BAS16-G
  • Share:

Comchip Technology BAS16-G

Manufacturer No:
BAS16-G
Manufacturer:
Comchip Technology
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16-G is a small signal, fast switching diode produced by Comchip Technology. This diode is designed for high-speed switching applications and is packaged in a SOT-23-3 surface mount configuration. It is known for its ultra-fast switching speed, high conductance, and robust thermal performance, making it suitable for a variety of electronic circuits.

Key Specifications

Parameter Value Unit
Non-repetitive peak reverse voltage (VRM) 100 V
Repetitive peak reverse voltage (VRRM) / Working peak reverse voltage (VRWM) / DC blocking voltage (VR) 75 V
Peak forward surge current (IFSM) at tp = 1 s 1 A
Peak forward surge current (IFSM) at tp = 1 μs 2 A
Average forward current (IF(AV)) 250 mA
Forward current (IF) 350 mA
Power dissipation on FR-4 board 270 mW
Power dissipation with infinite heat sink 390 mW
Thermal resistance junction to ambient air (RthJA) 460 K/W
Thermal resistance junction to lead (RthJL) 320 K/W
Junction temperature (Tj) 125 °C
Storage temperature range (Tstg) -65 to +150 °C
Operating temperature range (Top) -55 to +150 °C
Forward voltage (VF) at IF = 1 mA 0.715 V
Forward voltage (VF) at IF = 10 mA 0.855 V
Reverse current (IR) at VR = 75 V 1 μA
Capacitance at VR = 0 V, f = 1 MHz 2 pF

Key Features

  • Silicon Epitaxial Planar Diode: Ensures high reliability and performance.
  • Ultra Fast Switching Speed: ≤ 4 ns, ideal for high-speed applications.
  • Surface Mount Package: SOT-23-3, suitable for automatic insertion and compact designs.
  • High Conductance: Efficient current handling capabilities.
  • AEC-Q101 Qualified: Available upon request, ensuring automotive-grade reliability.
  • Moisture Sensitivity Level (MSL) 1: Minimal risk of moisture-related failures.
  • Wide Operating Temperature Range: -55°C to +150°C, suitable for various environmental conditions.

Applications

  • High-Speed Switching Circuits: Ideal for applications requiring fast switching times.
  • Automotive Electronics: AEC-Q101 qualified versions available for automotive applications.
  • Consumer Electronics: Suitable for use in a wide range of consumer electronic devices.
  • Industrial Control Systems: Reliable performance in industrial control and automation systems.
  • Communication Equipment: Used in various communication devices due to its high-speed switching capabilities.

Q & A

  1. What is the maximum reverse voltage rating of the BAS16-G diode?

    The maximum reverse voltage rating is 75 V.

  2. What is the typical forward voltage drop at 1 mA for the BAS16-G?

    The typical forward voltage drop at 1 mA is 0.715 V.

  3. What is the maximum average forward current for the BAS16-G?

    The maximum average forward current is 250 mA.

  4. What is the thermal resistance junction to ambient air for the BAS16-G on an FR-4 board?

    The thermal resistance junction to ambient air is 460 K/W.

  5. Is the BAS16-G AEC-Q101 qualified?

    Yes, AEC-Q101 qualified versions are available upon request.

  6. What is the storage temperature range for the BAS16-G?

    The storage temperature range is -65°C to +150°C.

  7. What is the package type of the BAS16-G?

    The package type is SOT-23-3.

  8. What is the maximum junction temperature for the BAS16-G?

    The maximum junction temperature is 125°C.

  9. What is the typical reverse leakage current at 75 V for the BAS16-G?

    The typical reverse leakage current at 75 V is 1 μA.

  10. What is the capacitance at 0 V and 1 MHz for the BAS16-G?

    The capacitance at 0 V and 1 MHz is 2 pF.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.04
2,769

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAS16-G BAS16-7
Manufacturer Comchip Technology Diodes Incorporated
Product Status Active Discontinued at Digi-Key
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V
Current - Average Rectified (Io) 200mA (DC) 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 6 ns 4 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

PMEG2010EA,115
PMEG2010EA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
STTH3002G-TR
STTH3002G-TR
STMicroelectronics
DIODE GEN PURP 200V 30A D2PAK
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

1.5KE120A-G
1.5KE120A-G
Comchip Technology
TVS DIODE 102VWM 165VC DO201
5KP43A-G
5KP43A-G
Comchip Technology
TVS DIODE 43VWM 69.4VC R6
BAT54AT-HF
BAT54AT-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23
1N4148W-HF
1N4148W-HF
Comchip Technology
DIODE SWITCHING 100V 150MA 500MW
1N4148-G
1N4148-G
Comchip Technology
DIODE GEN PURP 75V 150MA DO35
BZX84C20CC-HF
BZX84C20CC-HF
Comchip Technology
DIODE ZENER 20V 350MW SOT23
BZX84C15CC-HF
BZX84C15CC-HF
Comchip Technology
DIODE ZENER 15V 350MW SOT23
MMBT3904-HF
MMBT3904-HF
Comchip Technology
TRANS NPN 40V 0.2A SOT23-3
BC857CW-G
BC857CW-G
Comchip Technology
TRANS PNP 45V 0.1A SOT323
BC857BW-G
BC857BW-G
Comchip Technology
TRANS PNP 45V 0.1A SOT323
2N7002-HF
2N7002-HF
Comchip Technology
MOSFET N-CH 60V 250MA SOT23
2N7002W-G
2N7002W-G
Comchip Technology
MOSFET N-CH 60V 0.25A SOT323