BSS123ATA
  • Share:

Diodes Incorporated BSS123ATA

Manufacturer No:
BSS123ATA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123ATA is an N-Channel enhancement mode field effect transistor (MOSFET) produced by Diodes Incorporated. This device is fabricated using Diodes Incorporated’s proprietary, high density, and advanced trench technology. It is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. The BSS123ATA is particularly suited for low-voltage, low-current applications.

Key Specifications

Parameter Symbol Min Typ Max Unit Conditions
Drain-Source Voltage VDS - - 100 V VGS = 0V, ID = 250µA
Gate-Source Voltage VGS - - ±20 V -
Continuous Drain Current at TA = 25°C ID - - 0.17 A -
Pulsed Drain Current at TA = 25°C IDM - - 680 mA -
Gate Threshold Voltage VGS(TH) 0.8 1.4 2.0 V VDS = VGS, ID = 1mA
Static Drain-Source On-Resistance RDS(ON) - 3.2 6.0 Ω VGS = 10V, ID = 0.17A
Power Dissipation at TA = 25°C Ptot - - 0.3 W -
Operating and Storage Temperature Range Tj:Tstg -55 - 150 °C -

Key Features

  • Low Gate Threshold Voltage: Ensures easy switching and low power consumption.
  • Low Input Capacitance: Minimizes the impact on high-frequency operations.
  • Fast Switching Speed: Ideal for applications requiring quick on and off times.
  • Low Input/Output Leakage: Reduces power loss and enhances overall efficiency.
  • High Drain-Source Voltage Rating: Provides robust performance with a 100V rating.
  • Totally Lead-Free & Fully RoHS Compliant: Meets environmental and safety standards.
  • Advanced MOSFET Process Technology: High cell density and low on-resistance for high efficiency.
  • Fast Switching and Reverse Body Recovery: Suitable for high-efficiency switched mode power supplies.

Applications

  • Small Servo Motor Control: Ideal for controlling small servo motors due to its low voltage and current capabilities.
  • Power MOSFET Gate Drivers: Used in driving gates of other MOSFETs in power applications.
  • Switching Applications: Suitable for various switching applications requiring fast and reliable performance.
  • High Efficiency Switched Mode Power Supplies: Optimized for use in high-efficiency power supplies due to its low on-resistance and fast switching characteristics.

Q & A

  1. What is the maximum drain-source voltage rating of the BSS123ATA?

    The maximum drain-source voltage rating is 100V.

  2. What is the typical gate threshold voltage of the BSS123ATA?

    The typical gate threshold voltage is 1.4V.

  3. What is the maximum continuous drain current at 25°C for the BSS123ATA?

    The maximum continuous drain current at 25°C is 0.17A.

  4. What is the maximum pulsed drain current at 25°C for the BSS123ATA?

    The maximum pulsed drain current at 25°C is 680mA.

  5. What is the typical static drain-source on-resistance of the BSS123ATA at VGS = 10V and ID = 0.17A?

    The typical static drain-source on-resistance is 3.2Ω.

  6. Is the BSS123ATA RoHS compliant?

    Yes, the BSS123ATA is totally lead-free and fully RoHS compliant.

  7. What are the operating and storage temperature ranges for the BSS123ATA?

    The operating and storage temperature ranges are -55°C to +150°C.

  8. What are some common applications of the BSS123ATA?

    Common applications include small servo motor control, power MOSFET gate drivers, and high-efficiency switched mode power supplies.

  9. What is the package type of the BSS123ATA?

    The package type is SOT-23.

  10. What is the maximum power dissipation at 25°C for the BSS123ATA?

    The maximum power dissipation at 25°C is 0.3W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:25 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
48

Please send RFQ , we will respond immediately.

Same Series
BSS123ATC
BSS123ATC
MOSFET N-CH 100V 170MA SOT23-3

Similar Products

Part Number BSS123ATA BSS123TA BSS123ATC
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 6Ohm @ 100mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 25 pF @ 25 V 20 pF @ 25 V 25 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3

Related Product By Brand

BAW56-7
BAW56-7
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23-3
BAT54TA
BAT54TA
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
BAS16T-7-F
BAS16T-7-F
Diodes Incorporated
DIODE GP 85V 75MA SOT523
BAS40T-7
BAS40T-7
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA SOT523
BZX84C6V8S-7
BZX84C6V8S-7
Diodes Incorporated
DIODE ZENER ARRAY 6.8V SOT363
BZX84C22Q-7-F
BZX84C22Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZX84C2V4-7-G
BZX84C2V4-7-G
Diodes Incorporated
DIODE ZENER
BZX84C6V2-7-F-31
BZX84C6V2-7-F-31
Diodes Incorporated
DIODE ZENER 6.2V 300MW SOT23
MMBT3904FA-7B
MMBT3904FA-7B
Diodes Incorporated
TRANS NPN 40V 0.2A 3DFN
BCP53QTA
BCP53QTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
BSS138DWK-7
BSS138DWK-7
Diodes Incorporated
MOSFET BVDSS: 41V~60V SOT363 T&R
BSS138WQ-7-F
BSS138WQ-7-F
Diodes Incorporated
BSS FAMILY SOT323 T&R 3K