MMBT3904-13
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Diodes Incorporated MMBT3904-13

Manufacturer No:
MMBT3904-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3904-13, produced by Diodes Incorporated, is a 40V NPN small signal transistor packaged in the SOT23 format. This transistor is designed for medium power amplification and switching applications. It is fully RoHS compliant, halogen and antimony free, and meets the UL 94 V-0 flammability rating. The device is suitable for automated placement and features high surge current capability, making it versatile for various electronic designs.

Key Specifications

Parameter Symbol Value Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 200 mA
Power Dissipation PD 300 mW
Junction Temperature TJ -55 to +150 °C
Storage Temperature TSTG -55 to +150 °C
DC Current Gain (hFE) hFE 100 - 400
Collector-Emitter Saturation Voltage VCE(sat) 0.30 V
Base-Emitter Saturation Voltage VBE(sat) 0.95 V
Transition Frequency fT 250 MHz

Key Features

  • Ideal for medium power amplification and switching applications.
  • Complementary PNP type available (MMBT3906).
  • Totally lead-free and fully RoHS compliant.
  • Halogen and antimony free, meeting “Green” device standards.
  • High surge current capability.
  • Moisture sensitivity level: Level 1 per J-STD-020.
  • Package: SOT23 with matte tin plated leads, solderable per J-STD-002.
  • Meets JESD 201 class 1A whisker test.

Applications

  • Switching mode power supply (SMPS).
  • Adapters.
  • Lighting applications.
  • On-board DC/DC converters.

Q & A

  1. What is the maximum collector-emitter voltage of the MMBT3904?

    The maximum collector-emitter voltage (VCEO) is 40V.

  2. What is the power dissipation of the MMBT3904?

    The power dissipation (PD) is 300 mW.

  3. Is the MMBT3904 RoHS compliant?
  4. What is the typical DC current gain (hFE) of the MMBT3904?

    The typical DC current gain (hFE) ranges from 100 to 400.

  5. What are the operating and storage temperature ranges for the MMBT3904?

    The operating and storage temperature ranges are -55°C to +150°C.

  6. What is the collector-emitter saturation voltage of the MMBT3904?

    The collector-emitter saturation voltage (VCE(sat)) is up to 0.30 V.

  7. What is the base-emitter saturation voltage of the MMBT3904?

    The base-emitter saturation voltage (VBE(sat)) is up to 0.95 V.

  8. What is the transition frequency of the MMBT3904?

    The transition frequency (fT) is 250 MHz.

  9. Is the MMBT3904 suitable for automated placement?
  10. What is the moisture sensitivity level of the MMBT3904?

    The moisture sensitivity level is Level 1 per J-STD-020.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:310 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Similar Products

Part Number MMBT3904-13 MMBT3904T-13
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO) 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 310 mW 150 mW
Frequency - Transition 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOT-523
Supplier Device Package SOT-23-3 SOT-523

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