BSS123ATA
  • Share:

Diodes Incorporated BSS123ATA

Manufacturer No:
BSS123ATA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123ATA is an N-Channel enhancement mode field effect transistor (MOSFET) produced by Diodes Incorporated. This device is fabricated using Diodes Incorporated’s proprietary, high density, and advanced trench technology. It is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. The BSS123ATA is particularly suited for low-voltage, low-current applications.

Key Specifications

Parameter Symbol Min Typ Max Unit Conditions
Drain-Source Voltage VDS - - 100 V VGS = 0V, ID = 250µA
Gate-Source Voltage VGS - - ±20 V -
Continuous Drain Current at TA = 25°C ID - - 0.17 A -
Pulsed Drain Current at TA = 25°C IDM - - 680 mA -
Gate Threshold Voltage VGS(TH) 0.8 1.4 2.0 V VDS = VGS, ID = 1mA
Static Drain-Source On-Resistance RDS(ON) - 3.2 6.0 Ω VGS = 10V, ID = 0.17A
Power Dissipation at TA = 25°C Ptot - - 0.3 W -
Operating and Storage Temperature Range Tj:Tstg -55 - 150 °C -

Key Features

  • Low Gate Threshold Voltage: Ensures easy switching and low power consumption.
  • Low Input Capacitance: Minimizes the impact on high-frequency operations.
  • Fast Switching Speed: Ideal for applications requiring quick on and off times.
  • Low Input/Output Leakage: Reduces power loss and enhances overall efficiency.
  • High Drain-Source Voltage Rating: Provides robust performance with a 100V rating.
  • Totally Lead-Free & Fully RoHS Compliant: Meets environmental and safety standards.
  • Advanced MOSFET Process Technology: High cell density and low on-resistance for high efficiency.
  • Fast Switching and Reverse Body Recovery: Suitable for high-efficiency switched mode power supplies.

Applications

  • Small Servo Motor Control: Ideal for controlling small servo motors due to its low voltage and current capabilities.
  • Power MOSFET Gate Drivers: Used in driving gates of other MOSFETs in power applications.
  • Switching Applications: Suitable for various switching applications requiring fast and reliable performance.
  • High Efficiency Switched Mode Power Supplies: Optimized for use in high-efficiency power supplies due to its low on-resistance and fast switching characteristics.

Q & A

  1. What is the maximum drain-source voltage rating of the BSS123ATA?

    The maximum drain-source voltage rating is 100V.

  2. What is the typical gate threshold voltage of the BSS123ATA?

    The typical gate threshold voltage is 1.4V.

  3. What is the maximum continuous drain current at 25°C for the BSS123ATA?

    The maximum continuous drain current at 25°C is 0.17A.

  4. What is the maximum pulsed drain current at 25°C for the BSS123ATA?

    The maximum pulsed drain current at 25°C is 680mA.

  5. What is the typical static drain-source on-resistance of the BSS123ATA at VGS = 10V and ID = 0.17A?

    The typical static drain-source on-resistance is 3.2Ω.

  6. Is the BSS123ATA RoHS compliant?

    Yes, the BSS123ATA is totally lead-free and fully RoHS compliant.

  7. What are the operating and storage temperature ranges for the BSS123ATA?

    The operating and storage temperature ranges are -55°C to +150°C.

  8. What are some common applications of the BSS123ATA?

    Common applications include small servo motor control, power MOSFET gate drivers, and high-efficiency switched mode power supplies.

  9. What is the package type of the BSS123ATA?

    The package type is SOT-23.

  10. What is the maximum power dissipation at 25°C for the BSS123ATA?

    The maximum power dissipation at 25°C is 0.3W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:25 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
48

Please send RFQ , we will respond immediately.

Same Series
BSS123ATC
BSS123ATC
MOSFET N-CH 100V 170MA SOT23-3

Similar Products

Part Number BSS123ATA BSS123TA BSS123ATC
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 6Ohm @ 100mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 25 pF @ 25 V 20 pF @ 25 V 25 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3

Related Product By Brand

BAS70-05Q-7-F
BAS70-05Q-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT23
BAV21HWF-7
BAV21HWF-7
Diodes Incorporated
DIODE GP 200V 200MA SOD123F
BZX84C27Q-13-F
BZX84C27Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84C4V3W-7
BZX84C4V3W-7
Diodes Incorporated
DIODE ZENER 4.3V 200MW SOT323
BZX84C47-7
BZX84C47-7
Diodes Incorporated
DIODE ZENER 47V 350MW SOT23-3
BC846AW-7-F
BC846AW-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT323
BC846BW-7-F
BC846BW-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT323
MMBT3904FZ-7B
MMBT3904FZ-7B
Diodes Incorporated
TRANS NPN 40V 0.2A 3DFN
BC817-16-7
BC817-16-7
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
BSS84DWQ-7
BSS84DWQ-7
Diodes Incorporated
BSS FAMILY SOT363 T&R 3K
BSS84Q-7-F
BSS84Q-7-F
Diodes Incorporated
BSS FAMILY SOT23 T&R 3K
2N7002-13-F-79
2N7002-13-F-79
Diodes Incorporated
DIODE