Overview
The STGW39NC60VD is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This device is designed using the advanced PowerMESH™ process, which offers an excellent balance between switching performance and low on-state behavior. It is packaged in a TO-247-3 through-hole package and is suitable for various high-frequency applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Collector-Emitter Voltage (VCE) | 600 | V |
Collector Current (continuous) at 25 °C | 80 | A |
Collector Current (continuous) at 100 °C | 40 | A |
Gate-Emitter Voltage (VGE) | ±20 | V |
Total Dissipation at TC = 25 °C | 250 | W |
Operating Junction Temperature | -55 to 150 | °C |
Thermal Resistance Junction-Case (IGBT) | 0.5 | °C/W |
Thermal Resistance Junction-Case (Diode) | 1.5 | °C/W |
Turn-on Switching Losses at 25 °C | 333 | µJ |
Turn-off Switching Losses at 25 °C | 537 | µJ |
Forward On-Voltage of Diode at 30 A | 1.8 | V |
Key Features
- Low CRES / CIES ratio, reducing susceptibility to cross conduction.
- Co-packaged with an ultra-fast free-wheeling diode.
- Excellent trade-off between switching performance and low on-state behavior due to the PowerMESH™ process.
- High-frequency switching capabilities.
- ECOPACK® package with lead-free second level interconnect, meeting environmental requirements.
Applications
- High frequency inverters.
- Uninterruptible Power Supplies (UPS).
- Motor drivers.
- Induction heating systems.
Q & A
- What is the maximum collector-emitter voltage of the STGW39NC60VD?
The maximum collector-emitter voltage (VCE) is 600 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 80 A at 25 °C and 40 A at 100 °C.
- What is the gate-emitter voltage range?
The gate-emitter voltage (VGE) range is ±20 V.
- What is the total dissipation at TC = 25 °C?
The total dissipation at TC = 25 °C is 250 W.
- What is the operating junction temperature range?
The operating junction temperature range is -55 to 150 °C.
- What are the thermal resistances for the IGBT and diode?
The thermal resistance junction-case for the IGBT is 0.5 °C/W, and for the diode, it is 1.5 °C/W.
- What are the typical turn-on and turn-off switching losses at 25 °C?
The typical turn-on switching losses are 333 µJ, and the turn-off switching losses are 537 µJ at 25 °C.
- What is the forward on-voltage of the diode at 30 A?
The forward on-voltage of the diode at 30 A is 1.8 V.
- What are some common applications of the STGW39NC60VD?
Common applications include high frequency inverters, UPS, motor drivers, and induction heating systems.
- What packaging does the STGW39NC60VD come in?
The STGW39NC60VD is packaged in a TO-247-3 through-hole package with ECOPACK® lead-free second level interconnect.