2N7002W-G
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Comchip Technology 2N7002W-G

Manufacturer No:
2N7002W-G
Manufacturer:
Comchip Technology
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 0.25A SOT323
Delivery:
Payment:
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Product Introduction

Overview

The 2N7002W-G is a small signal, N-channel enhancement mode field effect transistor (FET) produced by Comchip Technology, although the datasheet and specifications are widely available from manufacturers like Onsemi and Diodes Incorporated. This MOSFET is designed for high-efficiency power management applications, offering low on-state resistance and fast switching speeds.

Key Specifications

Characteristic Symbol Value Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 0.115 A
Drain-Source On Resistance RDS(ON) 7.5 Ω @ VGS = 5V
Package Type SOT-323
Operating Temperature Range TJ -55 to +150 °C
Total Power Dissipation PD 200 mW
Thermal Resistance, Junction to Ambient RθJA 625 °C/W

Key Features

  • Low on-state resistance (RDS(ON))
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • Ultra-small surface mount package (SOT-323)
  • ESD protected
  • Pb-free, halogen-free, and RoHS compliant

Applications

  • Low side load switch
  • Level shift circuits
  • DC-DC converters
  • Portable applications (e.g., DSC, PDA)
  • Motor control
  • Power management functions

Q & A

  1. What is the maximum drain-source voltage of the 2N7002W-G?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the continuous drain current rating of the 2N7002W-G?

    The continuous drain current (ID) is 0.115 A.

  3. What is the typical on-state resistance of the 2N7002W-G?

    The typical on-state resistance (RDS(ON)) is 7.5 Ω at VGS = 5 V.

  4. What is the operating temperature range of the 2N7002W-G?

    The operating temperature range is -55°C to +150°C.

  5. Is the 2N7002W-G RoHS compliant?
  6. What are some common applications of the 2N7002W-G?
  7. What is the package type of the 2N7002W-G?

    The package type is SOT-323.

  8. Does the 2N7002W-G have ESD protection?
  9. What is the thermal resistance, junction to ambient, of the 2N7002W-G?

    The thermal resistance, junction to ambient (RθJA), is 625 °C/W.

  10. What is the maximum total power dissipation of the 2N7002W-G?

    The maximum total power dissipation (PD) is 200 mW.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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Similar Products

Part Number 2N7002W-G 2N7002W-7
Manufacturer Comchip Technology Diodes Incorporated
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 200mW (Ta) 200mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323
Package / Case SC-70, SOT-323 SC-70, SOT-323

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