BSS123ATC
  • Share:

Diodes Incorporated BSS123ATC

Manufacturer No:
BSS123ATC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123ATC is a high-reliability, 100V surface-mount MOSFET produced by Diodes Incorporated. This N-Channel enhancement mode MOSFET is designed using advanced trench technology, which enhances its thermal performance and overall efficiency. It is packaged in a compact SOT-23-3 case, making it suitable for a variety of applications where space is limited.

Key Specifications

Parameter Value Unit Conditions
FET Type N-Channel - -
Technology MOSFET (Metal Oxide) - -
Drain to Source Voltage (Vdss) 100 V - -
Current - Continuous Drain (Id) @ 25°C 170 mA - Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5 V, 10 V - -
Rds On (Max) @ Id, Vgs 6 Ohm @ 170 mA, 10 V - -
Vgs(th) (Max) @ Id 2 V @ 1 mA - -
Vgs (Max) ±20 V - -
Input Capacitance (Ciss) (Max) @ Vds 25 pF @ 25 V - -
Power Dissipation (Max) 360 mW (Ta) - -
Operating Temperature -55°C ~ 150°C (TJ) - -
Mounting Type Surface Mount - -
Package / Case TO-236-3, SC-59, SOT-23-3 - -

Key Features

  • High Reliability: Designed for high-reliability applications with exceptional thermal performance.
  • Low Threshold Voltage: With a Vgs(th) of 2V @ 1mA, it is suitable for low-voltage applications.
  • Compact Packaging: Available in SOT-23-3, SC-59, and TO-236-3 packages, making it ideal for space-constrained designs.
  • Advanced Trench Technology: Utilizes Diodes Incorporated's proprietary high-density trench technology for improved performance.
  • Broad Operating Temperature Range: Operates from -55°C to 150°C, making it versatile for various environmental conditions.

Applications

  • Power Management: Suitable for power management circuits due to its high drain-source voltage and continuous drain current capabilities.
  • Switching Circuits: Ideal for switching applications requiring low on-resistance and high reliability.
  • Automotive Systems: Can be used in automotive systems due to its robust operating temperature range and reliability.
  • Consumer Electronics: Applicable in consumer electronics where compact, efficient, and reliable MOSFETs are required.

Q & A

  1. What is the drain-source voltage (Vdss) of the BSS123ATC MOSFET?

    The drain-source voltage (Vdss) of the BSS123ATC MOSFET is 100 V.

  2. What is the continuous drain current (Id) at 25°C for the BSS123ATC?

    The continuous drain current (Id) at 25°C for the BSS123ATC is 170 mA.

  3. What is the maximum gate-source voltage (Vgs) for the BSS123ATC?

    The maximum gate-source voltage (Vgs) for the BSS123ATC is ±20 V.

  4. What are the available package types for the BSS123ATC?

    The BSS123ATC is available in TO-236-3, SC-59, and SOT-23-3 packages.

  5. What is the operating temperature range for the BSS123ATC?

    The operating temperature range for the BSS123ATC is -55°C to 150°C (TJ).

  6. What is the maximum power dissipation for the BSS123ATC?

    The maximum power dissipation for the BSS123ATC is 360 mW (Ta).

  7. What is the input capacitance (Ciss) of the BSS123ATC at 25 V?

    The input capacitance (Ciss) of the BSS123ATC at 25 V is 25 pF.

  8. Is the BSS123ATC suitable for automotive applications?

    Yes, the BSS123ATC is suitable for automotive applications due to its robust operating temperature range and reliability.

  9. What technology is used in the BSS123ATC MOSFET?

    The BSS123ATC MOSFET uses Diodes Incorporated's proprietary high-density trench technology.

  10. What is the threshold voltage (Vgs(th)) of the BSS123ATC?

    The threshold voltage (Vgs(th)) of the BSS123ATC is 2 V @ 1 mA.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:25 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
603

Please send RFQ , we will respond immediately.

Same Series
BSS123ATC
BSS123ATC
MOSFET N-CH 100V 170MA SOT23-3

Similar Products

Part Number BSS123ATC BSS123TC BSS123ATA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 6Ohm @ 100mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2.8V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 25 pF @ 25 V 20 pF @ 25 V 25 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP

Related Product By Brand

BAS70-04-7
BAS70-04-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT23-3
BAW56T-7
BAW56T-7
Diodes Incorporated
DIODE ARRAY GP 85V 75MA SOT523
BAS21T-7-F
BAS21T-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT523
BZX84C12W-7-F
BZX84C12W-7-F
Diodes Incorporated
DIODE ZENER 12V 200MW SOT323
BZX84C11W-7
BZX84C11W-7
Diodes Incorporated
DIODE ZENER 11V 200MW SOT323
BC847BVNQ-7
BC847BVNQ-7
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT56
BC846AW-7-F
BC846AW-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT323
BCV46TC
BCV46TC
Diodes Incorporated
TRANS PNP DARL 60V 0.5A SOT23-3
2N7002W-7-F
2N7002W-7-F
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT323
DMG2305UX-13
DMG2305UX-13
Diodes Incorporated
MOSFET P-CH 20V 4.2A SOT23
2N7002W-7
2N7002W-7
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT-323
74LVC2G34W6-7
74LVC2G34W6-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V SOT26