1N4007B-G
  • Share:

Comchip Technology 1N4007B-G

Manufacturer No:
1N4007B-G
Manufacturer:
Comchip Technology
Package:
Bulk
Description:
DIODE GEN PURP 1KV 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007B-G is a general-purpose rectifier diode produced by Comchip Technology. This diode is part of the 1N400x series, known for its high current capability and low forward voltage drop. It is widely used in various electronic circuits for rectification and voltage regulation.

Key Specifications

Parameter Symbol 1N4007B-G Unit
Peak Repetitive Reverse Voltage VRRM 1000 V
Maximum RMS Voltage VRMS 700 V
Maximum DC Blocking Voltage VDC 1000 V
Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms single half sine-wave) IFSM 30 A
Forward Voltage at IF = 1.0 A VF 1.1 V
Reverse Current at Rated DC Blocking Voltage IR 5.0 μA μA
Operating and Storage Temperature Range TJ, TSTG -50 to +150 °C

Key Features

  • Diffused Junction: Ensures high current capability and reliability.
  • Low Forward Voltage Drop: Minimizes power loss during operation.
  • Surge Overload Rating: Can handle peak forward surge currents up to 30 A.
  • Low Reverse Leakage Current: Reduces energy waste and improves efficiency.
  • Lead-Free Finish; RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
  • DO-41 Package: Molded plastic case with UL flammability classification rating 94V-0.

Applications

  • Power Supplies: Used in AC-DC conversion and voltage regulation.
  • Automotive Systems: Suitable for various automotive applications requiring high reliability and surge capability.
  • Consumer Electronics: Found in devices such as TVs, computers, and other electronic equipment.
  • Industrial Control Systems: Used in control circuits and power management systems.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4007B-G diode?

    The peak repetitive reverse voltage (VRRM) is 1000 V.

  2. What is the maximum average forward rectified current for the 1N4007B-G?

    The maximum average forward rectified current (IF(AV)) is 1.0 A.

  3. What is the forward voltage drop at 1.0 A for the 1N4007B-G?

    The forward voltage drop (VF) at 1.0 A is 1.1 V.

  4. Is the 1N4007B-G RoHS compliant?
  5. What is the operating temperature range for the 1N4007B-G?

    The operating and storage temperature range is -50 to +150 °C.

  6. What is the peak forward surge current rating for the 1N4007B-G?

    The peak forward surge current (IFSM) is 30 A for an 8.3 ms single half sine-wave.

  7. What type of package does the 1N4007B-G come in?

    The 1N4007B-G comes in a DO-41 plastic package.

  8. Is the 1N4007B-G suitable for automotive applications?
  9. What is the reverse current at the rated DC blocking voltage for the 1N4007B-G?

    The reverse current (IR) at the rated DC blocking voltage is 5.0 μA.

  10. What is the typical junction capacitance of the 1N4007B-G?

    The typical junction capacitance (Cj) is 15 pF at 1 MHz and 4.0 V DC reverse voltage.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.21
4,213

Please send RFQ , we will respond immediately.

Same Series
1N4007B-G
1N4007B-G
DIODE GEN PURP 1KV 1A DO41
1N4002B-G
1N4002B-G
DIODE GEN PURP 100V 1A DO41
1N4004-G
1N4004-G
DIODE GEN PURP 400V 1A DO41
1N4002T-G
1N4002T-G
DIODE GEN PURP 100V 1A DO41
1N4003T-G
1N4003T-G
DIODE GEN PURP 200V 1A DO41
1N4005T-G
1N4005T-G
DIODE GEN PURP 600V 1A DO41
1N4006T-G
1N4006T-G
DIODE GEN PURP 800V 1A DO41
1N4003B-G
1N4003B-G
DIODE GEN PURP 200V 1A DO41
1N4005B-G
1N4005B-G
DIODE GEN PURP 600V 1A DO41
1N4006B-G
1N4006B-G
DIODE GEN PURP 800V 1A DO41

Similar Products

Part Number 1N4007B-G 1N4007T-G 1N4006B-G 1N4007-G
Manufacturer Comchip Technology Comchip Technology Comchip Technology Comchip Technology
Product Status Active Active Active Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 800 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
BAS16T-TP
BAS16T-TP
Micro Commercial Co
DIODE GEN PURP 85V 75MA SOT523
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
1N4004GP
1N4004GP
onsemi
DIODE GEN PURP 400V 1A DO41
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

BAV99-G
BAV99-G
Comchip Technology
DIODE ARRAY GP 70V 215MA SOT23
BAT54ST-HF
BAT54ST-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23
1N4007-G
1N4007-G
Comchip Technology
DIODE GEN PURP 1KV 1A DO41
1N4148W-HF
1N4148W-HF
Comchip Technology
DIODE SWITCHING 100V 150MA 500MW
BAT54-G
BAT54-G
Comchip Technology
DIODE SCHOTTKY 30V 200MA SOT23-3
1N5406-G
1N5406-G
Comchip Technology
DIODE GEN PURP 600V 3A DO201AD
BZX84C47CC-HF
BZX84C47CC-HF
Comchip Technology
DIODE ZENER 47V 350MW SOT23
BZX84C12CC-HF
BZX84C12CC-HF
Comchip Technology
DIODE ZENER 12V 350MW SOT23
MMBT3904-HF
MMBT3904-HF
Comchip Technology
TRANS NPN 40V 0.2A SOT23-3
MMBT2222A-G
MMBT2222A-G
Comchip Technology
TRANS NPN 40V 0.6A SOT23-3
BC856A-HF
BC856A-HF
Comchip Technology
TRANS PNP 65V 0.1A SOT23-3
BC857B-HF
BC857B-HF
Comchip Technology
TRANS PNP 45V 0.1A SOT23-3