Overview
The SS8050-G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Comchip Technology. This transistor is designed for a wide range of applications requiring high current and voltage handling capabilities. It features a SOT-23-3 package, making it suitable for surface mount technology (SMT) assembly. The SS8050-G is known for its reliability, high current gain, and low saturation voltage, making it a versatile component in various electronic circuits.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V |
| Collector-Emitter Voltage | VCEO | 25 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current | IC | 1.5 | A |
| Collector Power Dissipation | PC | 300 | mW |
| Junction Temperature | TJ | -55 to +150 | °C |
| Storage Temperature | Tstg | -55 to +150 | °C |
| DC Current Gain (hFE) | hFE(1) | 200 - 350 | |
| Transition Frequency | fT | 100 | MHz |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | V |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.2 | V |
Key Features
- High Current Capability: The SS8050-G can handle up to 1.5 A of collector current, making it suitable for applications requiring significant current handling.
- Low Saturation Voltage: With a collector-emitter saturation voltage of 0.5 V and a base-emitter saturation voltage of 1.2 V, this transistor minimizes power losses in switching applications.
- High DC Current Gain: The transistor has a DC current gain (hFE) ranging from 200 to 350, ensuring reliable amplification in various circuits.
- High Transition Frequency: A transition frequency of 100 MHz makes the SS8050-G suitable for high-frequency applications.
- Compact SOT-23-3 Package: The surface mount package is ideal for space-saving designs and SMT assembly.
- Wide Operating Temperature Range: The transistor can operate in a junction temperature range of -55°C to +150°C, making it robust for various environmental conditions.
Applications
- General Purpose Amplification: Suitable for general-purpose amplification in audio, signal processing, and other linear applications.
- Switching Circuits: Ideal for switching applications due to its low saturation voltage and high current handling capability.
- Power Management: Can be used in power management circuits, such as voltage regulators and power supplies.
- Automotive Electronics: Applicable in automotive systems due to its robust temperature range and reliability.
- Consumer Electronics: Used in various consumer electronic devices requiring reliable and efficient transistor performance.
Q & A
- What is the collector current rating of the SS8050-G transistor?
The SS8050-G transistor has a collector current rating of up to 1.5 A.
- What is the maximum collector-emitter voltage for the SS8050-G?
The maximum collector-emitter voltage (VCEO) for the SS8050-G is 25 V.
- What is the typical DC current gain (hFE) of the SS8050-G?
The typical DC current gain (hFE) of the SS8050-G ranges from 200 to 350.
- What is the transition frequency of the SS8050-G transistor?
The transition frequency (fT) of the SS8050-G is 100 MHz.
- What is the package type of the SS8050-G transistor?
The SS8050-G transistor is packaged in a SOT-23-3 surface mount package.
- What is the junction temperature range for the SS8050-G transistor?
The junction temperature range for the SS8050-G transistor is -55°C to +150°C.
- What are some common applications of the SS8050-G transistor?
The SS8050-G transistor is commonly used in general-purpose amplification, switching circuits, power management, automotive electronics, and consumer electronics.
- What is the collector power dissipation of the SS8050-G transistor?
The collector power dissipation (PC) of the SS8050-G transistor is 300 mW.
- What is the base-emitter saturation voltage of the SS8050-G transistor?
The base-emitter saturation voltage (VBE(sat)) of the SS8050-G transistor is 1.2 V.
- Is the SS8050-G transistor RoHS compliant?
Yes, the SS8050-G transistor is RoHS compliant.
