Overview
The IRF7240TRPBF is a P-Channel HEXFET® Power MOSFET produced by Infineon Technologies. This device is designed using advanced processing techniques to achieve extremely low on-resistance per silicon area, making it highly efficient for various power management applications. The MOSFET is packaged in a modified SO-8 package with enhanced thermal characteristics and multiple-die capability, ideal for applications requiring reduced board space.
Key Specifications
| Parameter | Min. | Typ. | Max. | Units | Conditions |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | - | - | -40 | V | - |
| ID (Continuous Drain Current) @ TA = 25°C, VGS = -10V | - | - | -10.5 | A | - |
| ID (Continuous Drain Current) @ TA = 70°C, VGS = -10V | - | - | -8.6 | A | - |
| IDM (Pulsed Drain Current) | - | - | -43 | A | Pulse width ≤ 400µs; duty cycle ≤ 0.50 |
| PD (Power Dissipation) @ TA = 25°C | - | - | 2.5 | W | - |
| PD (Power Dissipation) @ TA = 70°C | - | - | 1.6 | W | - |
| RDS(on) (Static Drain-to-Source On-Resistance) @ VGS = -10V, ID = -10.5A | - | - | 0.015 | Ω | - |
| VGS (Gate-to-Source Voltage) | - | - | ±20 | V | - |
| TJ, TSTG (Junction and Storage Temperature Range) | -55 | - | 150 | °C | - |
Key Features
- Ultra Low On-Resistance: Achieves extremely low on-resistance per silicon area, enhancing efficiency in power management applications.
- P-Channel MOSFET: Designed for use in battery and load management applications.
- Surface Mount Package: Available in SO-8 package with enhanced thermal characteristics and multiple-die capability.
- Lead-Free and RoHS Compliant: Suitable for modern electronic designs requiring environmental compliance.
- High Continuous Drain Current: Supports up to -10.5A at TA = 25°C and -8.6A at TA = 70°C.
- High Pulsed Drain Current: Capable of handling up to -43A in pulse mode.
Applications
- Battery Management: Ideal for battery charging and discharging circuits due to its low on-resistance and high current handling capabilities.
- Load Management: Suitable for load switching and power distribution in various electronic systems.
- Power Supplies: Can be used in DC-DC converters, power amplifiers, and other power supply applications.
- Automotive and Industrial Systems: Applicable in automotive and industrial power management systems where high efficiency and reliability are required.
Q & A
- What is the maximum drain-source voltage of the IRF7240TRPBF?
The maximum drain-source voltage (VDS) is -40V.
- What is the continuous drain current at TA = 25°C and VGS = -10V?
The continuous drain current (ID) is -10.5A at TA = 25°C and VGS = -10V.
- What is the static drain-to-source on-resistance at VGS = -10V and ID = -10.5A?
The static drain-to-source on-resistance (RDS(on)) is 0.015Ω at VGS = -10V and ID = -10.5A.
- What is the maximum gate-to-source voltage?
The maximum gate-to-source voltage (VGS) is ±20V.
- What is the junction and storage temperature range?
The junction and storage temperature range (TJ, TSTG) is -55°C to 150°C.
- Is the IRF7240TRPBF RoHS compliant?
Yes, the IRF7240TRPBF is RoHS compliant and lead-free.
- What package type is the IRF7240TRPBF available in?
The IRF7240TRPBF is available in the SO-8 package.
- What are some typical applications of the IRF7240TRPBF?
Typical applications include battery management, load management, power supplies, and automotive and industrial systems.
- What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is -43A.
- What is the power dissipation at TA = 25°C?
The power dissipation (PD) at TA = 25°C is 2.5W.
