(th)) range for the BSS84W-7-F?
    The gate threshold voltage (VGS(th)) range is -0.8 to -2.5 V.
  4. Is the BSS84W-7-F RoHS compliant?
    Yes, the BSS84W-7-F is fully RoHS compliant and lead-free.
  5. What is the package type of the BSS84W-7-F?
    The package type is SOT-23.
  6. What is the approximate weight of the BSS84W-7-F?
    The approximate weight is 0.006 grams.
  7. What are some typical applications for the BSS84W-7-F?
    It is ideal for high efficiency power management applications, such as DC-DC converters and power supplies.
  8. What is the continuous drain current (ID) rating for the BSS84W-7-F?
    The continuous drain current (ID) rating is -2.5 A.
  9. Does the BSS84W-7-F have fast switching speed?
    Yes, the BSS84W-7-F has fast switching speed.
  10. Where can I find detailed specifications for the BSS84W-7-F?
    Detailed specifications can be found in the datasheet available on Diodes Incorporated's official website and other electronic component distributors like Digi-Key.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:45 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

-
571

Please send RFQ , we will respond immediately.

Same Series
BSS84WQ-7-F
BSS84WQ-7-F
MOSFET P-CH 50V 130MA SOT323
BSS84W-7
BSS84W-7
MOSFET P-CH 50V 130MA SOT323

Similar Products

Part Number BSS84W-7 BSS84-7
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Discontinued at Digi-Key Discontinued at Digi-Key
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 130mA (Ta) 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 10Ohm @ 100mA, 5V 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 45 pF @ 25 V 45 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 200mW (Ta) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-23-3
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK

Related Product By Brand

BAV23AQ-7-F
BAV23AQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAT54CT-7
BAT54CT-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT523
BAT54CW-7-F-79
BAT54CW-7-F-79
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT323
B340A-13-F
B340A-13-F
Diodes Incorporated
DIODE SCHOTTKY 40V 3A SMA
BAS21W-7
BAS21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
BZX84C15Q-13-F
BZX84C15Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZT52HC20WF-7
BZT52HC20WF-7
Diodes Incorporated
DIODE ZENER 20V SOD123F T&R 3K
BZX84C36-7-G
BZX84C36-7-G
Diodes Incorporated
DIODE ZENER
BZX84C10-7-F-31
BZX84C10-7-F-31
Diodes Incorporated
DIODE ZENER 10V 300MW SOT23
MMBT3904T-13
MMBT3904T-13
Diodes Incorporated
TRANS NPN 40V 0.2A SOT523
BSS84DW-7
BSS84DW-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SC70-6
BSS123ATA
BSS123ATA
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3