1N4007-G
  • Share:

Comchip Technology 1N4007-G

Manufacturer No:
1N4007-G
Manufacturer:
Comchip Technology
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 1KV 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007-G is a general-purpose silicon rectifier diode produced by Comchip Technology. This diode is designed for a wide range of applications requiring a reliable and efficient rectification process. It is part of the 1N4000 series, known for its robust performance and versatility in various electronic circuits.

Key Specifications

ParameterValue
Part Number1N4007-G
ManufacturerComchip Technology
PackageDO-41 (Transfer Molded Plastic)
EpoxyUL 94V-0 Rate Flame Retardant
PolarityIndicated by Cathode Band
Maximum Average Rectified Current1 A
Peak Reverse Voltage1000 V
Forward Voltage DropTypically 1.1 V at 1 A
Operating Temperature Range-55°C to +150°C

Key Features

  • High surge current capability.
  • Low forward voltage drop.
  • High peak reverse voltage (1000 V).
  • UL 94V-0 rated epoxy for flame retardancy.
  • Transfer molded plastic case (DO-41) for durability.
  • Cathode band for polarity indication.

Applications

The 1N4007-G diode is suitable for a variety of applications, including:

  • Power supplies and rectifier circuits.
  • Switching and general-purpose rectification.
  • Free-wheeling diodes in inductive loads.
  • Clamping and voltage regulation circuits.

Q & A

  1. What is the maximum average rectified current of the 1N4007-G diode?
    The maximum average rectified current is 1 A.
  2. What is the peak reverse voltage of the 1N4007-G diode?
    The peak reverse voltage is 1000 V.
  3. What is the typical forward voltage drop of the 1N4007-G diode?
    The typical forward voltage drop is 1.1 V at 1 A.
  4. What is the operating temperature range of the 1N4007-G diode?
    The operating temperature range is -55°C to +150°C.
  5. What type of package does the 1N4007-G diode come in?
    The 1N4007-G diode comes in a DO-41 (transfer molded plastic) package.
  6. Is the epoxy used in the 1N4007-G diode flame retardant?
    Yes, the epoxy is UL 94V-0 rate flame retardant.
  7. How is the polarity of the 1N4007-G diode indicated?
    The polarity is indicated by a cathode band.
  8. What are some common applications of the 1N4007-G diode?
    Common applications include power supplies, switching and general-purpose rectification, free-wheeling diodes in inductive loads, and clamping and voltage regulation circuits.
  9. Who is the manufacturer of the 1N4007-G diode?
    The manufacturer is Comchip Technology.
  10. Where can I find the datasheet for the 1N4007-G diode?
    You can find the datasheet on the Comchip Technology website or through datasheet repositories like Alldatasheet.com.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.21
846

Please send RFQ , we will respond immediately.

Same Series
1N4001-G
1N4001-G
DIODE GEN PURP 50V 1A DO41
1N4002-G
1N4002-G
DIODE GEN PURP 100V 1A DO41
1N4003-G
1N4003-G
DIODE GEN PURP 200V 1A DO41
1N4005-G
1N4005-G
DIODE GEN PURP 600V 1A DO41
1N4006-G
1N4006-G
DIODE GEN PURP 800V 1A DO41

Similar Products

Part Number 1N4007-G 1N4007T-G 1N4007G 1N4007B-G 1N4007-T 1N4006-G 1N4007-B 1N4007-F
Manufacturer Comchip Technology Comchip Technology SMC Diode Solutions Comchip Technology Diodes Incorporated Comchip Technology Diodes Incorporated Rectron USA
Product Status Active Active Active Active Not For New Designs Active Obsolete Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V 1000 V 1000 V 800 V 1000 V -
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1 V @ 1 A 1.1 V @ 1 A 1 V @ 1 A 1.1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 800 V 5 µA @ 1000 V 200 nA @ 1000 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -65°C ~ 175°C -55°C ~ 150°C -65°C ~ 150°C -55°C ~ 150°C - -55°C ~ 150°C

Related Product By Categories

BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
1N4148WSF-7
1N4148WSF-7
Diodes Incorporated
DIODE GEN PURP 100V 250MA SOD323
BAS70L,315
BAS70L,315
Nexperia USA Inc.
DIODE SCHOT 70V 70MA DFN1006-2
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
STPS3L60UF
STPS3L60UF
STMicroelectronics
DIODE SCHOTTKY 60V 3A SMBFLAT
PMEG4010ER-QX
PMEG4010ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

BAT54S-HF
BAT54S-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23
BAT54C-HF
BAT54C-HF
Comchip Technology
DIODE SCHOTTKY 30V 0.2A SOT-23
BAV70-HF
BAV70-HF
Comchip Technology
DIODE SWITCHING COMMON CATHODE 7
1N4007B-G
1N4007B-G
Comchip Technology
DIODE GEN PURP 1KV 1A DO41
1N4002-G
1N4002-G
Comchip Technology
DIODE GEN PURP 100V 1A DO41
BZX84C27CC-HF
BZX84C27CC-HF
Comchip Technology
DIODE ZENER 27V 350MW SOT23
BZX84C8V2CC-HF
BZX84C8V2CC-HF
Comchip Technology
DIODE ZENER 8.2V 350MW SOT23
BZX84C22CC-HF
BZX84C22CC-HF
Comchip Technology
DIODE ZENER 22V 350MW SOT23
MMBT3904-G
MMBT3904-G
Comchip Technology
TRANS NPN 40V 0.2A SOT23-3
BC856A-HF
BC856A-HF
Comchip Technology
TRANS PNP 65V 0.1A SOT23-3
BC857A-HF
BC857A-HF
Comchip Technology
TRANS PNP 45V 0.1A SOT23-3
BSS84-HF
BSS84-HF
Comchip Technology
MOSFET P-CH 50V 130MA SOT23-3