BSS123ATC
  • Share:

Diodes Incorporated BSS123ATC

Manufacturer No:
BSS123ATC
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123ATC is a high-reliability, 100V surface-mount MOSFET produced by Diodes Incorporated. This N-Channel enhancement mode MOSFET is designed using advanced trench technology, which enhances its thermal performance and overall efficiency. It is packaged in a compact SOT-23-3 case, making it suitable for a variety of applications where space is limited.

Key Specifications

Parameter Value Unit Conditions
FET Type N-Channel - -
Technology MOSFET (Metal Oxide) - -
Drain to Source Voltage (Vdss) 100 V - -
Current - Continuous Drain (Id) @ 25°C 170 mA - Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5 V, 10 V - -
Rds On (Max) @ Id, Vgs 6 Ohm @ 170 mA, 10 V - -
Vgs(th) (Max) @ Id 2 V @ 1 mA - -
Vgs (Max) ±20 V - -
Input Capacitance (Ciss) (Max) @ Vds 25 pF @ 25 V - -
Power Dissipation (Max) 360 mW (Ta) - -
Operating Temperature -55°C ~ 150°C (TJ) - -
Mounting Type Surface Mount - -
Package / Case TO-236-3, SC-59, SOT-23-3 - -

Key Features

  • High Reliability: Designed for high-reliability applications with exceptional thermal performance.
  • Low Threshold Voltage: With a Vgs(th) of 2V @ 1mA, it is suitable for low-voltage applications.
  • Compact Packaging: Available in SOT-23-3, SC-59, and TO-236-3 packages, making it ideal for space-constrained designs.
  • Advanced Trench Technology: Utilizes Diodes Incorporated's proprietary high-density trench technology for improved performance.
  • Broad Operating Temperature Range: Operates from -55°C to 150°C, making it versatile for various environmental conditions.

Applications

  • Power Management: Suitable for power management circuits due to its high drain-source voltage and continuous drain current capabilities.
  • Switching Circuits: Ideal for switching applications requiring low on-resistance and high reliability.
  • Automotive Systems: Can be used in automotive systems due to its robust operating temperature range and reliability.
  • Consumer Electronics: Applicable in consumer electronics where compact, efficient, and reliable MOSFETs are required.

Q & A

  1. What is the drain-source voltage (Vdss) of the BSS123ATC MOSFET?

    The drain-source voltage (Vdss) of the BSS123ATC MOSFET is 100 V.

  2. What is the continuous drain current (Id) at 25°C for the BSS123ATC?

    The continuous drain current (Id) at 25°C for the BSS123ATC is 170 mA.

  3. What is the maximum gate-source voltage (Vgs) for the BSS123ATC?

    The maximum gate-source voltage (Vgs) for the BSS123ATC is ±20 V.

  4. What are the available package types for the BSS123ATC?

    The BSS123ATC is available in TO-236-3, SC-59, and SOT-23-3 packages.

  5. What is the operating temperature range for the BSS123ATC?

    The operating temperature range for the BSS123ATC is -55°C to 150°C (TJ).

  6. What is the maximum power dissipation for the BSS123ATC?

    The maximum power dissipation for the BSS123ATC is 360 mW (Ta).

  7. What is the input capacitance (Ciss) of the BSS123ATC at 25 V?

    The input capacitance (Ciss) of the BSS123ATC at 25 V is 25 pF.

  8. Is the BSS123ATC suitable for automotive applications?

    Yes, the BSS123ATC is suitable for automotive applications due to its robust operating temperature range and reliability.

  9. What technology is used in the BSS123ATC MOSFET?

    The BSS123ATC MOSFET uses Diodes Incorporated's proprietary high-density trench technology.

  10. What is the threshold voltage (Vgs(th)) of the BSS123ATC?

    The threshold voltage (Vgs(th)) of the BSS123ATC is 2 V @ 1 mA.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:25 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
603

Please send RFQ , we will respond immediately.

Same Series
BSS123ATC
BSS123ATC
MOSFET N-CH 100V 170MA SOT23-3

Similar Products

Part Number BSS123ATC BSS123TC BSS123ATA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 6Ohm @ 100mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2.8V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 25 pF @ 25 V 20 pF @ 25 V 25 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

SMBJ5.0CA-13-F
SMBJ5.0CA-13-F
Diodes Incorporated
TVS DIODE 5VWM 9.2VC SMB
1N5711W-7-F
1N5711W-7-F
Diodes Incorporated
DIODE SCHOTTKY 70V 333MW SOD123
BAW56-7
BAW56-7
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23-3
BAS40-04T-7-F-36
BAS40-04T-7-F-36
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT523
BAT54W-7-F
BAT54W-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT323
BZX84C3V0W-7-F
BZX84C3V0W-7-F
Diodes Incorporated
DIODE ZENER 3V 200MW SOT323
BZX84C5V1W-7-F
BZX84C5V1W-7-F
Diodes Incorporated
DIODE ZENER 5.1V 200MW SOT323
BZX84C12Q-7-F
BZX84C12Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZX84C5V6Q-7-F
BZX84C5V6Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZX84C33-7
BZX84C33-7
Diodes Incorporated
DIODE ZENER 33V 300MW SOT23-3
BZX84C2V4-7-G
BZX84C2V4-7-G
Diodes Incorporated
DIODE ZENER
74LVC1G07FW4-7
74LVC1G07FW4-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 6DFN