1N4004-G
  • Share:

Comchip Technology 1N4004-G

Manufacturer No:
1N4004-G
Manufacturer:
Comchip Technology
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 400V 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4004-G is a general-purpose rectifier diode manufactured by Comchip Technology. This diode is part of the 1N4000 series, known for its reliability and versatility in various electrical applications. It features a high reverse voltage rating and a moderate forward current capacity, making it suitable for a wide range of uses, from power supplies to rectification circuits.

Key Specifications

Parameter Value Unit
Repetitive Reverse Voltage (VRRM) 400 V
Average Forward Current (IF(AV)) 1 A
Peak Forward Surge Current (IFSM) 30 A
Forward Voltage Drop (VF) 1.1 V
Reverse Current (IR) 5 μA
Operating Temperature Range -65 to 150 °C
Package Type DO-41
RoHS Compliance Yes

Key Features

  • High Reverse Voltage Rating: The 1N4004-G can withstand a repetitive reverse voltage of up to 400V, making it suitable for applications requiring high voltage rectification.
  • Moderate Forward Current: With an average forward current of 1A, this diode is ideal for a variety of power supply and rectification applications.
  • Low Forward Voltage Drop: The diode has a forward voltage drop of 1.1V, which minimizes power loss during operation.
  • High Peak Forward Surge Current: It can handle peak forward surge currents up to 30A, providing robustness against transient conditions.
  • Wide Operating Temperature Range: The diode operates within a temperature range of -65°C to 150°C, ensuring reliability in diverse environmental conditions.
  • RoHS Compliance: The 1N4004-G is RoHS compliant, making it suitable for use in environmentally friendly designs.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Rectification Circuits: Employed in various rectification circuits due to its high reverse voltage and moderate forward current capabilities.
  • Voltage Regulation: Can be used in voltage regulation circuits to stabilize output voltages.
  • Overvoltage Protection: Utilized in overvoltage protection circuits to safeguard against voltage spikes.
  • General Electronics: Suitable for use in a wide range of general electronic applications requiring rectification or voltage regulation.

Q & A

  1. What is the repetitive reverse voltage rating of the 1N4004-G diode?

    The repetitive reverse voltage rating of the 1N4004-G diode is 400V.

  2. What is the average forward current capacity of the 1N4004-G?

    The average forward current capacity of the 1N4004-G is 1A.

  3. What is the forward voltage drop of the 1N4004-G diode?

    The forward voltage drop of the 1N4004-G diode is 1.1V.

  4. What is the peak forward surge current rating of the 1N4004-G?

    The peak forward surge current rating of the 1N4004-G is 30A.

  5. What is the operating temperature range of the 1N4004-G diode?

    The operating temperature range of the 1N4004-G diode is -65°C to 150°C.

  6. Is the 1N4004-G diode RoHS compliant?

    Yes, the 1N4004-G diode is RoHS compliant.

  7. What package type does the 1N4004-G diode come in?

    The 1N4004-G diode comes in a DO-41 package.

  8. What are some common applications of the 1N4004-G diode?

    The 1N4004-G diode is commonly used in power supplies, rectification circuits, voltage regulation, overvoltage protection, and general electronic applications.

  9. Can the 1N4004-G diode handle high voltage spikes?

    Yes, the 1N4004-G diode can handle high voltage spikes due to its high repetitive reverse voltage rating.

  10. Is the 1N4004-G suitable for high-frequency applications?

    The 1N4004-G is generally not recommended for high-frequency applications due to its standard recovery characteristics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 400 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.20
4,587

Please send RFQ , we will respond immediately.

Same Series
1N4007B-G
1N4007B-G
DIODE GEN PURP 1KV 1A DO41
1N4002B-G
1N4002B-G
DIODE GEN PURP 100V 1A DO41
1N4004-G
1N4004-G
DIODE GEN PURP 400V 1A DO41
1N4002T-G
1N4002T-G
DIODE GEN PURP 100V 1A DO41
1N4003T-G
1N4003T-G
DIODE GEN PURP 200V 1A DO41
1N4005T-G
1N4005T-G
DIODE GEN PURP 600V 1A DO41
1N4006T-G
1N4006T-G
DIODE GEN PURP 800V 1A DO41
1N4003B-G
1N4003B-G
DIODE GEN PURP 200V 1A DO41
1N4005B-G
1N4005B-G
DIODE GEN PURP 600V 1A DO41
1N4006B-G
1N4006B-G
DIODE GEN PURP 800V 1A DO41

Similar Products

Part Number 1N4004-G 1N4004-T 1N4004B-G 1N4004G 1N4005-G 1N4002-G 1N4003-G 1N4004-F
Manufacturer Comchip Technology Diodes Incorporated Comchip Technology onsemi Comchip Technology Comchip Technology Comchip Technology Rectron USA
Product Status Active Not For New Designs Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 400 V 400 V 400 V 600 V 100 V 200 V -
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 400 V 5 µA @ 400 V 5 µA @ 400 V 10 µA @ 400 V 5 µA @ 600 V 5 µA @ 100 V 5 µA @ 200 V 200 nA @ 1000 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz - 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 Axial DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction -55°C ~ 150°C -65°C ~ 150°C -55°C ~ 150°C -65°C ~ 175°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
NRVBS360T3G
NRVBS360T3G
onsemi
DIODE SCHOTTKY 60V 3A SMC
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
1N5711UBD
1N5711UBD
Microchip Technology
SCHOTTKY BARRIER DIODE CERAMIC S
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
MUR460 B0G
MUR460 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD

Related Product By Brand

SMBJ5.0CA-HF
SMBJ5.0CA-HF
Comchip Technology
TVS DIODE 5VWM 9.2VC DO214AA
BAT54S-HF
BAT54S-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23
BAT54A-G
BAT54A-G
Comchip Technology
DIODE ARRAY SCHOTTKY 30V SOT23
MBR10100CT-HF
MBR10100CT-HF
Comchip Technology
DIODE ARRAY SCHOTTKY TO220AB
RB751V-40
RB751V-40
Comchip Technology
DIODE SCHOTTKY 30V 30MA SOD323
BZX84C2V7CC-HF
BZX84C2V7CC-HF
Comchip Technology
DIODE ZENER 2.7V 350MW SOT23
BZX84C10CC-HF
BZX84C10CC-HF
Comchip Technology
DIODE ZENER 10V 350MW SOT23
BZX84C43CC-HF
BZX84C43CC-HF
Comchip Technology
DIODE ZENER 43V 350MW SOT23
BZX84C3V6CC-HF
BZX84C3V6CC-HF
Comchip Technology
DIODE ZENER 3.6V 350MW SOT23
BZX84C15CC-HF
BZX84C15CC-HF
Comchip Technology
DIODE ZENER 15V 350MW SOT23
MMBT2222A-G
MMBT2222A-G
Comchip Technology
TRANS NPN 40V 0.6A SOT23-3
BC856BW-G
BC856BW-G
Comchip Technology
TRANS PNP 65V 0.1A SOT323