STGWT20H65FB
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STMicroelectronics STGWT20H65FB

Manufacturer No:
STGWT20H65FB
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT 650V 40A 168W TO3P
Delivery:
Payment:
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Product Introduction

Overview

The STGWT20H65FB is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. It is part of the HB series, which utilizes an advanced proprietary trench gate field-stop structure. This technology enhances the device's efficiency, reliability, and speed. The IGBT is designed for high-power applications, offering a balance between conduction and switching losses.

Key Specifications

ParameterValue
Voltage Rating (VCE)650 V
Current Rating (IC)20 A
Maximum Junction Temperature (TJ)150°C
Power Dissipation (PD)168 W
Package TypeTO-3P (Through Hole)

Key Features

  • Advanced proprietary trench gate field-stop structure for improved performance.
  • High voltage rating of 650 V and current rating of 20 A.
  • Low conduction and switching losses.
  • High speed switching capability.
  • Maximum junction temperature of 150°C.
  • TO-3P through-hole package for robust mounting.

Applications

The STGWT20H65FB IGBT is suitable for various high-power applications, including:

  • Industrial power supplies and inverters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power converters.
  • High-frequency switching applications.
  • Power factor correction (PFC) circuits.

Q & A

  1. What is the voltage rating of the STGWT20H65FB IGBT?
    The voltage rating of the STGWT20H65FB IGBT is 650 V.
  2. What is the current rating of the STGWT20H65FB IGBT?
    The current rating of the STGWT20H65FB IGBT is 20 A.
  3. What is the maximum junction temperature of the STGWT20H65FB IGBT?
    The maximum junction temperature of the STGWT20H65FB IGBT is 150°C.
  4. What package type does the STGWT20H65FB IGBT use?
    The STGWT20H65FB IGBT uses a TO-3P through-hole package.
  5. What are the key features of the STGWT20H65FB IGBT?
    The key features include an advanced proprietary trench gate field-stop structure, high voltage and current ratings, low conduction and switching losses, and high speed switching capability.
  6. What are some typical applications of the STGWT20H65FB IGBT?
    Typical applications include industrial power supplies, motor drives, renewable energy systems, high-frequency switching applications, and power factor correction circuits.
  7. Where can I purchase the STGWT20H65FB IGBT?
    The STGWT20H65FB IGBT can be purchased from various electronic component distributors such as Digi-Key, RS Components, and Transfer Multisort Elektronik.
  8. What is the power dissipation of the STGWT20H65FB IGBT?
    The power dissipation of the STGWT20H65FB IGBT is 168 W.
  9. Is the STGWT20H65FB IGBT suitable for high-power switching applications?
    Yes, the STGWT20H65FB IGBT is designed for high-power switching applications due to its low conduction and switching losses and high speed switching capability.
  10. What is the significance of the HB series in the context of the STGWT20H65FB IGBT?
    The HB series, to which the STGWT20H65FB belongs, utilizes advanced proprietary trench gate field-stop technology, enhancing the device's performance and efficiency.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):40 A
Current - Collector Pulsed (Icm):80 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 20A
Power - Max:168 W
Switching Energy:77µJ (on), 170µJ (off)
Input Type:Standard
Gate Charge:120 nC
Td (on/off) @ 25°C:30ns/139ns
Test Condition:400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3P
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Similar Products

Part Number STGWT20H65FB STGWT30H65FB STGWT40H65FB STGWT60H65FB STGWT80H65FB STGWT20HP65FB
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Active Obsolete Obsolete
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 650 V 650 V 650 V 650 V
Current - Collector (Ic) (Max) 40 A 30 A 80 A 80 A 120 A 40 A
Current - Collector Pulsed (Icm) 80 A 120 A 160 A 240 A 240 A 80 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A 2V @ 15V, 30A 2.3V @ 15V, 40A 2.3V @ 15V, 60A 2V @ 15V, 80A 2V @ 15V, 20A
Power - Max 168 W 260 W 283 W 375 W 469 W 168 W
Switching Energy 77µJ (on), 170µJ (off) 151µJ (on), 293µJ (off) 498mJ (on), 363mJ (off) 1.09mJ (on), 626µJ (off) 2.1mJ (on), 1.5mJ (off) 170µJ (off)
Input Type Standard Standard Standard Standard Standard Standard
Gate Charge 120 nC 149 nC 210 nC 306 nC 414 nC 120 nC
Td (on/off) @ 25°C 30ns/139ns 37ns/146ns 40ns/142ns 51ns/160ns 84ns/280ns -/139ns
Test Condition 400V, 20A, 10Ohm, 15V 400V, 30A, 10Ohm, 15V 400V, 40A, 5Ohm, 15V 400V, 60A, 5Ohm, 15V 400V, 80A, 10Ohm, 15V 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) - - - - - 140 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
Supplier Device Package TO-3P TO-3P TO-3P TO-3P TO-3P TO-3P

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