BAS16-G
  • Share:

Comchip Technology BAS16-G

Manufacturer No:
BAS16-G
Manufacturer:
Comchip Technology
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 75V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16-G is a small signal, fast switching diode produced by Comchip Technology. This diode is designed for high-speed switching applications and is packaged in a SOT-23-3 surface mount configuration. It is known for its ultra-fast switching speed, high conductance, and robust thermal performance, making it suitable for a variety of electronic circuits.

Key Specifications

Parameter Value Unit
Non-repetitive peak reverse voltage (VRM) 100 V
Repetitive peak reverse voltage (VRRM) / Working peak reverse voltage (VRWM) / DC blocking voltage (VR) 75 V
Peak forward surge current (IFSM) at tp = 1 s 1 A
Peak forward surge current (IFSM) at tp = 1 μs 2 A
Average forward current (IF(AV)) 250 mA
Forward current (IF) 350 mA
Power dissipation on FR-4 board 270 mW
Power dissipation with infinite heat sink 390 mW
Thermal resistance junction to ambient air (RthJA) 460 K/W
Thermal resistance junction to lead (RthJL) 320 K/W
Junction temperature (Tj) 125 °C
Storage temperature range (Tstg) -65 to +150 °C
Operating temperature range (Top) -55 to +150 °C
Forward voltage (VF) at IF = 1 mA 0.715 V
Forward voltage (VF) at IF = 10 mA 0.855 V
Reverse current (IR) at VR = 75 V 1 μA
Capacitance at VR = 0 V, f = 1 MHz 2 pF

Key Features

  • Silicon Epitaxial Planar Diode: Ensures high reliability and performance.
  • Ultra Fast Switching Speed: ≤ 4 ns, ideal for high-speed applications.
  • Surface Mount Package: SOT-23-3, suitable for automatic insertion and compact designs.
  • High Conductance: Efficient current handling capabilities.
  • AEC-Q101 Qualified: Available upon request, ensuring automotive-grade reliability.
  • Moisture Sensitivity Level (MSL) 1: Minimal risk of moisture-related failures.
  • Wide Operating Temperature Range: -55°C to +150°C, suitable for various environmental conditions.

Applications

  • High-Speed Switching Circuits: Ideal for applications requiring fast switching times.
  • Automotive Electronics: AEC-Q101 qualified versions available for automotive applications.
  • Consumer Electronics: Suitable for use in a wide range of consumer electronic devices.
  • Industrial Control Systems: Reliable performance in industrial control and automation systems.
  • Communication Equipment: Used in various communication devices due to its high-speed switching capabilities.

Q & A

  1. What is the maximum reverse voltage rating of the BAS16-G diode?

    The maximum reverse voltage rating is 75 V.

  2. What is the typical forward voltage drop at 1 mA for the BAS16-G?

    The typical forward voltage drop at 1 mA is 0.715 V.

  3. What is the maximum average forward current for the BAS16-G?

    The maximum average forward current is 250 mA.

  4. What is the thermal resistance junction to ambient air for the BAS16-G on an FR-4 board?

    The thermal resistance junction to ambient air is 460 K/W.

  5. Is the BAS16-G AEC-Q101 qualified?

    Yes, AEC-Q101 qualified versions are available upon request.

  6. What is the storage temperature range for the BAS16-G?

    The storage temperature range is -65°C to +150°C.

  7. What is the package type of the BAS16-G?

    The package type is SOT-23-3.

  8. What is the maximum junction temperature for the BAS16-G?

    The maximum junction temperature is 125°C.

  9. What is the typical reverse leakage current at 75 V for the BAS16-G?

    The typical reverse leakage current at 75 V is 1 μA.

  10. What is the capacitance at 0 V and 1 MHz for the BAS16-G?

    The capacitance at 0 V and 1 MHz is 2 pF.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):6 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.04
2,769

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAS16-G BAS16-7
Manufacturer Comchip Technology Diodes Incorporated
Product Status Active Discontinued at Digi-Key
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 75 V
Current - Average Rectified (Io) 200mA (DC) 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 6 ns 4 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3
Operating Temperature - Junction -55°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

BAT43W_R1_00001
BAT43W_R1_00001
Panjit International Inc.
SOD-123, SKY
MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
BAS16H,115
BAS16H,115
Nexperia USA Inc.
DIODE GP 100V 215MA SOD123F
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
STPS8H100DEE-TR
STPS8H100DEE-TR
STMicroelectronics
DIODE SCHOTTKY 100V 8A POWERFLAT
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
1N4004GP-M3/54
1N4004GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL

Related Product By Brand

BAV99-G
BAV99-G
Comchip Technology
DIODE ARRAY GP 70V 215MA SOT23
BAV99-HF
BAV99-HF
Comchip Technology
DIODE SWITCHING DUAL SERIAL 70V
BAS21S-HF
BAS21S-HF
Comchip Technology
DIODE SWITCHING DUAL SERIAL 250V
BAT54A-HF
BAT54A-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23
MBR20100CT-G
MBR20100CT-G
Comchip Technology
DIODE ARRAY SCHOTTKY 100V TO220
BAT54CT-HF
BAT54CT-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23
RB751V-40-HF
RB751V-40-HF
Comchip Technology
DIODE SCHOTTKY 30V 30MA SOD323
BZX84C30CC-HF
BZX84C30CC-HF
Comchip Technology
DIODE ZENER 30V 350MW SOT23
BZX84C11CC-HF
BZX84C11CC-HF
Comchip Technology
DIODE ZENER 11V 350MW SOT23
BZX84C4V3CC-HF
BZX84C4V3CC-HF
Comchip Technology
DIODE ZENER 4.3V 350MW SOT23
MMBT3904-G
MMBT3904-G
Comchip Technology
TRANS NPN 40V 0.2A SOT23-3
BC857AW-G
BC857AW-G
Comchip Technology
TRANS PNP 45V 0.1A SOT323