BSS123TA
  • Share:

Diodes Incorporated BSS123TA

Manufacturer No:
BSS123TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123TA is a N-channel enhancement-mode MOSFET produced by Diodes Incorporated. It features a moulded plastic case with solderable matte tin annealed over alloy 42 lead-frame terminals, adhering to the MIL-STD-202 standard. This MOSFET is manufactured using Diodes' proprietary high-density Trench technology, designed to minimize ON-state resistance while providing rugged, reliable, and fast switching performance. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and various switching applications.

Key Specifications

Parameter Value
Channel Type N Channel
Drain Source Voltage (Vds) 100 V
Continuous Drain Current (Id) 170 mA
On Resistance (Rds(on)) 6 ohm
Transistor Mounting Surface Mount
Power Dissipation (Pd) 300 mW
Transistor Case Style SOT-23
No. of Pins 3 Pins
Rds(on) Test Voltage 10 V
Gate Source Threshold Voltage Max 2.2 V
Operating Temperature Max 150°C
Moisture Sensitivity Level (MSL) MSL 1 - Unlimited

Key Features

  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • High drain-source voltage rating
  • Halogen-free, Green device
  • UL94V-0 Flammability rating
  • Operating temperature range: -55°C to 150°C

Applications

  • Power Management
  • Defence, Military & Aerospace
  • Motor Drive & Control
  • Small servo motor control
  • Power MOSFET gate drivers
  • Switching applications

Q & A

  1. What is the channel type of the BSS123TA MOSFET?

    The BSS123TA is an N-channel MOSFET.

  2. What is the maximum drain-source voltage (Vds) of the BSS123TA?

    The maximum drain-source voltage (Vds) is 100 V.

  3. What is the continuous drain current (Id) of the BSS123TA?

    The continuous drain current (Id) is 170 mA.

  4. What is the on-resistance (Rds(on)) of the BSS123TA?

    The on-resistance (Rds(on)) is 6 ohms.

  5. What is the transistor mounting type of the BSS123TA?

    The transistor is surface mount.

  6. What is the power dissipation (Pd) of the BSS123TA?

    The power dissipation (Pd) is 300 mW.

  7. What is the case style of the BSS123TA?

    The case style is SOT-23.

  8. How many pins does the BSS123TA have?

    The BSS123TA has 3 pins.

  9. What is the gate source threshold voltage max of the BSS123TA?

    The gate source threshold voltage max is 2.2 V.

  10. What is the operating temperature range of the BSS123TA?

    The operating temperature range is -55°C to 150°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.50
68

Please send RFQ , we will respond immediately.

Same Series
BSS123TA
BSS123TA
MOSFET N-CH 100V 170MA SOT23-3

Similar Products

Part Number BSS123TA BSS123TC BSS123ATA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 10V 6Ohm @ 100mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2.8V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 20 pF @ 25 V 20 pF @ 25 V 25 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

BAS70-04-7-F
BAS70-04-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT23-3
BAV99T-7-G
BAV99T-7-G
Diodes Incorporated
DIODE ARRAY GP 85V 75MA SOT523
BAT54T-7
BAT54T-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT523
BZX84B16Q-7-F
BZX84B16Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZX84C2V4-7
BZX84C2V4-7
Diodes Incorporated
DIODE ZENER 2.4V 300MW SOT23-3
BZX84C10-7-G
BZX84C10-7-G
Diodes Incorporated
DIODE ZENER
BZX84C27-7-G
BZX84C27-7-G
Diodes Incorporated
DIODE ZENER
BCP5616QTA
BCP5616QTA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BC848B-7-F
BC848B-7-F
Diodes Incorporated
TRANS NPN 30V 0.1A SOT23-3
BCP5316QTA
BCP5316QTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
MMBT3904-7
MMBT3904-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT23-3
2N7002TQ-7-F
2N7002TQ-7-F
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT523