1N4007T-G
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Comchip Technology 1N4007T-G

Manufacturer No:
1N4007T-G
Manufacturer:
Comchip Technology
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 1KV 1A DO41
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The 1N4007T-G is a general-purpose silicon rectifier diode produced by Comchip Technology. This diode is part of the 1N4000 series, known for its reliability and versatility in various electronic applications. It is designed to handle moderate to high current and voltage levels, making it suitable for a wide range of uses, from power supplies to consumer electronics.

Key Specifications

ParameterValue
Part Number1N4007T-G
ManufacturerComchip Technology
Maximum Average Rectified Current1 A
Peak Reverse Voltage1000 V
Forward Voltage DropTypically 1.1 V at 1 A
Reverse CurrentTypically 5 μA at 1000 V
Operating Temperature Range-55°C to +150°C
Package TypeDO-41 (T)

Key Features

  • High peak reverse voltage (1000 V) for robust protection against voltage spikes.
  • High maximum average rectified current (1 A) suitable for various power applications.
  • Low forward voltage drop (typically 1.1 V at 1 A) for efficient power conversion.
  • Wide operating temperature range (-55°C to +150°C) for reliability in diverse environments.
  • DO-41 package type, which is compact and easy to integrate into various circuit designs.

Applications

  • Power supplies and DC-DC converters.
  • Consumer electronics such as TVs, audio equipment, and appliances.
  • Automotive systems, including battery charging and voltage regulation.
  • Industrial control systems and motor drives.
  • General-purpose rectification in electronic circuits.

Q & A

  1. What is the maximum average rectified current of the 1N4007T-G diode?
    The maximum average rectified current is 1 A.
  2. What is the peak reverse voltage of the 1N4007T-G diode?
    The peak reverse voltage is 1000 V.
  3. What is the typical forward voltage drop of the 1N4007T-G diode?
    The typical forward voltage drop is 1.1 V at 1 A.
  4. What is the operating temperature range of the 1N4007T-G diode?
    The operating temperature range is -55°C to +150°C.
  5. What package type does the 1N4007T-G diode come in?
    The 1N4007T-G diode comes in a DO-41 (T) package.
  6. Is the 1N4007T-G diode suitable for high-temperature applications?
    Yes, it is suitable for high-temperature applications up to 150°C.
  7. Can the 1N4007T-G diode be used in automotive systems?
    Yes, it can be used in automotive systems for battery charging and voltage regulation.
  8. What are some common applications of the 1N4007T-G diode?
    Common applications include power supplies, consumer electronics, and industrial control systems.
  9. Is the 1N4007T-G diode RoHS compliant?
    Yes, Comchip Technology ensures that their products, including the 1N4007T-G, are RoHS compliant.
  10. Where can I find detailed specifications and datasheets for the 1N4007T-G diode?
    Detailed specifications and datasheets can be found on the Comchip Technology website or through authorized distributors like Digi-Key, Mouser, etc.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number 1N4007T-G 1N4006T-G 1N4007-G 1N4007B-G
Manufacturer Comchip Technology Comchip Technology Comchip Technology Comchip Technology
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 800 V 1000 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V 5 µA @ 1000 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

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