1N5819G
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onsemi 1N5819G

Manufacturer No:
1N5819G
Manufacturer:
onsemi
Package:
Bulk
Description:
DIODE SCHOTTKY 40V 1A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5819G Schottky Rectifier, produced by onsemi, is a high-performance Schottky barrier diode designed for use in low-voltage, high-frequency applications. This diode employs the Schottky Barrier principle in a large area metal-to-silicon power diode, featuring chrome barrier metal, epitaxial construction with oxide passivation, and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity protection diodes.

Key Specifications

Characteristic Symbol 1N5819 Unit
Peak Repetitive Reverse Voltage VRRM 40 V
Maximum RMS Voltage VRMS 28 V
Maximum DC Blocking Voltage VDC 40 V
Average Rectified Output Current IO 1.0 A A
Non-Repetitive Peak Forward Surge Current IFSM 25 A A
Forward Voltage @ IF = 1.0A VFM 0.60 V V
Peak Reverse Leakage Current @ TA = +25°C IRM 1.0 mA mA
Typical Total Capacitance CT 110 pF pF
Thermal Resistance Junction to Lead RθJL 15 °C/W °C/W
Thermal Resistance Junction to Ambient RθJA 50 °C/W °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +125 °C °C
Package DO-41 (DO-204AL)
Weight Approx. 0.3 grams grams

Key Features

  • Guard Ring Die Construction for transient protection
  • Low-power loss, high efficiency
  • High-surge capability
  • High-current capability and low-forward voltage drop
  • Extremely fast switching
  • Low forward voltage drop (VFM = 0.60 V @ IF = 1.0A)
  • High frequency operation
  • Lead-free finish; RoHS compliant
  • Molded plastic package with UL 94 V-0 flammability rating
  • Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102

Applications

  • Low-voltage, high-frequency inverters
  • Free-wheeling diodes
  • Polarity protection diodes
  • DC/DC converters
  • Automotive applications requiring specific change control (e.g., AEC-Q100/101/104/200 qualified)

Q & A

  1. What is the peak repetitive reverse voltage of the 1N5819G?

    The peak repetitive reverse voltage (VRRM) of the 1N5819G is 40 V.

  2. What is the average rectified output current of the 1N5819G?

    The average rectified output current (IO) of the 1N5819G is 1.0 A.

  3. What is the forward voltage drop at 1.0 A for the 1N5819G?

    The forward voltage drop (VFM) at 1.0 A for the 1N5819G is 0.60 V.

  4. Is the 1N5819G RoHS compliant?

    Yes, the 1N5819G is lead-free and RoHS compliant.

  5. What is the operating temperature range of the 1N5819G?

    The operating and storage temperature range of the 1N5819G is -65 to +125 °C.

  6. What are the typical applications of the 1N5819G?

    The 1N5819G is typically used in low-voltage, high-frequency inverters, free-wheeling diodes, polarity protection diodes, and DC/DC converters.

  7. What is the package type of the 1N5819G?

    The 1N5819G comes in a DO-41 (DO-204AL) package.

  8. Is the 1N5819G suitable for automotive applications?

    Yes, the 1N5819G can be used in automotive applications requiring specific change control, such as those qualified to AEC-Q100/101/104/200 standards.

  9. What is the thermal resistance junction to ambient of the 1N5819G?

    The thermal resistance junction to ambient (RθJA) of the 1N5819G is 50 °C/W.

  10. How much does the 1N5819G weigh?

    The 1N5819G weighs approximately 0.3 grams.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:600 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:1 mA @ 40 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:Axial
Operating Temperature - Junction:-65°C ~ 125°C
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Similar Products

Part Number 1N5819G 1N5819W 1N5819H 1N5817G 1N5818G 1N5819 1N5819-G
Manufacturer onsemi SMC Diode Solutions Taiwan Semiconductor Corporation onsemi onsemi STMicroelectronics Comchip Technology
Product Status Active Active Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V 40 V 20 V 30 V 40 V 40 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 600 mV @ 1 A 500 mV @ 1 A 600 mV @ 1 A 450 mV @ 1 A 550 mV @ 1 A 550 mV @ 1 A 600 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - - -
Current - Reverse Leakage @ Vr 1 mA @ 40 V 100 µA @ 40 V 1 mA @ 40 V 1 mA @ 20 V 1 mA @ 30 V 500 µA @ 40 V 1 mA @ 40 V
Capacitance @ Vr, F - 110pF @ 4V, 1MHz 55pF @ 4V, 1MHz - - - 110pF @ 4V, 1MHz
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial SOD-123F DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package Axial SOD-123FL DO-204AL (DO-41) Axial Axial DO-41 DO-41
Operating Temperature - Junction -65°C ~ 125°C -55°C ~ 150°C -55°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C 150°C (Max) -55°C ~ 150°C

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