BSS123TA
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Diodes Incorporated BSS123TA

Manufacturer No:
BSS123TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The BSS123TA is a N-channel enhancement-mode MOSFET produced by Diodes Incorporated. It features a moulded plastic case with solderable matte tin annealed over alloy 42 lead-frame terminals, adhering to the MIL-STD-202 standard. This MOSFET is manufactured using Diodes' proprietary high-density Trench technology, designed to minimize ON-state resistance while providing rugged, reliable, and fast switching performance. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and various switching applications.

Key Specifications

Parameter Value
Channel Type N Channel
Drain Source Voltage (Vds) 100 V
Continuous Drain Current (Id) 170 mA
On Resistance (Rds(on)) 6 ohm
Transistor Mounting Surface Mount
Power Dissipation (Pd) 300 mW
Transistor Case Style SOT-23
No. of Pins 3 Pins
Rds(on) Test Voltage 10 V
Gate Source Threshold Voltage Max 2.2 V
Operating Temperature Max 150°C
Moisture Sensitivity Level (MSL) MSL 1 - Unlimited

Key Features

  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • High drain-source voltage rating
  • Halogen-free, Green device
  • UL94V-0 Flammability rating
  • Operating temperature range: -55°C to 150°C

Applications

  • Power Management
  • Defence, Military & Aerospace
  • Motor Drive & Control
  • Small servo motor control
  • Power MOSFET gate drivers
  • Switching applications

Q & A

  1. What is the channel type of the BSS123TA MOSFET?

    The BSS123TA is an N-channel MOSFET.

  2. What is the maximum drain-source voltage (Vds) of the BSS123TA?

    The maximum drain-source voltage (Vds) is 100 V.

  3. What is the continuous drain current (Id) of the BSS123TA?

    The continuous drain current (Id) is 170 mA.

  4. What is the on-resistance (Rds(on)) of the BSS123TA?

    The on-resistance (Rds(on)) is 6 ohms.

  5. What is the transistor mounting type of the BSS123TA?

    The transistor is surface mount.

  6. What is the power dissipation (Pd) of the BSS123TA?

    The power dissipation (Pd) is 300 mW.

  7. What is the case style of the BSS123TA?

    The case style is SOT-23.

  8. How many pins does the BSS123TA have?

    The BSS123TA has 3 pins.

  9. What is the gate source threshold voltage max of the BSS123TA?

    The gate source threshold voltage max is 2.2 V.

  10. What is the operating temperature range of the BSS123TA?

    The operating temperature range is -55°C to 150°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

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Same Series
BSS123TA
BSS123TA
MOSFET N-CH 100V 170MA SOT23-3

Similar Products

Part Number BSS123TA BSS123TC BSS123ATA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 170mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 10V 6Ohm @ 100mA, 10V 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2.8V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 20 pF @ 25 V 20 pF @ 25 V 25 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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