BC856CW-G
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Comchip Technology BC856CW-G

Manufacturer No:
BC856CW-G
Manufacturer:
Comchip Technology
Package:
Tape & Reel (TR)
Description:
TRANS PNP 65V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856CW-G is a PNP bipolar junction transistor (BJT) manufactured by Comchip Technology. This transistor is part of the BC856 to BC858 series, which are known for their high performance and versatility in various electronic applications. The BC856CW-G is ideally suited for automatic insertion and is widely used in switching and audio frequency (AF) amplifier applications.

Key Specifications

ParameterSymbolValueUnit
Collector-Base VoltageVCBO-80V
Collector-Emitter VoltageVCEO-65V
Emitter-Base VoltageVEBO-5.0V
Continuous Collector CurrentIC-100mA
Peak Pulse Collector CurrentICM-200mA
Power DissipationPD150mW
Thermal Resistance, Junction to AmbientRθJA625°C/W
Operating and Storage Temperature RangeTJ, TSTG-65 to +150°C
DC Current Gain (hFE)hFE125-250
Collector-Emitter Saturation VoltageVCE(sat)-75 to -300mV
Transition FrequencyfT100MHz
Package/CaseSOT-323

Key Features

  • Ideally suited for automatic insertion.
  • High performance in switching and AF amplifier applications.
  • Complementary NPN types available (BC846AW - BC848CW).
  • Low power dissipation of 150 mW.
  • Wide operating and storage temperature range of -65°C to +150°C.
  • Small signal transistor with high DC current gain (hFE) ranging from 125 to 250.
  • Compact SOT-323 package, suitable for surface mount applications.

Applications

The BC856CW-G transistor is versatile and can be used in a variety of applications, including:

  • Switching circuits: Due to its high current gain and low saturation voltage, it is suitable for high-speed switching applications.
  • Audio Frequency (AF) Amplifiers: Its high transition frequency and low noise figure make it ideal for audio amplification.
  • General Purpose Amplification: It can be used in various general-purpose amplifier circuits requiring a PNP transistor.

Q & A

  1. What is the collector-base voltage (VCBO) of the BC856CW-G transistor?
    The collector-base voltage (VCBO) of the BC856CW-G transistor is -80 V.
  2. What is the maximum continuous collector current (IC) of the BC856CW-G?
    The maximum continuous collector current (IC) is -100 mA.
  3. What is the power dissipation (PD) of the BC856CW-G?
    The power dissipation (PD) is 150 mW.
  4. What is the operating and storage temperature range of the BC856CW-G?
    The operating and storage temperature range is -65°C to +150°C.
  5. What is the DC current gain (hFE) of the BC856CW-G?
    The DC current gain (hFE) ranges from 125 to 250.
  6. What is the transition frequency (fT) of the BC856CW-G?
    The transition frequency (fT) is 100 MHz.
  7. In what package is the BC856CW-G available?
    The BC856CW-G is available in the SOT-323 package.
  8. What are some common applications of the BC856CW-G transistor?
    Common applications include switching circuits, AF amplifiers, and general-purpose amplification.
  9. Is the BC856CW-G RoHS compliant?
    Yes, the BC856CW-G is RoHS compliant.
  10. What is the collector-emitter saturation voltage (VCE(sat)) of the BC856CW-G?
    The collector-emitter saturation voltage (VCE(sat)) ranges from -75 to -300 mV.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:150 mW
Frequency - Transition:100MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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Same Series
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BC858AW-G
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BC858CW-G
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Similar Products

Part Number BC856CW-G BC856AW-G BC856BW-G
Manufacturer Comchip Technology Comchip Technology Comchip Technology
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2.2mA, 5V
Power - Max 150 mW 150 mW 150 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SOT-323 SOT-323 SOT-323

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