BCP5316H6433XTMA1
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Infineon Technologies BCP5316H6433XTMA1

Manufacturer No:
BCP5316H6433XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 80V 1A SOT223-4
Delivery:
Payment:
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Product Introduction

Overview

The BCP5316H6433XTMA1 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This PNP transistor is part of the general-purpose transistor family and is designed for medium power applications. Although the specific part number BCP5316H6433XTMA1 is listed as discontinued, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

Parameter Symbol Value Unit
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage VCE -80 V
Collector Current IC 1 A
Base Current IB 50 mA
Power Dissipation Ptot 2 W
Transition Frequency fT 125 MHz
Package Type PG-SOT223-4-10

Key Features

  • PNP Transistor: Suitable for applications requiring PNP bipolar junction transistors.
  • Medium Power Handling: Capable of handling collector currents up to 1 A and power dissipation of 2 W.
  • High Transition Frequency: With a transition frequency of 125 MHz, it is suitable for high-frequency applications.
  • Surface Mount Package: Available in the PG-SOT223-4-10 package, which is convenient for surface mount technology (SMT) assembly.

Applications

  • General Purpose Amplification: Suitable for general-purpose amplification in various electronic circuits.
  • Switching Applications: Can be used in switching circuits due to its medium power handling and high transition frequency.
  • Audio and RF Circuits: Applicable in audio and RF circuits where PNP transistors are required.
  • Automotive and Industrial Systems: Can be used in automotive and industrial systems where reliability and medium power handling are necessary.

Q & A

  1. What is the collector current rating of the BCP5316H6433XTMA1 transistor?

    The collector current rating is 1 A.

  2. What is the maximum collector-emitter voltage for this transistor?

    The maximum collector-emitter voltage (VCE) is -80 V.

  3. What is the transition frequency of the BCP5316H6433XTMA1 transistor?

    The transition frequency (fT) is 125 MHz.

  4. In what package is the BCP5316H6433XTMA1 transistor available?

    The transistor is available in the PG-SOT223-4-10 surface mount package.

  5. Is the BCP5316H6433XTMA1 transistor still in production?

    No, the BCP5316H6433XTMA1 is listed as discontinued.

  6. What is the power dissipation rating of the BCP5316H6433XTMA1 transistor?

    The power dissipation rating is 2 W.

  7. Can the BCP5316H6433XTMA1 be used in high-frequency applications?
  8. What type of transistor is the BCP5316H6433XTMA1?

    The BCP5316H6433XTMA1 is a PNP bipolar junction transistor (BJT).

  9. Where can I find detailed specifications for the BCP5316H6433XTMA1 transistor?

    Detailed specifications can be found in the datasheet available on Infineon's official website and other electronic component distributors like Digi-Key and Mouser.

  10. What are some common applications for the BCP5316H6433XTMA1 transistor?

    Common applications include general-purpose amplification, switching circuits, audio and RF circuits, and automotive and industrial systems.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:125MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4-10
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Similar Products

Part Number BCP5316H6433XTMA1 BCP5416H6433XTMA1 BCP5116H6433XTMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs
Transistor Type PNP NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W
Frequency - Transition 125MHz 100MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4-10 PG-SOT223-4 PG-SOT223-4-10

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