BSS123TA
  • Share:

Diodes Incorporated BSS123TA

Manufacturer No:
BSS123TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123TA is a N-channel enhancement-mode MOSFET produced by Diodes Incorporated. It features a moulded plastic case with solderable matte tin annealed over alloy 42 lead-frame terminals, adhering to the MIL-STD-202 standard. This MOSFET is manufactured using Diodes' proprietary high-density Trench technology, designed to minimize ON-state resistance while providing rugged, reliable, and fast switching performance. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and various switching applications.

Key Specifications

Parameter Value
Channel Type N Channel
Drain Source Voltage (Vds) 100 V
Continuous Drain Current (Id) 170 mA
On Resistance (Rds(on)) 6 ohm
Transistor Mounting Surface Mount
Power Dissipation (Pd) 300 mW
Transistor Case Style SOT-23
No. of Pins 3 Pins
Rds(on) Test Voltage 10 V
Gate Source Threshold Voltage Max 2.2 V
Operating Temperature Max 150°C
Moisture Sensitivity Level (MSL) MSL 1 - Unlimited

Key Features

  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • High drain-source voltage rating
  • Halogen-free, Green device
  • UL94V-0 Flammability rating
  • Operating temperature range: -55°C to 150°C

Applications

  • Power Management
  • Defence, Military & Aerospace
  • Motor Drive & Control
  • Small servo motor control
  • Power MOSFET gate drivers
  • Switching applications

Q & A

  1. What is the channel type of the BSS123TA MOSFET?

    The BSS123TA is an N-channel MOSFET.

  2. What is the maximum drain-source voltage (Vds) of the BSS123TA?

    The maximum drain-source voltage (Vds) is 100 V.

  3. What is the continuous drain current (Id) of the BSS123TA?

    The continuous drain current (Id) is 170 mA.

  4. What is the on-resistance (Rds(on)) of the BSS123TA?

    The on-resistance (Rds(on)) is 6 ohms.

  5. What is the transistor mounting type of the BSS123TA?

    The transistor is surface mount.

  6. What is the power dissipation (Pd) of the BSS123TA?

    The power dissipation (Pd) is 300 mW.

  7. What is the case style of the BSS123TA?

    The case style is SOT-23.

  8. How many pins does the BSS123TA have?

    The BSS123TA has 3 pins.

  9. What is the gate source threshold voltage max of the BSS123TA?

    The gate source threshold voltage max is 2.2 V.

  10. What is the operating temperature range of the BSS123TA?

    The operating temperature range is -55°C to 150°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.50
68

Please send RFQ , we will respond immediately.

Same Series
BSS123TC
BSS123TC
MOSFET N-CH 100V 170MA SOT23-3

Similar Products

Part Number BSS123TA BSS123TC BSS123ATA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 10V 6Ohm @ 100mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2.8V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 20 pF @ 25 V 20 pF @ 25 V 25 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK

Related Product By Brand

BAV170Q-13-F
BAV170Q-13-F
Diodes Incorporated
SWITCHING DIODE BVR <= 100V SOT2
BAS40-04T-7-F-36
BAS40-04T-7-F-36
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT523
1N4148WS-13-F
1N4148WS-13-F
Diodes Incorporated
DIODE GEN PURP 75V 150MA SOD323
MURS320-13-F
MURS320-13-F
Diodes Incorporated
DIODE GEN PURP 200V 3A SMC
BAS40W-7
BAS40W-7
Diodes Incorporated
DIODE SCHOTTKY 40V 200MA SOT323
BZX84C3V0S-7-F-79
BZX84C3V0S-7-F-79
Diodes Incorporated
DIODE ZENER
BZX84C3V9T-7-F
BZX84C3V9T-7-F
Diodes Incorporated
DIODE ZENER 3.9V 150MW SOT523
MMBT3904T-7-F-79
MMBT3904T-7-F-79
Diodes Incorporated
IC TRANSISTOR ARRAY SMD
2N7002V-7
2N7002V-7
Diodes Incorporated
MOSFET 2N-CH 60V 0.28A SOT-563
BSS138W-7
BSS138W-7
Diodes Incorporated
MOSFET N-CH 50V 0.2A SOT323
74LVC1G125QW5-7
74LVC1G125QW5-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V SOT25
74LVC2G34FW4-7
74LVC2G34FW4-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 6DFN