Overview
The BSS123ATC is a high-reliability, 100V surface-mount MOSFET produced by Diodes Incorporated. This N-Channel enhancement mode MOSFET is designed using advanced trench technology, which enhances its thermal performance and overall efficiency. It is packaged in a compact SOT-23-3 case, making it suitable for a variety of applications where space is limited.
Key Specifications
Parameter | Value | Unit | Conditions |
---|---|---|---|
FET Type | N-Channel | - | - |
Technology | MOSFET (Metal Oxide) | - | - |
Drain to Source Voltage (Vdss) | 100 V | - | - |
Current - Continuous Drain (Id) @ 25°C | 170 mA | - | Ta |
Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 10 V | - | - |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 170 mA, 10 V | - | - |
Vgs(th) (Max) @ Id | 2 V @ 1 mA | - | - |
Vgs (Max) | ±20 V | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 25 pF @ 25 V | - | - |
Power Dissipation (Max) | 360 mW (Ta) | - | - |
Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
Mounting Type | Surface Mount | - | - |
Package / Case | TO-236-3, SC-59, SOT-23-3 | - | - |
Key Features
- High Reliability: Designed for high-reliability applications with exceptional thermal performance.
- Low Threshold Voltage: With a Vgs(th) of 2V @ 1mA, it is suitable for low-voltage applications.
- Compact Packaging: Available in SOT-23-3, SC-59, and TO-236-3 packages, making it ideal for space-constrained designs.
- Advanced Trench Technology: Utilizes Diodes Incorporated's proprietary high-density trench technology for improved performance.
- Broad Operating Temperature Range: Operates from -55°C to 150°C, making it versatile for various environmental conditions.
Applications
- Power Management: Suitable for power management circuits due to its high drain-source voltage and continuous drain current capabilities.
- Switching Circuits: Ideal for switching applications requiring low on-resistance and high reliability.
- Automotive Systems: Can be used in automotive systems due to its robust operating temperature range and reliability.
- Consumer Electronics: Applicable in consumer electronics where compact, efficient, and reliable MOSFETs are required.
Q & A
- What is the drain-source voltage (Vdss) of the BSS123ATC MOSFET?
The drain-source voltage (Vdss) of the BSS123ATC MOSFET is 100 V.
- What is the continuous drain current (Id) at 25°C for the BSS123ATC?
The continuous drain current (Id) at 25°C for the BSS123ATC is 170 mA.
- What is the maximum gate-source voltage (Vgs) for the BSS123ATC?
The maximum gate-source voltage (Vgs) for the BSS123ATC is ±20 V.
- What are the available package types for the BSS123ATC?
The BSS123ATC is available in TO-236-3, SC-59, and SOT-23-3 packages.
- What is the operating temperature range for the BSS123ATC?
The operating temperature range for the BSS123ATC is -55°C to 150°C (TJ).
- What is the maximum power dissipation for the BSS123ATC?
The maximum power dissipation for the BSS123ATC is 360 mW (Ta).
- What is the input capacitance (Ciss) of the BSS123ATC at 25 V?
The input capacitance (Ciss) of the BSS123ATC at 25 V is 25 pF.
- Is the BSS123ATC suitable for automotive applications?
Yes, the BSS123ATC is suitable for automotive applications due to its robust operating temperature range and reliability.
- What technology is used in the BSS123ATC MOSFET?
The BSS123ATC MOSFET uses Diodes Incorporated's proprietary high-density trench technology.
- What is the threshold voltage (Vgs(th)) of the BSS123ATC?
The threshold voltage (Vgs(th)) of the BSS123ATC is 2 V @ 1 mA.