1N4001-G
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Comchip Technology 1N4001-G

Manufacturer No:
1N4001-G
Manufacturer:
Comchip Technology
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 50V 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4001-G is a general-purpose silicon rectifier diode produced by Comchip Technology. This diode is part of the 1N4001-G through 1N4007-G series, each with varying voltage ratings. The 1N4001-G is specifically designed for low-cost, high-reliability applications, offering a balance between forward voltage drop, reverse leakage, and forward surge current capability.

Key Specifications

Parameter Unit Value
Maximum Repetitive Peak Reverse Voltage (VRRM) V 50
Maximum RMS Voltage (VRMS) V 35
Maximum DC Blocking Voltage (VDC) V 50
Maximum Average Forward Rectified Current (I(AV)) A 1.0
Peak Forward Surge Current (IFSM) A 30
Maximum Instantaneous Forward Voltage (VF) @ 1.0A V 1.1
Operating Temperature Range (TJ) °C -55 ~ +150
Storage Temperature Range (TSTG) °C -55 ~ +150
Maximum DC Reverse Current at Rated DC Blocking Voltage (IR) μA 5
Typical Junction Capacitance (CJ) pF 15 (at 1 MHz, 4 V DC)
Thermal Resistance (RθJA) °C/W 50 (junction to ambient)

Key Features

  • Low cost construction.
  • Fast forward voltage drop.
  • Low reverse leakage.
  • High forward surge current capability.
  • High soldering temperature guarantee: 260°C for 10 seconds.
  • Transfer molded plastic case with UL 94V-0 rate flame retardant epoxy.
  • Polarity indicated by cathode band.
  • Plated axial lead, solderable per MIL-STD-750, method 2026.
  • Any mounting position.
  • RoHS compliant.

Applications

The 1N4001-G diode is suitable for a variety of general-purpose rectification applications, including:

  • Power supplies and DC power systems.
  • Rectifier circuits in electronic devices.
  • Protection circuits against voltage spikes and surges.
  • Audio and video equipment.
  • Automotive and industrial electronics.

Q & A

  1. What is the maximum repetitive peak reverse voltage (VRRM) of the 1N4001-G diode?

    The maximum repetitive peak reverse voltage (VRRM) of the 1N4001-G diode is 50 V.

  2. What is the maximum average forward rectified current (I(AV)) of the 1N4001-G diode?

    The maximum average forward rectified current (I(AV)) of the 1N4001-G diode is 1.0 A.

  3. What is the peak forward surge current (IFSM) of the 1N4001-G diode?

    The peak forward surge current (IFSM) of the 1N4001-G diode is 30 A.

  4. What is the operating temperature range of the 1N4001-G diode?

    The operating temperature range of the 1N4001-G diode is -55°C to +150°C.

  5. Is the 1N4001-G diode RoHS compliant?

    Yes, the 1N4001-G diode is RoHS compliant.

  6. What is the typical junction capacitance (CJ) of the 1N4001-G diode?

    The typical junction capacitance (CJ) of the 1N4001-G diode is 15 pF at 1 MHz and 4 V DC.

  7. What is the thermal resistance (RθJA) of the 1N4001-G diode?

    The thermal resistance (RθJA) of the 1N4001-G diode is 50°C/W.

  8. What type of case does the 1N4001-G diode have?

    The 1N4001-G diode has a transfer molded plastic case with UL 94V-0 rate flame retardant epoxy.

  9. How is the polarity of the 1N4001-G diode indicated?

    The polarity of the 1N4001-G diode is indicated by a cathode band.

  10. What are some common applications of the 1N4001-G diode?

    The 1N4001-G diode is commonly used in power supplies, DC power systems, rectifier circuits, protection circuits, audio and video equipment, and automotive and industrial electronics.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 50 V
Capacitance @ Vr, F:15pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:-55°C ~ 150°C
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Similar Products

Part Number 1N4001-G 1N4001-T 1N4001B-G 1N4001G 1N4002-G 1N4001-B
Manufacturer Comchip Technology Diodes Incorporated Comchip Technology onsemi Comchip Technology Diodes Incorporated
Product Status Active Not For New Designs Active Active Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 50 V 50 V 100 V 50 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 5 µA @ 50 V 5 µA @ 50 V 5 µA @ 50 V 10 µA @ 50 V 5 µA @ 100 V 5 µA @ 50 V
Capacitance @ Vr, F 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz - 15pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 Axial DO-41 DO-41
Operating Temperature - Junction -55°C ~ 150°C -65°C ~ 150°C -55°C ~ 150°C -65°C ~ 175°C -55°C ~ 150°C -

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