1N5819-G
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Comchip Technology 1N5819-G

Manufacturer No:
1N5819-G
Manufacturer:
Comchip Technology
Package:
Cut Tape (CT)
Description:
DIODE SCHOTTKY 40V 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5819-G, produced by Comchip Technology, is a Schottky barrier diode designed for high-efficiency rectification in various electronic applications. This diode is known for its low forward voltage drop and fast recovery time, making it suitable for use in power supplies, switching circuits, and other high-frequency applications.

Key Specifications

ParameterValue
Voltage - DC Reverse (Vr) (Max)40V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If550mV @ 1A
PackageDO-41
Reverse Recovery Time (trr)< 500ns, > 200mA (Io)
Operating Junction Temperature+150°C
RoHS ComplianceNot Compliant (varies by distributor)

Key Features

  • Low forward voltage drop (Vf) of 550mV at 1A, reducing power losses.
  • Fast recovery time of less than 500ns, making it suitable for high-frequency applications.
  • High reverse voltage rating of 40V, providing robust protection against reverse voltage.
  • Through-hole DO-41 package, easy to integrate into various circuit designs.
  • Operating junction temperature up to +150°C, ensuring reliability in demanding environments.

Applications

The 1N5819-G Schottky diode is widely used in various applications, including:

  • Power supplies and switching regulators due to its low forward voltage drop and fast recovery time.
  • High-frequency circuits such as RF amplifiers and oscillators.
  • Rectifier circuits in audio and video equipment.
  • Automotive and industrial power systems requiring high reliability and efficiency.

Q & A

  1. What is the maximum reverse voltage rating of the 1N5819-G diode?
    The maximum reverse voltage rating is 40V.
  2. What is the typical forward voltage drop (Vf) of the 1N5819-G diode?
    The typical forward voltage drop is 550mV at 1A.
  3. What is the package type of the 1N5819-G diode?
    The package type is DO-41.
  4. Is the 1N5819-G diode RoHS compliant?
    It varies by distributor, but generally, it is not RoHS compliant.
  5. What is the maximum operating junction temperature of the 1N5819-G diode?
    The maximum operating junction temperature is +150°C.
  6. What are some common applications of the 1N5819-G diode?
    Common applications include power supplies, high-frequency circuits, rectifier circuits, and automotive and industrial power systems.
  7. What is the average rectified current (Io) rating of the 1N5819-G diode?
    The average rectified current rating is 1A.
  8. How does the 1N5819-G diode compare to other Schottky diodes in terms of recovery time?
    The 1N5819-G has a fast recovery time of less than 500ns, which is comparable to or better than many other Schottky diodes.
  9. Can the 1N5819-G diode be used in high-frequency applications?
    Yes, it is suitable for high-frequency applications due to its fast recovery time and low forward voltage drop.
  10. Where can I purchase the 1N5819-G diode?
    You can purchase the 1N5819-G diode from various electronic component distributors such as Digi-Key, RS Components, and Heisener.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:600 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:1 mA @ 40 V
Capacitance @ Vr, F:110pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number 1N5819-G 1N5819G 1N5819-T 1N5819-1 1N5819-B
Manufacturer Comchip Technology onsemi Diodes Incorporated Microchip Technology Diodes Incorporated
Product Status Active Active Active Active Obsolete
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V 40 V 45 V 40 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 600 mV @ 1 A 600 mV @ 1 A 600 mV @ 1 A 340 mV @ 1 A 600 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - -
Current - Reverse Leakage @ Vr 1 mA @ 40 V 1 mA @ 40 V 1 mA @ 40 V 50 µA @ 45 V 1 mA @ 40 V
Capacitance @ Vr, F 110pF @ 4V, 1MHz - 110pF @ 4V, 1MHz 70pF @ 5V, 1MHz 110pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 Axial DO-41 DO-204AL (DO-41) DO-41
Operating Temperature - Junction -55°C ~ 150°C -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C

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