BC856AW-G
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Comchip Technology BC856AW-G

Manufacturer No:
BC856AW-G
Manufacturer:
Comchip Technology
Package:
Tape & Reel (TR)
Description:
TRANS PNP 65V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856AW-G, manufactured by Comchip Technology, is a PNP (Positive-Negative-Positive) Bipolar Junction Transistor (BJT) designed for surface mount applications. It is packaged in a SOT-323 case, making it suitable for a variety of electronic circuits requiring low power amplification and switching. This transistor is part of the BC856AW through BC858CW series, known for their reliability and performance in general-purpose applications.

Key Specifications

Parameter Symbol Value Units Conditions
Collector Current IC -100 mA
Collector-Base Voltage VCBO -80 V IC = -10 μA, IE = 0
Collector-Emitter Voltage VCEO -65 V IC = -10 mA, IB = 0
Emitter-Base Breakdown Voltage VEBO -5 V IE = -1 μA, IC = 0
Power Dissipation Pcm 150 mW Ta = 25°C
Transition Frequency fT 100 MHz VCE = -5 V, IC = -10 mA, f = 100 MHz
DC Current Gain (hFE) 220 (Min) @ 2.2 mA, 5 V
Base-Emitter Saturation Voltage VBE(sat) -1.1 V @ IC = -100 mA, IB = -5 mA
Collector-Emitter Saturation Voltage VCE(sat) -0.65 V @ IC = -100 mA, IB = -5 mA
Operating Junction Temperature TJ -65°C to +150°C
Storage Temperature Range TSTG -65°C to +150°C
Package Type SOT-323

Key Features

  • Halogen Free and RoHS Compliant: The BC856AW-G is a “Green” device, containing less than 900 ppm bromine, chlorine, and antimony compounds, and is lead-free, making it environmentally friendly and compliant with RoHS standards.
  • Low Power Dissipation: With a maximum power dissipation of 150 mW, this transistor is suitable for low power amplification tasks.
  • High Transition Frequency: The transistor has a transition frequency of 100 MHz, indicating its capability in high-frequency operations.
  • Low Leakage Current: It features a collector-base cutoff current (ICBO) of 15 nA, ensuring low leakage.
  • Efficient Current Amplification: The device achieves a DC current gain (hFE) of 220 at 2.2 mA and 5V, ensuring efficient current amplification.
  • Wide Operating Temperature Range: The transistor operates within a junction temperature range of -65°C to +150°C, making it versatile for various environmental conditions.

Applications

  • Switching Applications: The BC856AW-G is suitable for switching applications due to its high transition frequency and low saturation voltages.
  • Audio Frequency (AF) Amplifiers: It is ideal for use in AF amplifiers because of its good current gain and low noise characteristics.
  • General Purpose Amplification: This transistor can be used in a variety of general-purpose amplification tasks where low power and high reliability are required.

Q & A

  1. What is the collector current rating of the BC856AW-G transistor?

    The collector current rating of the BC856AW-G transistor is -100 mA.

  2. What is the maximum collector-emitter voltage for the BC856AW-G?

    The maximum collector-emitter voltage for the BC856AW-G is -65 V.

  3. What is the transition frequency of the BC856AW-G transistor?

    The transition frequency of the BC856AW-G transistor is 100 MHz.

  4. Is the BC856AW-G RoHS compliant?

    Yes, the BC856AW-G is RoHS compliant and lead-free.

  5. What is the operating junction temperature range for the BC856AW-G?

    The operating junction temperature range for the BC856AW-G is -65°C to +150°C.

  6. What is the package type of the BC856AW-G transistor?

    The package type of the BC856AW-G transistor is SOT-323.

  7. What is the maximum power dissipation of the BC856AW-G transistor?

    The maximum power dissipation of the BC856AW-G transistor is 150 mW.

  8. What are the typical applications of the BC856AW-G transistor?

    The BC856AW-G transistor is typically used in switching applications, audio frequency amplifiers, and general-purpose amplification tasks.

  9. What is the DC current gain (hFE) of the BC856AW-G transistor?

    The DC current gain (hFE) of the BC856AW-G transistor is 220 (Min) at 2.2 mA and 5 V.

  10. Is the BC856AW-G transistor halogen-free?

    Yes, the BC856AW-G transistor is halogen-free and defined as a “Green” device.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:150 mW
Frequency - Transition:100MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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Same Series
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TRANS PNP 65V 0.1A SOT323
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BC857AW-G
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BC858AW-G
BC858AW-G
TRANS PNP 30V 0.1A SOT323
BC858CW-G
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TRANS PNP 30V 0.1A SOT323
BC856BW-G
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BC857BW-G
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Similar Products

Part Number BC856AW-G BC856CW-G BC856BW-G
Manufacturer Comchip Technology Comchip Technology Comchip Technology
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2.2mA, 5V
Power - Max 150 mW 150 mW 150 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SOT-323 SOT-323 SOT-323

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